2SC5343-L-AP Equivalent & Substitute Parts

Part Overview

The 2SC5343-L-AP is a Bipolar (BJT) NPN transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. This component operates at a maximum collector voltage of 50 V with a collector current rating of 150 mA and a maximum power dissipation of 625 mW. The device is packaged in a Through Hole TO-92 configuration with formed leads.

The 2SC5343-L-AP is classified as an obsolete product. Identification of equivalent substitute parts is necessary to support ongoing maintenance, repair, and redesign activities for legacy systems and applications utilizing this transistor.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) (Max)	150	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Vce Saturation (Max) @ Ib, Ic	250 mV @ 10 mA, 100 mA	—
Current - Collector Cutoff (Max)	100	nA
Power - Max	625	mW
Frequency - Transition	80	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-92-3 (TO-226AA)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2SC5343-L-AP is determined by equivalence across the following critical electrical and mechanical parameters:

Electrical Parameters:

Transistor Type: NPN configuration
Maximum Collector Current (Ic): 150 mA
Maximum Collector-Emitter Breakdown Voltage (VCEO): 50 V
Saturation Voltage (Vce Sat): 250 mV @ specified base and collector currents
Collector Cutoff Current (ICBO): 100 nA maximum
Transition Frequency: 80 MHz
Maximum Power Dissipation: 625 mW or greater

Mechanical Parameters:

Mounting Type: Through Hole
Package Configuration: TO-92-3 (TO-226AA) with formed leads

Compliance Parameters:

RoHS3 Compliance required

The KSC1815YTA meets all specified electrical parameters and mechanical requirements. This substitute maintains functional equivalence for applications requiring NPN transistor operation within the defined voltage, current, and frequency specifications.

Parameter Comparison

Parameter	2SC5343-L-AP	KSC1815YTA	Match Status
Transistor Type	NPN	NPN	Equivalent
Current - Collector (Ic) (Max)	150 mA	150 mA	Equivalent
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	Equivalent
Vce Saturation (Max) @ Ib, Ic	250 mV @ 10 mA, 100 mA	250 mV @ 10 mA, 100 mA	Equivalent
Current - Collector Cutoff (Max)	100 nA	100 nA	Equivalent
Frequency - Transition	80 MHz	80 MHz	Equivalent
Operating Temperature (TJ)	150 °C	150 °C	Equivalent
Mounting Type	Through Hole	Through Hole	Equivalent
Package / Case	TO-92-3 (TO-226AA)	TO-92-3 (TO-226AA)	Equivalent
Power - Max	625 mW	400 mW	Substitute rated lower
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Equivalent

Engineering Selection Recommendations

The KSC1815YTA is an active product manufactured by onsemi and serves as a functional equivalent to the obsolete 2SC5343-L-AP. Both devices share identical electrical specifications for collector current, breakdown voltage, saturation voltage, cutoff current, and transition frequency. Both are packaged in the TO-92-3 configuration with formed leads, enabling direct mechanical substitution in Through Hole applications.

The KSC1815YTA carries ROHS3 compliance certification, matching the regulatory status of the original part. The substitute maintains the same operating temperature range of 150 °C (TJ).

The primary difference between the two devices is maximum power dissipation: the KSC1815YTA is rated at 400 mW compared to the 2SC5343-L-AP at 625 mW. This difference must be evaluated within the context of the specific application's thermal and power requirements.

The active product status of the KSC1815YTA ensures ongoing availability and supply chain continuity for new designs and legacy system support.

Frequently Asked Questions (FAQ)

Q: Can the KSC1815YTA be used as a direct replacement for the 2SC5343-L-AP in existing circuit designs?

A: The KSC1815YTA is electrically equivalent across all critical parameters: collector current (150 mA), breakdown voltage (50 V), saturation voltage (250 mV), cutoff current (100 nA), and transition frequency (80 MHz). Both devices use the TO-92-3 package with formed leads, enabling direct mechanical substitution. The lower power rating (400 mW vs. 625 mW) must be verified against application thermal requirements.

Q: What is the significance of the power dissipation difference between these two transistors?

A: The 2SC5343-L-AP is rated for 625 mW maximum power dissipation, while the KSC1815YTA is rated for 400 mW. Applications operating near the upper thermal limits of the original design may require thermal analysis to confirm the substitute's suitability. Applications with lower power dissipation requirements will not be affected by this difference.

Q: Are both transistors RoHS compliant?

A: Yes. Both the 2SC5343-L-AP and KSC1815YTA are ROHS3 compliant, meeting current environmental and regulatory requirements.

Q: What is the difference between the TO-92 and TO-92-3 package designations?

A: TO-92-3 is the formal designation for the three-lead TO-92 package with formed leads (TO-226AA). Both the original and substitute parts use this same package configuration, ensuring mechanical compatibility in Through Hole applications.

Q: Why is the 2SC5343-L-AP classified as obsolete?

A: The 2SC5343-L-AP is no longer in active production. The KSC1815YTA, manufactured by onsemi, is an active product with equivalent electrical and mechanical specifications, providing continuity for applications requiring this transistor type.

Q: Are there any differences in DC current gain (hFE) between these transistors?

A: The specifications provided indicate different hFE measurement conditions. The 2SC5343-L-AP specifies hFE minimum of 300 @ 2A, 6V, while the KSC1815YTA specifies hFE minimum of 70 @ 2mA, 6V. These measurements are taken at different collector current levels and are not directly comparable. Application-specific circuit analysis is required to determine the impact of hFE variations on circuit performance.

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