2SC5086-O,LF RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The 2SC5086-O,LF is an RF transistor NPN manufactured by Toshiba Semiconductor and Storage, designed for RF applications operating at 7GHz with a maximum power dissipation of 100mW. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The part operates at 12V collector-emitter breakdown voltage with a maximum collector current of 80mA and is packaged in a surface mount SC-75 (SSM) configuration.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	12V	V
Frequency - Transition	7GHz	GHz
Power - Max	100mW	mW
Current - Collector (Ic) (Max)	80mA	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 20mA, 10V	—
Noise Figure (dB Typ @ f)	1dB @ 500MHz	dB
Operating Temperature (TJ)	125°C	°C
Mounting Type	Surface Mount	—
Package / Case	SC-75, SOT-416	—
RoHS Status	RoHS Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2SC5086-O,LF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN (required match)
Voltage - Collector Emitter Breakdown: 12V or higher (to maintain voltage headroom)
Frequency - Transition: 7GHz or higher (to support RF performance)
Power - Max: 100mW or higher (to handle power dissipation)
Current - Collector (Ic) (Max): 80mA or higher (to support current requirements)
Mounting Type: Surface Mount (required for PCB compatibility)

Secondary Compatibility Factors:

DC Current Gain (hFE): Minimum 80 at specified conditions
Noise Figure: 1dB or lower at 500MHz or nearby frequency
Operating Temperature: 125°C or higher
RoHS Compliance: Required for regulatory alignment
Moisture Sensitivity Level: MSL 1 preferred

Substitute parts are grouped into two categories based on voltage and frequency alignment:

Category A - Direct Voltage/Frequency Alignment (12V, 8GHz+): Parts that maintain 12V breakdown voltage and exceed 7GHz frequency specification, ensuring direct functional replacement with equivalent or improved RF performance.

Category B - Reduced Voltage Substitutes (5V, 25GHz+): Parts with lower voltage ratings but significantly higher frequency capability, suitable for applications where 12V is not required and higher frequency performance is beneficial.

Parameter Comparison

Part Number	Manufacturer	Voltage (Max)	Frequency	Power (Max)	Ic (Max)	hFE (Min)	Noise Figure	Operating Temp	Package	Status
2SC5086-O,LF	Toshiba	12V	7GHz	100mW	80mA	80 @ 20mA, 10V	1dB @ 500MHz	125°C	SC-75, SOT-416	Obsolete
BFP181E7764HTSA1	Infineon	12V	8GHz	175mW	20mA	70 @ 70mA, 8V	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	150°C	TO-253-4, SOT-143	Active
BFP420H6801XTSA1	Infineon	5V	25GHz	160mW	35mA	60 @ 20mA, 4V	1.1dB @ 1.8GHz	150°C	SC-82A, SOT-343	Active
BFP420H6327XTSA1	Infineon	5V	25GHz	160mW	35mA	60 @ 20mA, 4V	1.1dB @ 1.8GHz	150°C	SC-82A, SOT-343	Active
BFP405H6327XTSA1	Infineon	5V	25GHz	75mW	25mA	60 @ 5mA, 4V	1.25dB @ 1.8GHz	150°C	SC-82A, SOT-343	Active
BF888H6327XTSA1	Infineon	4V	47GHz	160mW	30mA	250 @ 25A, 3V	0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz	150°C	SC-82A, SOT-343	Active
BFR106E6327HTSA1	Infineon	15V	5GHz	700mW	210mA	70 @ 70mA, 8V	1.8dB ~ 3dB @ 900MHz ~ 1.8GHz	150°C	TO-236-3, SOT-23-3	Active
BFR360FH6327XTSA1	Infineon	9V	14GHz	210mW	35mA	90 @ 15mA, 3V	1dB @ 1.8GHz	150°C	SOT-723	Active
BFP840ESDH6327XTSA1	Infineon	2.25V	80GHz	75mW	35mA	150 @ 10mA, 1.8V	0.85dB @ 5.5GHz	150°C	SC-82A, SOT-343	Active
BFR840L3RHESDE6327XTSA1	Infineon	2.6V	75GHz	75mW	35mA	150 @ 10mA, 1.8V	0.5dB @ 450MHz	150°C	SC-101, SOT-883	Active
MT3S111TU,LF	Toshiba	6V	10GHz	800mW	100mA	200 @ 30mA, 5V	0.6dB ~ 0.85dB @ 500MHz ~ 1GHz	150°C	3-SMD, Flat Lead	Active

Engineering Selection Recommendations

For Direct Replacement with Maintained 12V Specification:

BFP181E7764HTSA1 (Infineon Technologies) is the primary substitute for applications requiring 12V collector-emitter breakdown voltage. This part exceeds the 2SC5086-O,LF in frequency capability (8GHz vs. 7GHz) and power dissipation (175mW vs. 100mW). The device is ROHS3 compliant and REACH unaffected, with active product status and higher operating temperature rating (150°C vs. 125°C). Package change from SC-75 (SSM) to TO-253-4 (SOT-143) requires PCB layout modification.

For Reduced Voltage Applications with Enhanced Frequency Performance:

BFP420H6801XTSA1 and BFP420H6327XTSA1 (Infineon Technologies) provide 25GHz frequency capability at 5V operation. Both variants are functionally identical with 160mW power dissipation and 35mA maximum collector current. These parts are suitable for applications where 12V is not required and higher frequency performance is beneficial. ROHS3 compliance and REACH unaffected status are confirmed. Package is SC-82A (SOT-343), requiring PCB redesign.

For Higher Voltage Applications:

BFR106E6327HTSA1 (Infineon Technologies) operates at 15V with 5GHz frequency and 700mW power dissipation. This part accommodates higher voltage systems and provides significantly increased power handling capability. ROHS3 compliant and REACH unaffected. Package is TO-236-3 (SOT-23-3).

For Ultra-High Frequency Applications:

BFP840ESDH6327XTSA1 and BFR840L3RHESDE6327XTSA1 (Infineon Technologies) provide 80GHz and 75GHz frequency capability respectively, suitable for millimeter-wave applications. Both operate at reduced voltages (2.25V and 2.6V) and require careful circuit design consideration. ROHS3 compliant and REACH unaffected.

For Toshiba Continuity:

MT3S111TU,LF (Toshiba Semiconductor and Storage) maintains manufacturer continuity with active product status. This part operates at 6V with 10GHz frequency and 800mW power dissipation, providing enhanced performance over the obsolete 2SC5086-O,LF. ROHS3 compliant and REACH unaffected. Package is 3-SMD Flat Lead, requiring PCB layout modification.

All substitute parts listed maintain NPN transistor type, surface mount configuration, MSL 1 moisture sensitivity level, and RoHS/REACH compliance status required for modern production environments.

Frequently Asked Questions (FAQ)

Q: Can BFP181E7764HTSA1 directly replace 2SC5086-O,LF without circuit modification?

A: BFP181E7764HTSA1 maintains the 12V collector-emitter breakdown voltage and exceeds the 7GHz frequency requirement with 8GHz capability. However, the package changes from SC-75 (SSM) to TO-253-4 (SOT-143), requiring PCB footprint redesign. Electrical parameters are compatible for direct functional substitution once layout is modified.

Q: What is the primary difference between BFP420H6801XTSA1 and BFP420H6327XTSA1?

A: Both parts are functionally identical with identical electrical specifications. The difference is in packaging format: BFP420H6801XTSA1 is supplied in Tape & Reel (TR), while BFP420H6327XTSA1 is supplied in Cut Tape (CT) & Digi-Reel®. Selection depends on procurement and assembly requirements.

Q: Why do some substitute parts have lower voltage ratings than the 2SC5086-O,LF?

A: Lower voltage substitutes (5V, 4V, 2.25V) are provided for applications where the 12V specification is not required. These parts offer significantly higher frequency capability (25GHz to 80GHz) and improved noise figure performance, making them suitable for higher-frequency RF designs. Circuit voltage requirements must be verified before selection.

Q: Is package compatibility critical when selecting a substitute?

A: Yes. The 2SC5086-O,LF uses SC-75 (SOT-416) package. Substitute parts use different packages including TO-253-4 (SOT-143), SC-82A (SOT-343), TO-236-3 (SOT-23-3), SOT-723, and SC-101 (SOT-883). PCB footprint, trace routing, and thermal management must be re-evaluated for each package change.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component manufacturing and distribution.

Q: What is the significance of the noise figure parameter in RF transistor selection?

A: Noise figure indicates the transistor's contribution to system noise at specified frequencies. Lower noise figure values indicate better performance. The 2SC5086-O,LF specifies 1dB @ 500MHz. Substitute parts provide comparable or improved noise figure performance across their operating frequency ranges, supporting low-noise RF applications.

Q: Can BFR106E6327HTSA1 be used in place of 2SC5086-O,LF?

A: BFR106E6327HTSA1 operates at 15V (higher than 12V requirement) and 5GHz (lower than 7GHz requirement). This part is suitable only for applications where lower frequency operation is acceptable and higher voltage capability is beneficial. It is not a direct substitute for 7GHz RF applications.

Q: What does MSL 1 (Unlimited) moisture sensitivity level mean?

A: MSL 1 indicates the component has unlimited shelf life and does not require special moisture-control handling during storage and assembly. All substitute parts maintain MSL 1 rating, ensuring compatibility with standard manufacturing processes.

Q: How should I verify compatibility before committing to a substitute part?

A: Verify the following: (1) Collector-emitter breakdown voltage meets or exceeds circuit requirements, (2) Transition frequency supports the intended RF application, (3) Maximum power dissipation accommodates circuit conditions, (4) Maximum collector current supports bias and signal requirements, (5) Package footprint is compatible with PCB design or redesign is feasible, (6) DC current gain (hFE) meets bias network requirements.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message