2SC5198-O(S1,E Equivalent & Substitute Parts

Part Overview

The 2SC5198-O(S1,E is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. This through-hole component is rated for 140 V collector-emitter breakdown voltage and 10 A maximum collector current, with a maximum power dissipation of 100 W. The device is housed in a TO-3P package and operates at a transition frequency of 30 MHz with a maximum junction temperature of 150°C. The part maintains Active product status and is RoHS Compliant with unlimited moisture sensitivity level (MSL 1). Equivalent and substitute parts are identified to provide design flexibility, inventory alternatives, and sourcing options while maintaining functional compatibility within specified electrical and mechanical parameters.

Substiute Parts

2SC5198-O(S1,E
Toshiba Semiconductor and StorageIn Stock: 10152SC5198-O(S1,E Datasheet
2SC5198-O(S1,E
Current Part
TIP35CP
STMicroelectronicsIn Stock: 1707TIP35CP Datasheet
TIP35CP
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 140 V
Current - Collector (Ic) (Max) 10 A
Power - Max 100 W
Frequency - Transition 30 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
RoHS Status RoHS Compliant

Substitute Part Grouping Explanation

Substitution of the 2SC5198-O(S1,E with the TIP35CP is determined by the following criteria:

Allowed Substitution Parameters:

  • Transistor Type: Both devices are NPN bipolar junction transistors
  • Mounting Type: Both use through-hole mounting
  • Package / Case: Both use TO-3P-3 and SC-65-3 packages
  • Operating Temperature: Both rated to 150°C maximum junction temperature
  • RoHS Compliance: Both meet environmental compliance requirements

Substitution Logic: The TIP35CP operates within the electrical envelope of the 2SC5198-O(S1,E application space. The substitute part provides higher maximum collector current (25 A versus 10 A) and higher maximum power dissipation (125 W versus 100 W), making it suitable for applications requiring the 2SC5198-O(S1,E specifications. The TIP35CP has a lower collector-emitter breakdown voltage (100 V versus 140 V), which requires circuit-level verification that the application does not exceed 100 V. Both devices share identical mechanical compatibility through the TO-3P package footprint.

Parameter Comparison

Parameter 2SC5198-O(S1,E TIP35CP Unit
Manufacturer Toshiba Semiconductor and Storage STMicroelectronics
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 10 25 A
Voltage - Collector Emitter Breakdown (Max) 140 100 V
Power - Max 100 125 W
Frequency - Transition 30 3 MHz
Operating Temperature (TJ) 150 150 °C
Mounting Type Through Hole Through Hole
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
RoHS Status RoHS Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

2SC5198-O(S1,E Selection Criteria: Select the 2SC5198-O(S1,E when the application requires a maximum collector-emitter breakdown voltage of 140 V with a maximum collector current of 10 A and transition frequency of 30 MHz. This part is Active in product status and maintains RoHS Compliance certification. The device is suitable for applications where higher voltage rating and higher frequency response are design requirements.

TIP35CP Selection Criteria: Select the TIP35CP when the application operates at or below 100 V collector-emitter breakdown voltage and requires higher collector current capability (up to 25 A) or higher power dissipation (125 W). The TIP35CP is Active in product status and maintains ROHS3 Compliance certification. This part is suitable for applications where increased current handling and power dissipation are required within the 100 V voltage constraint. The lower transition frequency (3 MHz versus 30 MHz) must be evaluated against application frequency requirements.

Both parts are Active products with unlimited moisture sensitivity level and are suitable for through-hole assembly in TO-3P package configurations.

Frequently Asked Questions (FAQ)

Q: Can the TIP35CP directly replace the 2SC5198-O(S1,E in all applications?

A: Direct replacement is limited by the TIP35CP's lower collector-emitter breakdown voltage of 100 V compared to the 2SC5198-O(S1,E rating of 140 V. Applications operating above 100 V require the 2SC5198-O(S1,E. Applications operating at or below 100 V can use the TIP35CP.

Q: What are the mechanical compatibility considerations?

A: Both the 2SC5198-O(S1,E and TIP35CP use identical TO-3P-3 and SC-65-3 package configurations with through-hole mounting. PCB footprints and thermal management interfaces are mechanically compatible.

Q: How do the frequency characteristics differ?

A: The 2SC5198-O(S1,E has a transition frequency of 30 MHz, while the TIP35CP operates at 3 MHz. Applications requiring higher frequency response must use the 2SC5198-O(S1,E.

Q: Are both parts RoHS compliant?

A: Yes. The 2SC5198-O(S1,E is RoHS Compliant. The TIP35CP is ROHS3 Compliant. Both meet environmental compliance requirements.

Q: What is the moisture sensitivity level for both parts?

A: Both the 2SC5198-O(S1,E and TIP35CP have MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage and handling.

Q: Which part should be selected for high-current applications?

A: The TIP35CP is rated for 25 A maximum collector current compared to the 2SC5198-O(S1,E at 10 A. For applications requiring collector currents above 10 A, the TIP35CP is suitable if the 100 V voltage rating is acceptable.

Q: What is the maximum power dissipation for each part?

A: The 2SC5198-O(S1,E is rated for 100 W maximum power dissipation. The TIP35CP is rated for 125 W maximum power dissipation.

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