2SC5459(TOJS,Q,M) Equivalent & Substitute Parts

Part Overview

The 2SC5459(TOJS,Q,M) is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, designed for high-voltage switching and amplification applications. This device features a 400 V collector-emitter breakdown voltage rating with a maximum collector current of 3 A and 2 W power dissipation capability in a TO-220-3 through-hole package.

The 2SC5459(TOJS,Q,M) is classified as an obsolete product. Identification of equivalent and substitute parts is necessary to support ongoing maintenance, repair, and production requirements for legacy systems and equipment utilizing this component.

Substiute Parts

2SC5459(TOJS,Q,M)
Toshiba Semiconductor and StorageIn Stock: 11242SC5459(TOJS,Q,M) Datasheet
2SC5459(TOJS,Q,M)
Current Part
2SC5354,TOJSQ(O
Toshiba Semiconductor and StorageIn Stock: 8132SC5354,TOJSQ(O Datasheet
2SC5354,TOJSQ(O
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 400 V
Current - Collector (Ic) (Max) 3 A
Power - Max 2 W
Vce Saturation (Max) @ Ib, Ic 1 V @ 150 mA, 1.2 A
Current - Collector Cutoff (Max) 100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 300 mA, 5 V
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-220-3
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 2SC5459(TOJS,Q,M) is determined by alignment of the following critical electrical and mechanical parameters:

  • Transistor Type: NPN polarity must be maintained
  • Voltage Rating: Collector-emitter breakdown voltage must meet or exceed 400 V
  • Current Rating: Maximum collector current must support 3 A operation
  • Power Dissipation: Maximum power rating must accommodate 2 W
  • Saturation Characteristics: Vce saturation performance at specified bias conditions
  • Current Gain: DC current gain (hFE) must meet minimum specifications
  • Package Type: Through-hole mounting in TO-220 or equivalent form factor
  • Compliance Status: RoHS compliance and regulatory certifications (ECCN, HTSUS)

The 2SC5354,TOJSQ(O) is identified as a substitute part manufactured by Toshiba Semiconductor and Storage. This part maintains NPN transistor topology and is classified as an active product with RoHS compliance certification.

Parameter Comparison

Parameter 2SC5459(TOJS,Q,M) 2SC5354,TOJSQ(O)
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Category Transistors, Bipolar (BJT) Transistors, Bipolar (BJT)
Transistor Type NPN NPN
Product Status Obsolete Active
ECCN EAR99 EAR99
HTSUS 8541.29.0095 8541.29.0095
RoHS Status Not Specified RoHS Compliant

Engineering Selection Recommendations

The 2SC5354,TOJSQ(O) is available as an active product with current manufacturing status and RoHS compliance certification. This part shares common regulatory classification (ECCN EAR99, HTSUS 8541.29.0095) with the 2SC5459(TOJS,Q,M) and maintains identical NPN transistor topology.

Selection of the 2SC5354,TOJSQ(O) as a substitute is supported by:

  • Active product status ensuring ongoing availability and supply chain continuity
  • RoHS compliance certification meeting modern environmental and regulatory requirements
  • Common manufacturer (Toshiba Semiconductor and Storage) ensuring design consistency
  • Identical regulatory classification codes
  • Shared bipolar junction transistor category and NPN configuration

The transition from the obsolete 2SC5459(TOJS,Q,M) to the active 2SC5354,TOJSQ(O) supports long-term component sourcing and regulatory compliance for legacy system support.

Frequently Asked Questions (FAQ)

Q: Why is the 2SC5459(TOJS,Q,M) classified as obsolete?

A: The 2SC5459(TOJS,Q,M) is no longer in active production. The 2SC5354,TOJSQ(O) represents the current active equivalent from the same manufacturer.

Q: What are the critical parameters for substitution of NPN transistors in this voltage and current class?

A: Substitution requires matching or exceeding the collector-emitter breakdown voltage (400 V), maximum collector current (3 A), power dissipation (2 W), and saturation characteristics. The transistor type (NPN) and package form factor (through-hole TO-220) must remain consistent.

Q: Does the 2SC5354,TOJSQ(O) meet the same regulatory requirements as the 2SC5459(TOJS,Q,M)?

A: Both parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. The 2SC5354,TOJSQ(O) carries RoHS compliance certification, which exceeds the regulatory status of the obsolete part.

Q: Are there package compatibility considerations between these parts?

A: The 2SC5459(TOJS,Q,M) uses a TO-220-3 through-hole package. Verification of the 2SC5354,TOJSQ(O) package configuration is required to confirm mechanical and thermal interface compatibility in the target application.

Q: What is the inventory status of these parts?

A: The 2SC5459(TOJS,Q,M) has 1050 pieces in stock as new original inventory. The 2SC5354,TOJSQ(O) has 746 pieces in stock as new original inventory.

Q: Can the 2SC5354,TOJSQ(O) be used in all applications where the 2SC5459(TOJS,Q,M) was specified?

A: Substitution is valid where the electrical parameters (voltage, current, power, and gain characteristics) of the 2SC5354,TOJSQ(O) meet or exceed the design requirements of the original application. Package and thermal interface compatibility must be confirmed for the specific mounting configuration.

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