2SC5374A-TL-E RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The 2SC5374A-TL-E is an RF transistor NPN manufactured by onsemi, designed for RF applications operating at 5.2GHz with a maximum power dissipation of 100mW. This component features a 10V collector-emitter breakdown voltage and is housed in a surface mount SC-75 (SOT-416) SMCP package. The product is currently classified as obsolete, making identification of equivalent and substitute parts essential for design continuity, legacy system maintenance, and component sourcing in applications where this transistor was originally specified.

Substiute Parts

2SC5374A-TL-E

onsemiIn Stock: 38702SC5374A-TL-E Datasheet

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55GN01FA-TL-H

onsemiIn Stock: 859855GN01FA-TL-H Datasheet

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BFP450H6433XTMA1

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BFP620H7764XTSA1

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BFP650FH6327XTSA1

Infineon TechnologiesIn Stock: 18699BFP650FH6327XTSA1 Datasheet

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BFR843EL3E6327XTSA1

Infineon TechnologiesIn Stock: 16107BFR843EL3E6327XTSA1 Datasheet

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BFS 17P E6433

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MRF317

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SC5374A-TL-E is determined by compatibility across the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Transistor Type: NPN (mandatory match)
• Voltage - Collector Emitter Breakdown (Max): 10V or greater
• Frequency - Transition: 5.2GHz or greater
• Power - Max: 100mW or greater
• Current - Collector (Ic) (Max): 100mA or greater
• Operating Temperature: 150°C (TJ) or greater
• Mounting Type: Surface Mount

Secondary Compatibility Factors:

• DC Current Gain (hFE): Minimum 110 at specified conditions or equivalent performance
• Noise Figure and Gain characteristics within acceptable RF application parameters
• Package compatibility or functional equivalence in circuit layout

The substitute parts listed below meet or exceed the electrical specifications of the 2SC5374A-TL-E while maintaining NPN transistor topology and surface mount configuration. Substitutes are grouped by their ability to fulfill the original part's RF performance requirements at 5.2GHz operation.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: 55GN01FA-TL-H (onsemi)

The 55GN01FA-TL-H is the closest functional equivalent to the 2SC5374A-TL-E. Both parts are manufactured by onsemi and share identical 10V collector-emitter breakdown voltage specifications. The 55GN01FA-TL-H operates across a frequency range of 4.5GHz to 5.5GHz, directly encompassing the 5.2GHz operating point of the original part. Power dissipation capability is increased to 250mW, providing design margin. The part is currently in active production status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. Maximum collector current of 70mA is slightly reduced compared to the original 100mA specification; circuit design verification is required for applications demanding the full 100mA current capability.

Secondary Substitutes: BFP620H7764XTSA1 and BFP650FH6327XTSA1 (Infineon Technologies)

Both Infineon parts exceed the RF performance requirements of the 2SC5374A-TL-E, operating at significantly higher frequencies (65GHz and 42GHz respectively). These parts are suitable for applications where the original 5.2GHz specification represents a minimum requirement rather than a design constraint. BFP620H7764XTSA1 features superior noise figure performance (0.7dB to 1.3dB) and higher gain (21.5dB), making it advantageous for low-noise RF applications. BFP650FH6327XTSA1 provides the highest power dissipation (500mW) and maximum collector current (150mA) among the substitutes, supporting higher-power RF designs. Both parts are ROHS3 compliant and in active production. Package differences (SOT-343 and 4-TSFP respectively) require PCB layout modification.

Alternative Substitute: BFP450H6433XTMA1 (Infineon Technologies)

The BFP450H6433XTMA1 operates at 24GHz with 450mW power dissipation and 100mA maximum collector current, matching the current capability of the original part. This substitute is appropriate for applications where higher frequency operation is beneficial. Collector-emitter breakdown voltage is reduced to 5V, requiring verification that circuit bias conditions remain within specification. ROHS3 compliance and active production status support long-term component availability.

Not Recommended: MRF317 (MACOM Technology Solutions)

The MRF317 is a high-power RF transistor (100W) in a chassis mount package (316-01), fundamentally different in form factor and application class from the 2SC5374A-TL-E surface mount design. While electrically capable of RF amplification, the MRF317 is unsuitable for direct substitution in circuits designed for the compact SMCP surface mount package. This part is listed as a substitute reference only for applications requiring complete redesign to accommodate higher power levels and different mounting methodology.

Frequently Asked Questions (FAQ)

Q: Can the 55GN01FA-TL-H directly replace the 2SC5374A-TL-E in existing PCB designs?

A: The 55GN01FA-TL-H is electrically compatible with the 2SC5374A-TL-E for RF applications at 5.2GHz. However, package differences exist: the original part uses SC-75 (SOT-416) while the substitute uses SC-81. Physical footprint verification is required before PCB implementation. If the PCB footprint accommodates SC-81 dimensions, direct substitution is feasible. Otherwise, PCB modification or adapter solutions are necessary.

Q: What is the significance of the frequency range specification "4.5GHz ~ 5.5GHz" for the 55GN01FA-TL-H?

A: This specification indicates the transistor's transition frequency range across its operating envelope. The 2SC5374A-TL-E operates at a fixed 5.2GHz, which falls within the 55GN01FA-TL-H range. The substitute part maintains RF performance characteristics across this broader frequency band, ensuring stable operation at the original design frequency.

Q: Why do some substitute parts have lower collector-emitter breakdown voltages than the original 2SC5374A-TL-E?

A: The BFP620H7764XTSA1 (2.8V) and BFP450H6433XTMA1 (5V) feature reduced breakdown voltages compared to the original 10V specification. These parts are suitable only for applications where circuit bias conditions maintain collector-emitter voltage below their respective breakdown limits. Circuit analysis is mandatory before selecting these substitutes. The 55GN01FA-TL-H and BFP650FH6327XTSA1 maintain or exceed the original 10V specification and are preferred for voltage-critical applications.

Q: How does the reduced maximum collector current of the 55GN01FA-TL-H (70mA vs. 100mA) affect substitution suitability?

A: The 55GN01FA-TL-H maximum collector current of 70mA is lower than the original part's 100mA specification. Applications operating at or near 100mA collector current require verification that the substitute part's 70mA limit does not compromise circuit performance or cause thermal stress. For applications operating below 70mA, this difference is not significant. BFP450H6433XTMA1 and BFP650FH6327XTSA1 offer higher current capabilities (100mA and 150mA respectively) for current-intensive designs.

Q: What does "ROHS3 Compliant" mean for component substitution?

A: ROHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates the component meets European environmental and safety regulations regarding restricted substances. All active substitute parts listed are ROHS3 compliant, ensuring regulatory alignment with modern manufacturing and procurement standards. The original 2SC5374A-TL-E, being obsolete, does not carry this certification. Substitution with ROHS3-compliant parts supports compliance with current environmental regulations.

Q: Can the BFP620H7764XTSA1 or BFP650FH6327XTSA1 be used in applications originally designed for 5.2GHz operation?

A: Yes. Both parts operate at frequencies significantly higher than 5.2GHz (65GHz and 42GHz respectively), making them suitable for applications where the original 5.2GHz specification represents a minimum frequency requirement. These substitutes provide superior RF performance characteristics including lower noise figures and higher gains. However, PCB layout modifications are required due to package differences (SOT-343 and 4-TSFP respectively). Circuit performance verification is recommended to ensure the higher-frequency characteristics do not introduce unintended effects in the application.

Q: Is the MRF317 a practical substitute for the 2SC5374A-TL-E?

A: The MRF317 is not a practical direct substitute. While both are NPN RF transistors, the MRF317 is a high-power device (100W) in a chassis mount package (316-01), whereas the 2SC5374A-TL-E is a low-power surface mount device (100mW, SMCP). The MRF317 is listed as a substitute reference only for applications requiring complete circuit redesign to accommodate higher power levels and different mounting methodology. For standard 5.2GHz RF applications requiring surface mount components, the 55GN01FA-TL-H is the appropriate choice.

Q: What compliance certifications should be verified when selecting a substitute part?

A: Verify ROHS3 compliance status, REACH compliance status, and ECCN (Export Control Classification Number) alignment with the original part. All listed active substitutes carry ROHS3 compliance and REACH Unaffected status, matching or exceeding the regulatory profile of the original 2SC5374A-TL-E. ECCN classification (EAR99) is consistent across all substitutes, supporting equivalent export and procurement compliance.