2SC5439(F) Equivalent & Substitute Parts

Part Overview

The 2SC5439(F) is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, rated for 450 V collector-emitter breakdown voltage and 8 A maximum collector current in a TO-220-3 through-hole package. This component is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. The 2SC5439(F) delivers 2 W maximum power dissipation and operates at junction temperatures up to 150°C, serving applications requiring moderate-power switching and amplification in high-voltage circuits.

Substiute Parts

2SC5439(F)

Toshiba Semiconductor and StorageIn Stock: 10552SC5439(F) Datasheet

Current PartRFQ

MJF18008G

onsemiIn Stock: 1345MJF18008G Datasheet

DirectRFQ

MJF18004G

onsemiIn Stock: 2190MJF18004G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the 2SC5439(F) is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Transistor type: NPN configuration
• Voltage rating: 450 V collector-emitter breakdown minimum
• Current rating: 8 A maximum collector current minimum
• DC current gain: 14 minimum at specified test conditions
• Collector cutoff current: 100 µA maximum
• Package type: TO-220-3 through-hole configuration
• Mounting: Through-hole compatible

Substitute Classification:

Direct Equivalent (MJF18008G): Meets or exceeds all primary electrical parameters. Identical voltage and current ratings (450 V, 8 A). Maintains DC current gain specification (14 @ 1A, 5V). Collector cutoff current specification identical (100 µA). TO-220-3 package compatibility confirmed. Active product status with RoHS3 compliance and REACH unaffected designation.

Similar Substitute (MJF18004G): Meets voltage rating (450 V) and maintains DC current gain specification (14 @ 300mA, 5V). Current rating reduced to 5 A maximum, representing a lower current capability. Collector cutoff current specification identical (100 µA). TO-220-3 package compatibility confirmed. Active product status with RoHS3 compliance and REACH unaffected designation. Suitable for applications not requiring full 8 A collector current.

Parameter Comparison

Engineering Selection Recommendations

MJF18008G Selection Rationale:

The MJF18008G represents the direct equivalent substitute for the 2SC5439(F). This onsemi SWITCHMODE™ series transistor maintains identical electrical specifications across all critical parameters: 450 V breakdown voltage, 8 A maximum collector current, and 14 minimum DC current gain. The component is classified as active product status, ensuring long-term availability and supply chain continuity. RoHS3 compliance and REACH unaffected designation confirm regulatory alignment with current environmental standards. The enhanced power rating (45 W versus 2 W) and extended operating temperature range (-65°C to 150°C) provide additional design margin without compromising compatibility. TO-220-3 package configuration ensures direct mechanical and electrical interchangeability.

MJF18004G Selection Rationale:

The MJF18004G serves as a suitable alternative when circuit requirements do not demand the full 8 A collector current capability. This onsemi SWITCHMODE™ series transistor maintains the 450 V voltage rating and 14 minimum DC current gain specification, with maximum collector current limited to 5 A. Active product status, RoHS3 compliance, and REACH unaffected designation provide equivalent regulatory and supply chain benefits. The 35 W power rating and extended temperature range support robust circuit operation. Selection of MJF18004G is appropriate for applications with collector current requirements not exceeding 5 A, offering cost optimization without electrical parameter compromise within the reduced current envelope.

Frequently Asked Questions (FAQ)

Q: Can MJF18008G directly replace 2SC5439(F) in existing circuit designs?

A: Yes. The MJF18008G maintains identical electrical specifications for voltage rating (450 V), maximum collector current (8 A), and DC current gain (14 @ 1A, 5V). TO-220-3 package configuration provides direct mechanical compatibility. No circuit modifications are required for electrical substitution.

Q: What is the primary difference between MJF18008G and MJF18004G?

A: The maximum collector current rating differs: MJF18008G supports 8 A, while MJF18004G supports 5 A. Both maintain the 450 V voltage rating and 14 minimum DC current gain. Selection depends on circuit current requirements. MJF18004G is suitable only for applications not exceeding 5 A collector current.

Q: Why is the 2SC5439(F) classified as obsolete?

A: The 2SC5439(F) is listed as obsolete by Toshiba Semiconductor and Storage. Active equivalent products from onsemi (MJF18008G and MJF18004G) provide continued availability and regulatory compliance for new designs and production continuity.

Q: Are the substitute parts RoHS compliant?

A: Yes. Both MJF18008G and MJF18004G are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. The 2SC5439(F) RoHS status is not specified in available documentation.

Q: Do the substitute transistors require different thermal management?

A: The substitute transistors feature higher maximum power ratings (45 W for MJF18008G, 35 W for MJF18004G) compared to the 2SC5439(F) (2 W). This enhanced power capability may reduce thermal management requirements in equivalent applications. Thermal design should be verified based on specific circuit operating conditions and power dissipation calculations.

Q: Can MJF18004G be used in applications originally designed for 2SC5439(F)?

A: MJF18004G is suitable only for applications where maximum collector current does not exceed 5 A. If the circuit requires the full 8 A capability of the 2SC5439(F), MJF18004G is not appropriate. Verify circuit current requirements before selection.

Q: What is the operating temperature range for substitute parts?

A: MJF18008G and MJF18004G both operate from -65°C to 150°C junction temperature, compared to the 2SC5439(F) maximum of 150°C. The extended lower temperature range provides additional design flexibility for applications requiring operation below 0°C.

Q: Are the TO-220-3 packages identical between all three transistors?

A: Yes. All three transistors use TO-220-3 full pack configuration for through-hole mounting. Pin configuration and mechanical dimensions are compatible, enabling direct board-level substitution without layout modifications.