2SC5226A-4-TL-E Equivalent & Substitute Parts

Part Overview

The 2SC5226A-4-TL-E is an RF transistor NPN manufactured by onsemi, designed for high-frequency applications up to 7GHz. This surface mount device operates at 10V collector-emitter breakdown voltage with a maximum power dissipation of 150mW and is housed in an SC-70 / MCP3 package. The part is currently active in production with RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified operating parameters, accounting for variations in frequency response, voltage ratings, current handling, and package form factors that maintain functional compatibility in target applications.

Substiute Parts

2SC5226A-4-TL-E

onsemiIn Stock: 168802SC5226A-4-TL-E Datasheet

Current PartRFQ

2SC5087R(TE85L,F)

Toshiba Semiconductor and StorageIn Stock: 41762SC5087R(TE85L,F) Datasheet

SimilarRFQ

BFP196E6327HTSA1

Infineon TechnologiesIn Stock: 14347BFP196E6327HTSA1 Datasheet

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BFR840L3RHESDE6327XTSA1

Infineon TechnologiesIn Stock: 14013BFR840L3RHESDE6327XTSA1 Datasheet

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MMBTH10-TP

Micro Commercial CoIn Stock: 4106MMBTH10-TP Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the 2SC5226A-4-TL-E is determined by the following critical parameters:

Primary Substitution Criteria:

• Transistor Type: NPN configuration required
• Voltage Rating: Collector-emitter breakdown voltage must equal or exceed 10V
• Frequency Performance: Transition frequency must support 7GHz operation or higher
• Power Dissipation: Maximum power rating must be 150mW or greater
• Current Handling: Collector current maximum must accommodate 70mA or higher
• Mounting: Surface mount configuration required
• Compliance: RoHS3 compliance and MSL 1 rating preferred for equivalent environmental performance

Secondary Compatibility Factors:

• DC Current Gain (hFE): Minimum 90 at specified test conditions supports circuit biasing requirements
• Noise Figure: Performance at or below 1dB @ 1GHz maintains signal integrity
• Operating Temperature: 150°C maximum junction temperature or higher ensures thermal compatibility

The substitute parts listed below meet these criteria with variations in specific parameters that do not compromise functional performance in RF applications.

Parameter Comparison

Engineering Selection Recommendations

2SC5087R(TE85L,F) - Toshiba Semiconductor and Storage

This substitute provides equivalent power handling (150mW) and exceeds the frequency requirement at 8GHz. The 12V voltage rating provides additional margin above the 10V specification. DC current gain of 120 at 20mA, 10V exceeds the minimum requirement of 90. Collector current maximum of 80mA accommodates the 70mA specification. RoHS compliance and MSL 1 rating match the original part. Package form factor (SC-61AA / SMQ) differs from SC-70 / MCP3, requiring PCB layout verification. Operating temperature maximum of 125°C is 25°C lower than the original specification.

BFP196E6327HTSA1 - Infineon Technologies

This substitute exceeds specifications across multiple parameters: 12V voltage rating, 7.5GHz frequency, 700mW power dissipation, and 150mA collector current. Noise figure of 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz is within acceptable range. Gain specification of 10.5dB ~ 16.5dB encompasses the 12dB requirement. DC current gain of 70 @ 50mA, 8V meets minimum criteria. Operating temperature of 150°C matches the original. ROHS3 compliance and MSL 1 rating are equivalent. Package form factor (TO-253-4, TO-253AA / PG-SOT-143-3D) differs significantly from SC-70 / MCP3, requiring circuit board redesign.

BFR840L3RHESDE6327XTSA1 - Infineon Technologies

This substitute operates at 75GHz transition frequency, significantly exceeding the 7GHz requirement. However, the 2.6V collector-emitter breakdown voltage is substantially below the 10V specification and does not meet the primary voltage requirement. Collector current maximum of 35mA is insufficient for the 70mA specification. Power dissipation of 75mW is below the 150mW requirement. This part is not suitable for direct substitution in applications requiring 10V operation.

MMBTH10-TP - Micro Commercial Co

This substitute provides 25V voltage rating, exceeding the 10V specification with significant margin. However, the 650MHz transition frequency is substantially below the 7GHz requirement and does not support RF applications at the specified frequency. Collector current maximum of 50mA is below the 70mA specification. Power dissipation of 225mW exceeds the requirement. DC current gain of 60 @ 4mA, 10V is below the minimum of 90. This part is not suitable for RF applications requiring 7GHz operation.

Recommended Substitutes Based on Compliance and Performance:

Parts meeting primary substitution criteria with full compliance documentation:

• 2SC5087R(TE85L,F): Equivalent performance with RoHS compliance; package change required
• BFP196E6327HTSA1: Enhanced performance specifications with ROHS3 compliance; significant package redesign required

Parts not meeting primary substitution criteria:

• BFR840L3RHESDE6327XTSA1: Voltage rating insufficient
• MMBTH10-TP: Frequency specification insufficient

Frequently Asked Questions (FAQ)

Q: Can the 2SC5087R(TE85L,F) be used as a direct replacement for the 2SC5226A-4-TL-E?

A: The 2SC5087R(TE85L,F) meets the electrical performance requirements with equivalent power handling and exceeds frequency specifications. However, the package form factor differs (SC-61AA / SMQ versus SC-70 / MCP3), requiring PCB layout modification. The operating temperature maximum is 125°C compared to 150°C for the original part. Electrical substitution is valid; physical substitution requires board redesign.

Q: What is the primary limitation of the BFR840L3RHESDE6327XTSA1 as a substitute?

A: The BFR840L3RHESDE6327XTSA1 has a collector-emitter breakdown voltage of 2.6V, which is below the 10V requirement of the 2SC5226A-4-TL-E. Additionally, the maximum collector current of 35mA is insufficient for the 70mA specification. This part is not suitable for applications requiring 10V operation.

Q: Why is the MMBTH10-TP not recommended as a substitute?

A: The MMBTH10-TP operates at 650MHz transition frequency, which is substantially below the 7GHz requirement. This part is designed for lower-frequency applications and does not meet the RF performance specifications of the 2SC5226A-4-TL-E. The maximum collector current of 50mA is also below the 70mA specification.

Q: Are all substitute parts RoHS3 compliant?

A: The 2SC5087R(TE85L,F) is RoHS compliant. The BFP196E6327HTSA1, BFR840L3RHESDE6327XTSA1, and MMBTH10-TP are all ROHS3 compliant, matching the compliance level of the original 2SC5226A-4-TL-E.

Q: What package considerations apply when selecting a substitute?

A: The 2SC5226A-4-TL-E uses SC-70 / MCP3 packaging. The 2SC5087R(TE85L,F) uses SC-61AA / SMQ packaging, and the BFP196E6327HTSA1 uses TO-253-4 / TO-253AA packaging. Package differences require PCB layout verification and potential redesign. The BFR840L3RHESDE6327XTSA1 uses SC-101 / SOT-883 packaging, and the MMBTH10-TP uses TO-236-3 / SOT-23-3 packaging. Physical footprint compatibility must be confirmed before implementation.

Q: What is the moisture sensitivity level (MSL) for all parts?

A: All parts listed, including the 2SC5226A-4-TL-E and all substitute options, have an MSL rating of 1 (Unlimited). This indicates equivalent moisture handling requirements and storage conditions.

Q: Can the BFP196E6327HTSA1 be used in place of the 2SC5226A-4-TL-E?

A: The BFP196E6327HTSA1 exceeds the electrical specifications of the 2SC5226A-4-TL-E in voltage rating (12V versus 10V), frequency (7.5GHz versus 7GHz), power dissipation (700mW versus 150mW), and collector current (150mA versus 70mA). Electrical substitution is valid. However, the package form factor differs significantly (TO-253-4 / PG-SOT-143-3D versus SC-70 / MCP3), requiring substantial PCB redesign. Operating temperature maximum matches at 150°C, and ROHS3 compliance is equivalent.