2SC5242-O(Q) Equivalent & Substitute Parts

Part Overview

The 2SC5242-O(Q) is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, designed for high-voltage, high-current applications. This Through Hole TO-3P package device operates at 230 V collector-emitter breakdown voltage with a maximum collector current of 15 A and 130 W power dissipation capability. The transistor is classified as Active product status with RoHS compliance. Substitute parts are identified when original stock availability is limited, when alternative manufacturers are preferred for supply chain diversification, or when enhanced electrical specifications provide operational advantages within the same application envelope.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	230	V
Current - Collector (Ic) (Max)	15	A
Power - Max	130	W
Frequency - Transition	30	MHz
Mounting Type	Through Hole	—
Package / Case	TO-3P-3, SC-65-3	—
Operating Temperature (Max)	150	°C

Substitute Part Grouping Explanation

Substitution eligibility for the 2SC5242-O(Q) is determined by the following critical parameters: transistor type (NPN), mounting configuration (Through Hole), package family (TO-3P variants), transition frequency (30 MHz), and maximum power dissipation (130 W or greater). All identified substitute parts maintain these core specifications. Voltage and current ratings are evaluated on a case-by-case basis; substitute parts with equal or higher voltage and current ratings are considered compatible for applications designed around the 2SC5242-O(Q) specifications. The substitute parts 2SC5242OTU, FJA4313OTU, and NJW0281G meet these substitution criteria through equivalent or superior electrical performance within the same physical package family.

Parameter Comparison

Parameter	2SC5242-O(Q)	2SC5242OTU	FJA4313OTU	NJW0281G
Manufacturer	Toshiba	onsemi	onsemi	onsemi
Transistor Type	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	230 V	250 V	250 V	250 V
Current - Collector (Ic) (Max)	15 A	17 A	17 A	15 A
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A	3V @ 800mA, 8A	3V @ 800mA, 8A	1V @ 500mA, 5A
Current - Collector Cutoff (Max)	5µA (ICBO)	5µA (ICBO)	500nA (ICBO)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V	80 @ 1A, 5V	35 @ 7A, 5V	75 @ 3A, 5V
Power - Max	130 W	130 W	130 W	150 W
Frequency - Transition	30 MHz	30 MHz	30 MHz	30 MHz
Operating Temperature (Max)	150°C	150°C	150°C	150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3
RoHS Status	RoHS Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

2SC5242OTU (onsemi): This substitute provides enhanced voltage rating (250 V versus 230 V) and increased collector current capacity (17 A versus 15 A) while maintaining identical power dissipation (130 W), transition frequency (30 MHz), and saturation characteristics. ROHS3 compliance and Active product status support long-term availability. This part is suitable for applications requiring marginal performance headroom within the same thermal and package constraints.

FJA4313OTU (onsemi): This substitute matches voltage (250 V) and power (130 W) specifications with increased collector current (17 A). The significantly lower collector cutoff current (500 nA versus 5 µA) indicates superior leakage performance. Lower DC current gain (35 @ 7A versus 80 @ 1A) reflects different bias point optimization. ROHS3 compliance and Active status are confirmed. This part is applicable where reduced leakage current provides circuit advantage.

NJW0281G (onsemi): This substitute maintains collector current (15 A) and voltage (250 V) ratings while providing enhanced power dissipation (150 W versus 130 W). Superior saturation voltage (1 V @ 500mA, 5A versus 3V @ 800mA, 8A) indicates lower on-state losses. Extended operating temperature range (-65°C to 150°C versus 150°C maximum) supports wider environmental applications. ROHS3 compliance and Active status are confirmed. This part is suitable for applications benefiting from improved thermal performance and lower saturation losses.

Frequently Asked Questions (FAQ)

Q: Can 2SC5242OTU directly replace 2SC5242-O(Q) in existing circuit designs?

A: Yes. The 2SC5242OTU maintains identical saturation voltage, transition frequency, and power dissipation specifications. The higher voltage rating (250 V) and collector current (17 A) provide operational margin without requiring circuit modification. Both parts use TO-3P package family with compatible pinouts.

Q: What is the primary difference between FJA4313OTU and 2SC5242OTU?

A: Both parts share 250 V voltage rating, 17 A collector current, and 130 W power dissipation. The FJA4313OTU exhibits significantly lower collector cutoff current (500 nA versus 5 µA), indicating superior leakage performance. The FJA4313OTU has lower DC current gain (35 @ 7A) compared to 2SC5242OTU (80 @ 1A), reflecting different bias point characteristics. Package designation differs: FJA4313OTU uses TO-3PN while 2SC5242OTU uses TO-3P.

Q: When should NJW0281G be selected over other substitutes?

A: NJW0281G is selected when thermal performance or saturation loss reduction is critical. The 150 W power rating (versus 130 W) and superior saturation voltage (1 V @ 500mA, 5A) reduce on-state power dissipation. Extended operating temperature range (-65°C to 150°C) supports applications with wider environmental requirements. Collector current remains at 15 A, matching the original 2SC5242-O(Q) specification.

Q: Are all substitute parts RoHS compliant?

A: Yes. The original 2SC5242-O(Q) is RoHS Compliant. All substitute parts (2SC5242OTU, FJA4313OTU, NJW0281G) are ROHS3 Compliant, confirming hazardous substance restrictions compliance.

Q: Do package differences between TO-3P and TO-3PN affect physical mounting?

A: Both TO-3P and TO-3PN variants belong to the TO-3P package family with identical mechanical footprints and pin configurations. The designations reflect manufacturer-specific package nomenclature. Physical mounting compatibility is maintained across all substitute parts.

Q: What is the significance of collector cutoff current (ICBO) differences?

A: Collector cutoff current represents reverse leakage in the collector-base junction. Lower ICBO values (FJA4313OTU at 500 nA) indicate superior leakage performance compared to higher values (2SC5242-O(Q) at 5 µA). Lower leakage reduces standby power consumption and improves circuit stability in high-impedance applications.

Q: Can substitute parts be mixed in the same circuit board assembly?

A: Yes. All substitute parts maintain compatible pinouts, package families, and electrical specifications within the TO-3P family. Mixed usage is permissible provided thermal management and circuit design account for individual part characteristics, particularly saturation voltage and power dissipation differences.

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