2SC5245A-4-TL-E Equivalent & Substitute Parts

Part Overview

The 2SC5245A-4-TL-E is an RF transistor NPN manufactured by onsemi, rated for 10V collector-emitter breakdown voltage with an 8GHz transition frequency and 150mW maximum power dissipation. This device is packaged in SC-70 / SOT-323 surface mount configuration and is classified as obsolete. Due to its obsolete product status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and system maintenance applications.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	10	V
Frequency - Transition	8	GHz
Power - Max	150	mW
Current - Collector (Ic) (Max)	30	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 10mA, 5V	—
Mounting Type	Surface Mount	—
Package / Case	SC-70, SOT-323	—
Operating Temperature (TJ)	150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2SC5245A-4-TL-E is determined by alignment of the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V or greater
Frequency - Transition: 7GHz or greater
Power - Max: 150mW or greater
Current - Collector (Ic) (Max): 30mA or greater
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323 or compatible surface mount packages
Operating Temperature: 150°C or greater
RoHS Status: ROHS3 Compliant

Substitute parts are grouped into two categories: Manufacturer Recommended substitutes that maintain closest electrical and mechanical compatibility, and Similar substitutes that meet core functional requirements with variations in specific parameters.

Parameter Comparison

Parameter	2SC5245A-4-TL-E	2SC5226A-4-TL-E	2SC5065-Y(TE85L,F)	BFP405H6740XTSA1	BFP640FESDH6327XTSA1	BFR360L3E6765XTMA1	MRF422
Manufacturer	onsemi	onsemi	Toshiba Semiconductor and Storage	Infineon Technologies	Infineon Technologies	Infineon Technologies	MACOM Technology Solutions
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	10V	10V	12V	5V	4.7V	9V	35V
Frequency - Transition	8GHz	7GHz	7GHz	25GHz	46GHz	14GHz	—
Power - Max	150mW	150mW	100mW	75mW	200mW	210mW	150W
Current - Collector (Ic) (Max)	30mA	70mA	30mA	25mA	50mA	35mA	20A
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 10mA, 5V	90 @ 20mA, 5V	120 @ 10mA, 5V	60 @ 5mA, 4V	110 @ 30mA, 3V	90 @ 15mA, 3V	15 @ 5A, 5V
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Chassis Mount
Package / Case	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323	SC-82A, SOT-343	4-SMD, Flat Leads	SC-101, SOT-883	211-11, Style 2
Operating Temperature (TJ)	150°C	150°C	125°C	150°C	150°C	150°C	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Manufacturer Recommended Substitute: 2SC5226A-4-TL-E

The 2SC5226A-4-TL-E is the primary recommended substitute for the obsolete 2SC5245A-4-TL-E. This part maintains identical voltage rating (10V), matching power dissipation (150mW), and compatible surface mount packaging (SC-70 / SOT-323). The 2SC5226A-4-TL-E operates at 7GHz transition frequency compared to the original 8GHz, with increased maximum collector current (70mA versus 30mA) and higher DC current gain (12dB versus 10dB). The part is manufactured by onsemi with active product status, ROHS3 compliance, and unlimited moisture sensitivity level. This substitute provides direct functional replacement with enhanced current handling capability.

Similar Substitutes for Extended Frequency Applications:

The BFR360L3E6765XTMA1 (Infineon Technologies) operates at 14GHz transition frequency with 9V voltage rating and 210mW power dissipation. This part accommodates higher frequency applications while maintaining surface mount configuration and ROHS3 compliance. The package differs (SC-101, SOT-883) and requires PCB layout modification.

The BFP640FESDH6327XTSA1 (Infineon Technologies) provides 46GHz transition frequency with 200mW power dissipation and 4.7V voltage rating. This part is suitable for ultra-high frequency applications but operates at reduced voltage and uses a different surface mount package (4-TSFP).

The 2SC5065-Y(TE85L,F) (Toshiba Semiconductor and Storage) maintains 7GHz transition frequency with 12V voltage rating and SC-70 packaging. Operating temperature is limited to 125°C compared to the original 150°C, and maximum power dissipation is reduced to 100mW.

Not Recommended for Direct Substitution:

The MRF422 (MACOM Technology Solutions) is a chassis mount device rated for 35V and 150W power dissipation with 20A collector current. This part is fundamentally incompatible due to different mounting type (chassis mount versus surface mount) and package configuration (211-11, Style 2).

Frequently Asked Questions (FAQ)

Q: Can the 2SC5226A-4-TL-E directly replace the 2SC5245A-4-TL-E in existing designs?

A: The 2SC5226A-4-TL-E is compatible for direct substitution in applications where the 7GHz transition frequency meets system requirements. Both parts share identical voltage rating (10V), power dissipation (150mW), and surface mount packaging (SC-70 / SOT-323). The increased maximum collector current (70mA) and higher gain (12dB) of the 2SC5226A-4-TL-E provide enhanced performance margins. PCB layout and component placement remain unchanged.

Q: What are the key differences between the 2SC5226A-4-TL-E and BFR360L3E6765XTMA1?

A: The 2SC5226A-4-TL-E operates at 7GHz with 10V rating and SC-70 packaging. The BFR360L3E6765XTMA1 operates at 14GHz with 9V rating and SC-101 packaging. The BFR360L3E6765XTMA1 is suitable for higher frequency applications but requires PCB redesign due to different package footprint. Both parts maintain 150°C operating temperature and ROHS3 compliance.

Q: Is the 2SC5065-Y(TE85L,F) suitable as a substitute?

A: The 2SC5065-Y(TE85L,F) meets voltage and frequency requirements (12V, 7GHz) with SC-70 packaging compatibility. However, maximum power dissipation is limited to 100mW compared to the original 150mW, and operating temperature is reduced to 125°C. This part is suitable only for applications with reduced power requirements and lower thermal operating conditions.

Q: Why is the MRF422 not recommended as a substitute?

A: The MRF422 uses chassis mount configuration and 211-11 package, which is fundamentally incompatible with the surface mount SC-70 / SOT-323 requirement of the 2SC5245A-4-TL-E. This part is designed for different application classes and cannot be used as a direct replacement.

Q: What compliance certifications apply to all substitute parts?

A: All recommended substitute parts maintain ROHS3 compliance and unlimited moisture sensitivity level (MSL 1). All parts are classified as REACH Unaffected and carry EAR99 export classification. These certifications ensure regulatory compliance across all substitute options.

Q: Can the BFP640FESDH6327XTSA1 be used in place of the 2SC5245A-4-TL-E?

A: The BFP640FESDH6327XTSA1 operates at 46GHz with 4.7V voltage rating and 4-TSFP surface mount package. While power dissipation (200mW) exceeds the original specification, the reduced voltage rating (4.7V versus 10V) and different package footprint (4-SMD, Flat Leads) make this part unsuitable for direct substitution. This part is applicable only for ultra-high frequency designs with compatible voltage and package requirements.

Q: What is the primary criterion for selecting a substitute part?

A: The primary criterion is matching or exceeding the voltage rating (10V minimum), transition frequency (7GHz minimum), power dissipation (150mW minimum), and collector current (30mA minimum) of the original 2SC5245A-4-TL-E. Surface mount packaging compatibility and ROHS3 compliance are mandatory. The 2SC5226A-4-TL-E satisfies all criteria with active product status and manufacturer recommendation.

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