2SC5509-T2-A RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The 2SC5509-T2-A is an RF transistor NPN manufactured by CEL, designed for high-frequency applications operating at 15GHz with a maximum collector-emitter breakdown voltage of 3.3V. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The device is packaged in SOT-343 surface mount configuration with a maximum power dissipation of 190mW and operates at junction temperatures up to 150°C.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	3.3	V
Frequency - Transition	15	GHz
Noise Figure (Typ @ f)	1.2 @ 2GHz	dB
Gain	14	dB
Power - Max	190	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 2V	—
Current - Collector (Ic) (Max)	100	mA
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	SC-82A, SOT-343	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the 2SC5509-T2-A is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor type: NPN configuration
Package type: SOT-343 surface mount (SC-82A)
Operating temperature range: 150°C maximum junction temperature
Voltage rating: Collector-emitter breakdown voltage of 3.3V or higher
Frequency capability: Transition frequency of 15GHz or higher
Power dissipation: Maximum power rating of 190mW or higher
Current handling: Collector current capability of 100mA or higher

Secondary Compatibility Factors:

Moisture sensitivity level: MSL 1 or equivalent
REACH compliance status
RoHS compliance status (for active alternatives)

Substitute parts are selected from active product lines with equivalent or superior electrical performance within the specified mechanical constraints. Parts with higher voltage ratings, frequency capabilities, or power dissipation ratings are acceptable substitutes provided they maintain SOT-343 package compatibility and do not introduce design complications through significantly different gain or noise characteristics.

Parameter Comparison

Parameter	2SC5509-T2-A (CEL)	BFP620H7764XTSA1 (Infineon)	BFP720H6327XTSA1 (Infineon)	BFP842ESDH6327XTSA1 (Infineon)	BFU630F,115 (NXP)
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	3.3V	2.8V	4.7V	3.7V	5.5V
Frequency - Transition	15GHz	65GHz	45GHz	60GHz	21GHz
Noise Figure (dB Typ @ f)	1.2 @ 2GHz	0.7~1.3 @ 1.8~6GHz	0.4~0.95 @ 150MHz~10GHz	0.65 @ 3.5GHz	0.75~1.3 @ 1.5~5.8GHz
Gain	14dB	21.5dB	10.5~28.5dB	26dB	13~22.5dB
Power - Max	190mW	185mW	100mW	120mW	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 2V	110 @ 50mA, 1.5V	160 @ 13mA, 3V	150 @ 15mA, 2.5V	90 @ 5mA, 2V
Current - Collector (Ic) (Max)	100mA	80mA	25mA	40mA	30mA
Operating Temperature (TJ)	150°C	150°C	150°C	150°C	150°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	SC-82A, SOT-343	SC-82A, SOT-343	SC-82A, SOT-343	SC-82A, SOT-343	SOT-343F
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

BFP620H7764XTSA1 (Infineon Technologies)

This substitute provides the closest electrical performance match with active product status and ROHS3 compliance. The voltage rating of 2.8V is marginally lower than the original 3.3V specification; however, the significantly higher transition frequency of 65GHz and improved noise figure characteristics (0.7–1.3dB across 1.8–6GHz) provide superior RF performance. The maximum collector current of 80mA is slightly reduced from 100mA but remains adequate for most applications. This part is available in high inventory (14,000 units) with Tape & Reel packaging.

BFP842ESDH6327XTSA1 (Infineon Technologies)

This substitute offers voltage and frequency specifications well-suited for direct replacement. The 3.7V collector-emitter breakdown voltage exceeds the original 3.3V rating, and the 60GHz transition frequency provides substantial performance margin. The noise figure of 0.65dB at 3.5GHz and gain of 26dB represent improvements over the original device. Maximum collector current is 40mA, which is lower than the original 100mA specification and may limit application scope. ROHS3 compliance and active product status are confirmed. Inventory availability is 9,551 units.

BFU630F,115 (NXP USA Inc.)

This substitute maintains compatibility with the original voltage specification through its 5.5V collector-emitter breakdown rating and provides adequate frequency coverage at 21GHz. The maximum power dissipation of 200mW exceeds the original 190mW rating. The maximum collector current of 30mA is significantly reduced compared to the original 100mA specification. This part is suitable for lower-current RF applications and is available in high inventory (17,779 units) with ROHS3 compliance and active product status.

BFP720H6327XTSA1 (Infineon Technologies)

This substitute provides the highest voltage rating at 4.7V and the highest transition frequency at 45GHz among available options. However, the maximum collector current of 25mA represents a substantial reduction from the original 100mA specification, limiting its applicability to low-current RF circuits. The power dissipation rating of 100mW is also significantly lower than the original 190mW. ROHS3 compliance and active product status are confirmed. Inventory availability is 3,115 units.

Frequently Asked Questions (FAQ)

Q: Can the BFP620H7764XTSA1 be used as a direct replacement for the 2SC5509-T2-A?

A: The BFP620H7764XTSA1 is electrically compatible for most RF applications. Both devices share the SOT-343 package configuration and operate at 150°C maximum junction temperature. The primary consideration is the voltage rating: the BFP620H operates at 2.8V maximum collector-emitter breakdown voltage compared to the original 3.3V specification. In applications where the supply voltage is 2.8V or lower, this substitute is suitable. The superior frequency response (65GHz vs. 15GHz) and improved noise characteristics make this an acceptable upgrade for higher-frequency applications.

Q: Why do some substitute parts have lower maximum collector current ratings?

A: The substitute parts listed represent different design optimizations within the RF transistor family. Parts such as the BFP720H6327XTSA1 and BFP842ESDH6327XTSA1 are optimized for higher-frequency operation and lower-current applications, resulting in reduced maximum collector current specifications. Selection of a substitute part must account for the specific current requirements of the target application. If the application requires 100mA collector current, the BFP620H7764XTSA1 with 80mA maximum rating is the closest available option.

Q: Are all substitute parts available in the same package configuration?

A: All listed substitute parts are available in SOT-343 surface mount packages, ensuring mechanical compatibility with the original 2SC5509-T2-A. The BFU630F,115 is specified as SOT-343F, which maintains the same footprint and pin configuration. Packaging formats differ (Tape & Reel, Cut Tape & Digi-Reel), but these variations affect procurement and handling only, not electrical or mechanical compatibility.

Q: What is the significance of the ROHS3 compliance status?

A: All active substitute parts listed carry ROHS3 compliance certification, indicating conformance to the Restriction of Hazardous Substances Directive. This compliance is relevant for applications subject to environmental regulations in the European Union and other jurisdictions adopting equivalent standards. The original 2SC5509-T2-A, being an obsolete part, does not have documented ROHS3 status. Selection of ROHS3-compliant substitutes ensures regulatory compliance for new designs and procurement.

Q: How does the noise figure comparison affect substitute selection?

A: The noise figure specification indicates the amount of noise added by the transistor to the RF signal. Lower noise figure values represent superior performance. The original 2SC5509-T2-A specifies 1.2dB at 2GHz. All listed substitutes provide equal or superior noise performance: BFP620H at 0.7–1.3dB, BFP720H at 0.4–0.95dB, BFP842E at 0.65dB, and BFU630F at 0.75–1.3dB. For noise-sensitive applications, the BFP720H6327XTSA1 with a minimum noise figure of 0.4dB provides the best performance.

Q: Can the BFR843EL3E6327XTSA1 be used as a substitute?

A: The BFR843EL3E6327XTSA1 is not recommended as a direct substitute. This part uses a different package configuration (3-XFDFN / PG-TSLP-3-10) rather than the SOT-343 package of the original device. Additionally, the transition frequency specification is not provided for this part, and the maximum collector current of 55mA is lower than the original 100mA requirement. While the power dissipation of 125mW and voltage rating of 2.6V are within acceptable ranges, the package incompatibility and missing frequency specification make this part unsuitable for direct replacement.

Q: What is the REACH compliance status of the substitute parts?

A: All listed substitute parts, including the original 2SC5509-T2-A, carry REACH Unaffected status. This designation indicates that the substances of concern regulated under the Registration, Evaluation, Authorization and Restriction of Chemicals (REACH) regulation are not present in these components at levels requiring special handling or documentation. This status applies uniformly across all parts in this comparison and does not differentiate substitute selection.

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