Equivalent & Substitute Parts for 2SC5200-O(Q) NPN Bipolar Transistor

Part Overview

The 2SC5200-O(Q) is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, rated for 230 V collector-emitter breakdown voltage and 15 A maximum collector current. This through-hole TO-3P(L) package device is designed for high-power switching and amplification applications requiring 150 W power dissipation capability. The part maintains active product status with ROHS3 compliance and is currently in stock with 10,100 units available.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including collector current rating, voltage breakdown specifications, power dissipation capacity, and frequency response characteristics. Substitute parts may differ in packaging configuration, manufacturer, or specific parameter ratings while maintaining functional compatibility within defined application ranges.

Substiute Parts

2SC5200-O(Q)
Toshiba Semiconductor and StorageIn Stock: 101932SC5200-O(Q) Datasheet
2SC5200-O(Q)
Current Part
2SC5359-O(Q)
Toshiba Semiconductor and StorageIn Stock: 8102SC5359-O(Q) Datasheet
2SC5359-O(Q)
Direct
TTC0002(Q)
Toshiba Semiconductor and StorageIn Stock: 1092TTC0002(Q) Datasheet
TTC0002(Q)
Similar
2SC5200OTU
onsemiIn Stock: 63682SC5200OTU Datasheet
2SC5200OTU
Similar
FJL4315OTU
Fairchild SemiconductorIn Stock: 2502FJL4315OTU Datasheet
FJL4315OTU
Similar
MJL21194G
onsemiIn Stock: 1646MJL21194G Datasheet
MJL21194G
Similar
MJW21196G
onsemiIn Stock: 2007MJW21196G Datasheet
MJW21196G
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) (Max) 15 A
Voltage - Collector Emitter Breakdown (Max) 230 V
Power - Max 150 W
Frequency - Transition 30 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Current - Collector Cutoff (Max) 5 µA
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-3PL
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the 2SC5200-O(Q) are classified into two categories based on electrical parameter alignment:

Direct Substitutes (Identical Electrical Specifications): Parts that maintain the same collector current rating (15 A), collector-emitter breakdown voltage (230 V), transition frequency (30 MHz), and power dissipation (150 W or higher). These parts are interchangeable within the same application circuit without design modification.

Functional Equivalents (Similar Electrical Performance): Parts that exceed one or more critical parameters while maintaining compatibility with the primary application requirements. These include higher voltage ratings, increased current capacity, or enhanced power handling. Functional equivalents require verification that the application circuit can accommodate the substitute part's enhanced specifications without adverse effects.

Substitution Criteria:

  • Collector current rating equal to or greater than 15 A
  • Collector-emitter breakdown voltage equal to or greater than 230 V
  • Power dissipation equal to or greater than 150 W
  • Transition frequency equal to or greater than 30 MHz
  • DC current gain (hFE) minimum of 80 or higher
  • Through-hole mounting configuration
  • Active product status
  • ROHS3 or equivalent compliance

Parameter Comparison

Part Number Manufacturer Ic (Max) [A] Vce Breakdown (Max) [V] Power (Max) [W] Frequency [MHz] hFE (Min) Package Status
2SC5200-O(Q) Toshiba 15 230 150 30 80 TO-3PL Active
2SC5359-O(Q) Toshiba 15 230 180 30 80 TO-3PL Active
TTC0002(Q) Toshiba 18 160 180 30 80 TO-3PL Active
2SC5200OTU onsemi 17 250 150 30 80 TO-264-3 Active
FJL4315OTU Fairchild Semiconductor 17 250 150 30 80 TO-264-3 Active
MJL21194G onsemi 16 250 200 4 25 TO-264 Active
MJW21196G onsemi 16 250 200 4 20 TO-247-3 Active

Engineering Selection Recommendations

Direct Substitution (No Circuit Modification Required):

The 2SC5359-O(Q) manufactured by Toshiba is the primary direct substitute for the 2SC5200-O(Q). Both parts share identical collector current (15 A), collector-emitter breakdown voltage (230 V), transition frequency (30 MHz), and DC current gain specifications. The 2SC5359-O(Q) provides enhanced power dissipation (180 W versus 150 W), offering improved thermal margin in high-power applications. Both parts maintain TO-3PL package compatibility and ROHS3 compliance. The 2SC5359-O(Q) is available in bulk packaging with 797 units in stock.

Functional Equivalent with Package Modification:

The 2SC5200OTU (onsemi) and FJL4315OTU (Fairchild Semiconductor) are functional equivalents that exceed the primary electrical specifications. Both parts provide 17 A collector current (versus 15 A), 250 V collector-emitter breakdown voltage (versus 230 V), and maintain 30 MHz transition frequency and 80 hFE minimum. These parts utilize TO-264-3 package configuration rather than TO-3PL, requiring PCB layout modification and mechanical mounting adjustment. Both parts maintain ROHS3 compliance and active product status. The 2SC5200OTU is available with 6,320 units in stock; the FJL4315OTU has 2,450 units available.

Limited Compatibility Substitutes:

The TTC0002(Q) (Toshiba) maintains TO-3PL package compatibility and provides 18 A collector current and 180 W power dissipation. However, the collector-emitter breakdown voltage is reduced to 160 V (versus 230 V), limiting application to circuits with lower voltage requirements. This part is suitable only for applications where the 160 V rating is acceptable. The TTC0002(Q) is available with 1,077 units in stock.

The MJL21194G and MJW21196G (onsemi) provide enhanced power dissipation (200 W) and voltage rating (250 V) but exhibit significantly reduced transition frequency (4 MHz versus 30 MHz) and lower DC current gain specifications (25 and 20 hFE minimum, respectively). These parts are not recommended as substitutes for the 2SC5200-O(Q) due to frequency and gain incompatibility with typical application requirements.

Frequently Asked Questions (FAQ)

Q: Can the 2SC5359-O(Q) be used as a direct replacement for the 2SC5200-O(Q)?

A: Yes. The 2SC5359-O(Q) is a direct substitute with identical electrical specifications for collector current (15 A), collector-emitter breakdown voltage (230 V), transition frequency (30 MHz), and DC current gain (80 hFE minimum). The 2SC5359-O(Q) provides higher power dissipation (180 W versus 150 W), which improves thermal performance. Both parts use the TO-3PL package and require no circuit modification.

Q: What is the primary difference between the 2SC5200-O(Q) and 2SC5200OTU?

A: The 2SC5200OTU is manufactured by onsemi rather than Toshiba and uses a TO-264-3 package instead of TO-3PL. Electrically, the 2SC5200OTU provides higher collector current (17 A versus 15 A) and collector-emitter breakdown voltage (250 V versus 230 V) while maintaining 30 MHz transition frequency. Package substitution requires PCB layout and mechanical mounting modifications.

Q: Can the MJL21194G replace the 2SC5200-O(Q)?

A: The MJL21194G is not a suitable substitute. While it provides higher power dissipation (200 W) and voltage rating (250 V), the transition frequency is significantly reduced to 4 MHz (versus 30 MHz), and the DC current gain is substantially lower at 25 hFE minimum (versus 80 hFE minimum). These differences make the MJL21194G incompatible with applications designed for the 2SC5200-O(Q).

Q: Are all substitute parts ROHS3 compliant?

A: The 2SC5200-O(Q), 2SC5359-O(Q), 2SC5200OTU, and FJL4315OTU are ROHS3 compliant. The TTC0002(Q) is RoHS compliant. The MJL21194G and MJW21196G are ROHS3 compliant. All parts meet environmental compliance requirements for industrial applications.

Q: What packaging options are available for substitutes?

A: The 2SC5359-O(Q) maintains the original TO-3PL package. The 2SC5200OTU and FJL4315OTU use TO-264-3 package configuration. The MJL21194G uses TO-264 package. The MJW21196G uses TO-247-3 package. Package selection depends on PCB layout constraints and thermal management requirements.

Q: Which substitute offers the best thermal performance?

A: The 2SC5359-O(Q) and TTC0002(Q) both provide 180 W power dissipation (versus 150 W for the 2SC5200-O(Q)), offering improved thermal margin. The MJL21194G and MJW21196G provide 200 W power dissipation but are not electrically compatible. For direct substitution with enhanced thermal performance, the 2SC5359-O(Q) is the optimal choice.

Q: Can the TTC0002(Q) be used in all applications designed for the 2SC5200-O(Q)?

A: The TTC0002(Q) is suitable only for applications where the reduced collector-emitter breakdown voltage (160 V versus 230 V) is acceptable. Applications requiring the full 230 V rating cannot use the TTC0002(Q). Verify circuit voltage requirements before selecting this substitute.

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