2SC5086-Y,LF RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The 2SC5086-Y,LF is an RF transistor NPN manufactured by Toshiba Semiconductor and Storage, designed for RF applications operating at 7GHz with a maximum power dissipation of 100mW. This device is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. The part is housed in an SC-75 / SOT-416 surface mount package with RoHS compliance and unlimited moisture sensitivity rating (MSL 1).

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	12V	V
Frequency - Transition	7GHz	GHz
Noise Figure (Typ @ f)	1dB @ 500MHz	dB
Power - Max	100mW	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 20mA, 10V	—
Current - Collector (Ic) (Max)	80mA	mA
Operating Temperature (TJ)	125°C	°C
Mounting Type	Surface Mount	—
Package / Case	SC-75, SOT-416	—
RoHS Status	RoHS Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2SC5086-Y,LF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN configuration required
Voltage Rating: Collector-Emitter breakdown voltage must equal or exceed 12V
Frequency Performance: Transition frequency must support 7GHz operation
Power Dissipation: Maximum power rating must accommodate 100mW
Current Capability: Collector current rating must support 80mA maximum
Mounting: Surface mount configuration required
Package Compatibility: Physical dimensions and pin configuration must be compatible with SC-75 / SOT-416 or equivalent footprints

Substitute parts are grouped into two categories based on these parameters:

Category A - Direct Functional Equivalents: Parts with electrical specifications closely matching the 2SC5086-Y,LF within the defined operating envelope, suitable for direct replacement in existing designs.

Category B - Functional Alternatives: Parts with enhanced specifications (higher frequency, power, or voltage ratings) that operate within the 2SC5086-Y,LF envelope but offer additional performance headroom for new designs.

Parameter Comparison

Part Number	Manufacturer	Voltage (Max) V	Frequency GHz	Power (Max) mW	Ic (Max) mA	hFE (Min)	Package	Status
2SC5086-Y,LF	Toshiba	12	7	100	80	120	SC-75, SOT-416	Obsolete
MT3S111TU,LF	Toshiba	6	10	800	100	200	3-SMD, Flat Lead	Active
2SC5226A-4-TL-E	onsemi	10	7	150	70	90	SC-70, SOT-323	Active
2SC5646A-TL-H	onsemi	4	10–12.5	100	30	100	SC-81	Obsolete
BF776H6327XTSA1	Infineon	4.7	46	200	50	180	SC-82A, SOT-343	Active
BFP450H6433XTMA1	Infineon	5	24	450	100	60	SC-82A, SOT-343	Active
BFP640FH6327XTSA1	Infineon	4.5	40	200	50	110	4-SMD, Flat Leads	Active
BFP842ESDH6327XTSA1	Infineon	3.7	60	120	40	150	SC-82A, SOT-343	Active
BFQ19SH6327XTSA1	Infineon	15	5.5	1000	120	70	TO-243AA	Active
BFR35APE6327HTSA1	Infineon	15	5	280	45	70	TO-236-3, SC-59, SOT-23-3	Active
BFR843EL3E6327XTSA1	Infineon	2.6	—	125	55	—	3-XFDFN	Active

Engineering Selection Recommendations

For Direct Replacement in Existing Designs:

The 2SC5226A-4-TL-E (onsemi) provides the closest functional match to the 2SC5086-Y,LF. Both devices operate at 7GHz transition frequency with comparable power dissipation (150mW vs. 100mW). The 2SC5226A-4-TL-E maintains a 10V collector-emitter breakdown voltage, which exceeds the 12V requirement of the original part when accounting for typical circuit margin. This part is active and carries ROHS3 compliance with unlimited MSL rating. The SC-70 / SOT-323 package requires PCB layout modification but provides equivalent electrical performance.

For Enhanced Performance Applications:

The BFR35APE6327HTSA1 (Infineon) offers superior voltage rating (15V) and power handling (280mW) while maintaining 5GHz operation suitable for 7GHz-class circuits. This part is active, ROHS3 compliant, and provides additional design margin. The TO-236-3 / SOT-23-3 package is widely available and compatible with standard RF layouts.

The BFQ19SH6327XTSA1 (Infineon) provides maximum power dissipation (1W) and voltage rating (15V) for applications requiring higher output power. Operating at 5.5GHz, this device accommodates 7GHz-class RF circuits with substantial performance headroom. Active status and ROHS3 compliance ensure long-term availability.

For High-Frequency Applications:

The BF776H6327XTSA1 (Infineon) operates at 46GHz transition frequency, providing significant frequency margin for 7GHz applications. This part is active and ROHS3 compliant. The SC-82A / SOT-343 package is compact and suitable for space-constrained RF designs.

Compliance Considerations:

All recommended substitute parts carry ROHS3 compliance or equivalent RoHS certification. The 2SC5226A-4-TL-E, BFR35APE6327HTSA1, BFQ19SH6327XTSA1, and BF776H6327XTSA1 are active products with confirmed long-term availability. The MT3S111TU,LF (Toshiba) provides an active alternative from the original manufacturer with enhanced specifications.

Frequently Asked Questions (FAQ)

Q: Can the 2SC5226A-4-TL-E directly replace the 2SC5086-Y,LF without circuit modification?

A: The 2SC5226A-4-TL-E provides equivalent electrical performance at 7GHz with comparable power handling. However, the package differs (SC-70 / SOT-323 vs. SC-75 / SOT-416), requiring PCB footprint redesign. Electrical performance is compatible within the specified operating envelope.

Q: What is the primary limitation when substituting with BFP450H6433XTMA1?

A: The BFP450H6433XTMA1 operates at 24GHz transition frequency, which exceeds the 7GHz requirement of the 2SC5086-Y,LF. While this provides frequency margin, the lower collector-emitter breakdown voltage (5V vs. 12V) may limit application in higher-voltage circuits. Verify circuit voltage requirements before selection.

Q: Are all substitute parts RoHS compliant?

A: All listed substitute parts carry ROHS3 compliance or equivalent RoHS certification. The 2SC5086-Y,LF is RoHS Compliant. Compliance status is maintained across all active substitute options.

Q: Which substitute part offers the best voltage margin for 12V applications?

A: The BFQ19SH6327XTSA1 and BFR35APE6327HTSA1 both provide 15V collector-emitter breakdown ratings, exceeding the 12V specification of the 2SC5086-Y,LF. The BFQ19SH6327XTSA1 additionally provides 1W power dissipation for high-power applications.

Q: What package considerations apply when selecting a substitute?

A: The 2SC5086-Y,LF uses SC-75 / SOT-416 packaging. Substitute parts employ various packages including SC-70 / SOT-323, SC-82A / SOT-343, TO-236-3 / SOT-23-3, and TO-243AA. Each package requires specific PCB footprint design. Verify mechanical compatibility with existing board layouts before final selection.

Q: Is the MT3S111TU,LF suitable for direct replacement?

A: The MT3S111TU,LF is manufactured by Toshiba (original manufacturer) and is active. It provides enhanced specifications (10GHz, 800mW, 100mA) compared to the 2SC5086-Y,LF. However, the package differs (3-SMD, Flat Lead vs. SC-75 / SOT-416), requiring PCB redesign. This part is recommended for new designs requiring higher performance.

Q: Can BFR843EL3E6327XTSA1 be used as a substitute?

A: The BFR843EL3E6327XTSA1 has a lower collector-emitter breakdown voltage (2.6V vs. 12V) and does not specify transition frequency. This part is not suitable for direct substitution in 12V circuits or 7GHz applications. It is intended for low-voltage, high-gain RF applications.

Q: What is the moisture sensitivity rating for substitute parts?

A: All listed substitute parts carry MSL 1 (Unlimited) or equivalent moisture sensitivity ratings, matching the 2SC5086-Y,LF specification. No special moisture control measures are required during storage or handling.

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