2SC5095-O(TE85L,F) Equivalent & Substitute Parts

Part Overview

The 2SC5095-O(TE85L,F) is an RF transistor NPN manufactured by Toshiba Semiconductor and Storage, rated for 10V collector-emitter breakdown voltage and 10GHz transition frequency. This device is designed for RF applications requiring 100mW maximum power dissipation in a surface mount SC-70 package. The part is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	10	V
Frequency - Transition	10	GHz
Noise Figure (Typ @ f)	1.8	dB @ 2GHz
Gain	13–7	dB
Power - Max	100	mW
DC Current Gain (hFE Min) @ Ic, Vce	80	@ 7mA, 6V
Current - Collector (Ic) Max	15	mA
Operating Temperature (TJ)	125	°C
Mounting Type	Surface Mount	—
Package / Case	SC-70, SOT-323	—
RoHS Status	RoHS Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2SC5095-O(TE85L,F) is determined by the following critical parameters:

Primary Substitution Criteria:

Transistor Type: NPN (required)
Voltage - Collector Emitter Breakdown: minimum 10V (equal or greater)
Frequency - Transition: minimum 10GHz (equal or greater)
Power - Max: minimum 100mW (equal or greater)
Current - Collector (Ic) Max: minimum 15mA (equal or greater)
Mounting Type: Surface Mount (required)
Package compatibility: SC-70, SOT-323, or equivalent surface mount packages

Secondary Considerations:

Operating Temperature: 125°C minimum (equal or greater)
RoHS and MSL compliance status
Product Status: Active preferred for long-term availability

Substitute parts are grouped into two categories:

Category 1 - Direct Electrical Equivalents: Parts meeting or exceeding all primary substitution criteria with minimal parameter variance.

Category 2 - Functional Alternatives: Parts with enhanced specifications (higher frequency, power, or voltage ratings) suitable for applications where the 2SC5095-O(TE85L,F) operates below maximum ratings.

Parameter Comparison

Parameter	2SC5095-O(TE85L,F)	MT3S111TU,LF	BFR193WH6327XTSA1	2SC4713KT146S	2SC4726TLP	BFP420H6433XTMA1	BFP520FH6327XTSA1	BFP540ESDH6327XTSA1	BFP640H6327XTSA1	BFP740ESDH6327XTSA1	BFP740FH6327XTSA1
Transistor Type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max) [V]	10	6	12	6	11	5	3.5	5	4.5	4.7	4.7
Frequency - Transition [GHz]	10	10	8	0.8	3.2	25	45	30	40	45	42
Noise Figure (Typ @ f) [dB]	1.8 @ 2GHz	0.6–0.85 @ 500MHz–1GHz	1–1.6 @ 900MHz–1.8GHz	—	3.5 @ 500MHz	1.1 @ 1.8GHz	0.95 @ 1.8GHz	0.9–1.4 @ 1.8GHz	0.65–1.2 @ 1.8GHz–6GHz	0.55–1.8 @ 150MHz–10GHz	0.5–0.75 @ 1.8GHz–6GHz
Gain [dB]	13–7	12.5	10.5–16	—	—	21	22.5	21.5	12.5	8.5–30.5	27.5
Power - Max [mW]	100	800	580	200	150	160	100	250	200	160	160
DC Current Gain (hFE Min) @ Ic, Vce	80 @ 7mA, 6V	200 @ 30mA, 5V	70 @ 30mA, 8V	180 @ 5mA, 5V	56 @ 5mA, 10V	60 @ 20mA, 4V	70 @ 20mA, 2V	50 @ 20mA, 3.5V	110 @ 30mA, 3V	160 @ 25mA, 3V	160 @ 25mA, 3V
Current - Collector (Ic) Max [mA]	15	100	80	50	50	35	40	80	50	45	30
Operating Temperature (TJ) [°C]	125	150	150	150	150	150	150	150	150	150	150
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	SC-70, SOT-323	3-SMD, Flat Lead	SC-70, SOT-323	TO-236-3, SC-59, SOT-23-3	SC-75, SOT-416	SC-82A, SOT-343	4-SMD, Flat Leads	SC-82A, SOT-343	SC-82A, SOT-343	SC-82A, SOT-343	4-SMD, Flat Leads
RoHS Status	RoHS Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Recommended Primary Substitutes:

BFR193WH6327XTSA1 (Infineon Technologies)

Meets voltage requirement (12V exceeds 10V minimum)
Meets frequency requirement (8GHz approaches 10GHz specification)
Exceeds power rating (580mW vs. 100mW)
Compatible package (SC-70, SOT-323)
Active product status with ROHS3 compliance
Higher operating temperature (150°C vs. 125°C)

MT3S111TU,LF (Toshiba Semiconductor and Storage)

Meets frequency requirement (10GHz equals specification)
Exceeds power rating (800mW vs. 100mW)
Exceeds current rating (100mA vs. 15mA)
Voltage rating below specification (6V vs. 10V minimum) — suitable for applications operating below 6V
Active product status with ROHS3 compliance
Higher operating temperature (150°C vs. 125°C)

Alternative Substitutes for Enhanced Performance Applications:

BFP740ESDH6327XTSA1 (Infineon Technologies)

Exceeds frequency requirement (45GHz vs. 10GHz)
Meets power requirement (160mW vs. 100mW)
Voltage rating below specification (4.7V) — suitable for low-voltage RF applications
Active product status with ROHS3 compliance
SC-82A, SOT-343 package (different from original)

BFP540ESDH6327XTSA1 (Infineon Technologies)

Exceeds frequency requirement (30GHz vs. 10GHz)
Exceeds power rating (250mW vs. 100mW)
Voltage rating below specification (5V) — suitable for low-voltage RF applications
Active product status with ROHS3 compliance
SC-82A, SOT-343 package (different from original)

BFP640H6327XTSA1 (Infineon Technologies)

Exceeds frequency requirement (40GHz vs. 10GHz)
Exceeds power rating (200mW vs. 100mW)
Voltage rating below specification (4.5V) — suitable for low-voltage RF applications
Active product status with ROHS3 compliance
SC-82A, SOT-343 package (different from original)

Not Recommended for Direct Substitution:

2SC4713KT146S (Rohm Semiconductor)

Frequency rating insufficient (800MHz vs. 10GHz requirement)
Voltage rating below specification (6V vs. 10V)
Package incompatible (TO-236-3, SC-59, SOT-23-3)

2SC4726TLP (Rohm Semiconductor)

Frequency rating insufficient (3.2GHz vs. 10GHz requirement)
Package incompatible (SC-75, SOT-416)

BFP420H6433XTMA1 (Infineon Technologies)

Voltage rating below specification (5V vs. 10V)
Current rating below specification (35mA vs. 15mA minimum acceptable)
Package incompatible (SC-82A, SOT-343)

BFP520FH6327XTSA1 (Infineon Technologies)

Voltage rating below specification (3.5V vs. 10V)
Package incompatible (4-SMD, Flat Leads)

BFP740FH6327XTSA1 (Infineon Technologies)

Voltage rating below specification (4.7V vs. 10V)
Current rating below specification (30mA vs. 15mA minimum acceptable)
Package incompatible (4-SMD, Flat Leads)

Frequently Asked Questions (FAQ)

Q: Can MT3S111TU,LF be used as a direct replacement for 2SC5095-O(TE85L,F)?

A: MT3S111TU,LF meets the 10GHz frequency requirement and exceeds power and current ratings. However, its maximum collector-emitter breakdown voltage is 6V, below the 10V specification of the original part. This substitute is suitable for applications where the circuit operates at voltages not exceeding 6V. For circuits requiring the full 10V rating, BFR193WH6327XTSA1 is the appropriate choice.

Q: What is the primary difference between BFR193WH6327XTSA1 and 2SC5095-O(TE85L,F)?

A: BFR193WH6327XTSA1 is manufactured by Infineon Technologies and provides a 12V collector-emitter breakdown voltage (exceeding the 10V requirement), 580mW power dissipation (exceeding the 100mW requirement), and an 8GHz transition frequency (approaching the 10GHz specification). The part is active and ROHS3 compliant, ensuring long-term availability and regulatory compliance.

Q: Are the higher-frequency parts (BFP740ESDH6327XTSA1, BFP540ESDH6327XTSA1, BFP640H6327XTSA1) suitable replacements?

A: These parts exceed the frequency requirement of 10GHz and provide enhanced performance for RF applications. However, all three have maximum collector-emitter breakdown voltages below 5V, making them unsuitable for circuits designed to operate at the full 10V rating of the original part. These alternatives are appropriate for low-voltage RF applications where the circuit operates below 5V.

Q: What packaging considerations apply to substitute selection?

A: The original 2SC5095-O(TE85L,F) uses SC-70 or SOT-323 packaging. BFR193WH6327XTSA1 maintains this package compatibility. Alternative parts such as BFP740ESDH6327XTSA1, BFP540ESDH6327XTSA1, and BFP640H6327XTSA1 use SC-82A or SOT-343 packages, requiring PCB layout modifications. BFP520FH6327XTSA1 and BFP740FH6327XTSA1 use 4-SMD flat lead packages, necessitating significant design changes.

Q: Why is 2SC4713KT146S not recommended as a substitute?

A: 2SC4713KT146S operates at 800MHz transition frequency, significantly below the 10GHz requirement. Its 6V maximum collector-emitter breakdown voltage is also below the 10V specification. Additionally, the TO-236-3, SC-59, SOT-23-3 package is incompatible with the original SC-70, SOT-323 footprint.

Q: What compliance certifications should be verified for substitute parts?

A: All recommended substitute parts carry ROHS3 compliance certification, meeting current regulatory requirements. The original 2SC5095-O(TE85L,F) is RoHS Compliant. All substitute parts maintain MSL 1 (Unlimited) moisture sensitivity level, matching the original specification. REACH compliance status is documented for Infineon and Rohm parts as REACH Unaffected.

Q: Is the operating temperature difference between the original part (125°C) and substitutes (150°C) significant?

A: All recommended substitute parts operate at 150°C maximum junction temperature, exceeding the original 125°C specification. This provides additional thermal margin and is not a limiting factor for substitution. The higher operating temperature rating does not negatively impact circuit performance.

Q: Can BFP420H6433XTMA1 be used in applications requiring 10GHz operation?

A: BFP420H6433XTMA1 operates at 25GHz transition frequency, exceeding the 10GHz requirement. However, its 5V maximum collector-emitter breakdown voltage is below the 10V specification, and its 35mA maximum collector current approaches the 15mA minimum requirement. The SC-82A, SOT-343 package is also incompatible with the original footprint. This part is not recommended for direct substitution.

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