Equivalent & Substitute Parts for 2SC5287 Bipolar (BJT) Transistor

Part Overview

The 2SC5287 is an NPN Bipolar Junction Transistor (BJT) categorized under Transistors, Bipolar (BJT), designed for high-voltage power applications. It offers a maximum collector-emitter breakdown voltage of 550 V, collector current of up to 5 A, and a maximum power dissipation of 80 W, housed in a TO-3P through-hole package. The part status is Obsolete, necessitating identification of alternative models for ongoing production, repair, or inventory replenishment. Compatibility of electrical, mechanical, and compliance parameters is essential when selecting substitutive transistor models.

Key Parameters

Parameter	2SC5287
Transistor Type	NPN
Current - Collector (Ic) (Max)	5 A
Voltage - Collector Emitter Breakdown (Max)	550 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 360mA, 1.8A
Current - Collector Cutoff (Max)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 1.8A, 4V
Power - Max	80 W
Frequency - Transition	6MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitute grouping is determined strictly by the following key parameters as provided in the input: transistor type, maximum collector current, maximum collector-emitter breakdown voltage, maximum power dissipation, operating temperature, mounting type, package/case, RoHS compliance, moisture sensitivity level, ECCN, and HTSUS classification. Only substitute components that match or exceed the required electrical and mechanical specifications within these parameters are considered relevant for direct replacement.

Parameter Comparison

Parameter	2SC5287	BUF420AW
Transistor Type	NPN	NPN
Current - Collector (Ic) (Max)	5 A	30 A
Voltage - Collector Emitter Breakdown (Max)	550 V	450 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 360mA, 1.8A	500mV @ 4A, 20A
Power - Max	80 W	200 W
Operating Temperature	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-3P-3, SC-65-3	TO-247-3
Supplier Device Package	TO-3P	TO-247-3
RoHS Status	RoHS Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
ECCN	EAR99	EAR99
HTSUS	8541.29.0095	8541.29.0095
Product Status	Obsolete	Active

Engineering Selection Recommendations

The 2SC5287 Bipolar (BJT) Transistor is classified as obsolete, requiring substitution for ongoing applications. The substitute part BUF420AW from STMicroelectronics is active and matches the RoHS and moisture sensitivity (MSL 1) compliance requirements, as well as the ECCN and HTSUS classifications. Only product status, compliance, and certifications provided within the input have been considered for suitability.

Frequently Asked Questions (FAQ)

Q1: What are the main criteria for substituting the 2SC5287 transistor?
Substitution is based strictly on transistor type, electrical ratings (maximum collector current, voltage, and power), mounting style, package, compliance (RoHS, MSL), and regulatory classifications (ECCN, HTSUS).

Q2: Is package compatibility necessary for substitution?
Substitute parts must match or be compatible in mounting and package form factors as specified (through-hole type, TO-3P/TO-247-3 cases).

Q3: Are only RoHS-compliant substitutes permitted?
Only substitutes explicitly listed as RoHS Compliant within the provided data are considered.

Q4: Does obsolete status affect substitutability?
Yes, substitution is necessary when the main part number is obsolete as indicated in the product status.

Q5: Are there differences in device certifications to consider?
Selection considers the provided RoHS compliance, MSL status, ECCN, and HTSUS parameters; no additional certifications have been evaluated.

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