2SC5066-O,LF Equivalent & Substitute Parts

Part Overview

The 2SC5066-O,LF is an RF transistor NPN manufactured by Toshiba Semiconductor and Storage, rated for 12V collector-emitter breakdown voltage with a 7GHz transition frequency and 100mW maximum power dissipation in a surface mount SSM package. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The part is RoHS compliant with unlimited moisture sensitivity level (MSL 1).

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	12V	V
Frequency - Transition	7GHz	GHz
Power - Max	100mW	mW
Current - Collector (Ic) (Max)	30mA	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	—
Noise Figure (dB Typ @ f)	1dB @ 500MHz	dB
Operating Temperature (Max)	125°C	°C
Mounting Type	Surface Mount	—
Package / Case	SC-75, SOT-416	—
RoHS Status	RoHS Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2SC5066-O,LF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN (required)
Voltage - Collector Emitter Breakdown (Max): 12V or higher (required for voltage compatibility)
Frequency - Transition: 7GHz or higher (required for RF performance)
Power - Max: 100mW or higher (required for power handling)
Current - Collector (Ic) (Max): 30mA or higher (required for current capacity)
Mounting Type: Surface Mount (required for PCB compatibility)

Secondary Compatibility Factors:

DC Current Gain (hFE): Minimum 80 at specified conditions
Noise Figure: 1dB or lower at 500MHz or comparable frequency
Operating Temperature: 125°C or higher
RoHS Compliance: Required for regulatory alignment
Moisture Sensitivity Level: MSL 1 preferred

Substitute parts are grouped into two categories based on their electrical performance relative to the main part:

Category A - Direct Equivalents (12V Rating, 7-8GHz Range): Parts meeting or closely matching the 12V voltage rating and 7-8GHz frequency range with comparable power and current specifications.

Category B - Higher Performance Alternatives (12V Rating, Higher Frequency): Parts exceeding the 12V voltage rating or offering higher frequency capability while maintaining surface mount packaging and RF transistor functionality.

Category C - Specialized High-Frequency Alternatives: Parts with lower voltage ratings but significantly higher frequency capability (25GHz and above), suitable for applications where frequency performance is prioritized over voltage headroom.

Parameter Comparison

Part Number	Manufacturer	Vce (Max) [V]	Frequency [GHz]	Power (Max) [mW]	Ic (Max) [mA]	hFE (Min)	Noise Figure [dB]	Package	Mounting	Status
2SC5066-O,LF	Toshiba	12	7	100	30	80	1 @ 500MHz	SC-75, SOT-416	Surface Mount	Obsolete
BFP193WH6327XTSA1	Infineon	12	8	580	80	70	1 ~ 1.6 @ 900MHz ~ 1.8GHz	SC-82A, SOT-343	Surface Mount	Active
BFP196E6327HTSA1	Infineon	12	7.5	700	150	70	1.3 ~ 2.3 @ 900MHz ~ 1.8GHz	TO-253-4, TO-253AA	Surface Mount	Active
BFP420FH6327XTSA1	Infineon	5.5	25	160	35	60	1.1 @ 1.8GHz	4-SMD, Flat Leads	Surface Mount	Active
BFP420H6327XTSA1	Infineon	5	25	160	35	60	1.1 @ 1.8GHz	SC-82A, SOT-343	Surface Mount	Active
BFP620FH7764XTSA1	Infineon	2.8	65	185	80	110	0.7 ~ 1.3 @ 1.8GHz ~ 6GHz	4-SMD, Flat Leads	Surface Mount	Active
BFP720ESDH6327XTSA1	Infineon	4.7	43	100	30	160	0.55 ~ 1.55 @ 150MHz ~ 10GHz	SC-82A, SOT-343	Surface Mount	Active
BFP720FH6327XTSA1	Infineon	4.7	45	100	25	160	0.4 ~ 1 @ 150MHz ~ 10GHz	4-SMD, Flat Leads	Surface Mount	Active
BFP840FESDH6327XTSA1	Infineon	2.6	85	75	35	150	0.75 @ 5.5GHz	4-SMD, Flat Leads	Surface Mount	Active
MT3S111TU,LF	Toshiba	6	10	800	100	200	0.6 ~ 0.85 @ 500MHz ~ 1GHz	3-SMD, Flat Lead	Surface Mount	Active
2N918 PBFREE	Central Semiconductor	15	0.6	200	50	20	6 @ 60kHz	TO-206AF, TO-72-4	Through Hole	Active

Engineering Selection Recommendations

For Direct Voltage and Frequency Compatibility (12V, 7-8GHz Range):

BFP193WH6327XTSA1 and BFP196E6327HTSA1 are the primary active substitutes for the 2SC5066-O,LF. Both are manufactured by Infineon Technologies and maintain the 12V collector-emitter breakdown voltage rating. BFP193WH6327XTSA1 operates at 8GHz with 580mW power capability, exceeding the original part's 100mW specification. BFP196E6327HTSA1 operates at 7.5GHz with 700mW power capability. Both parts are ROHS3 compliant and carry REACH Unaffected status, providing regulatory alignment superior to the obsolete original part. Both are in active production with substantial inventory availability.

For Applications Requiring Voltage Headroom Preservation:

The 2N918 PBFREE from Central Semiconductor Corp provides a 15V collector-emitter breakdown voltage rating, offering additional voltage margin. However, this part operates at 600MHz transition frequency and uses through-hole TO-72 packaging, making it unsuitable for direct PCB replacement in surface mount applications. This option is applicable only for redesigned circuits with through-hole capability.

For High-Frequency Applications (25GHz and Above):

BFP420FH6327XTSA1, BFP420H6327XTSA1, BFP620FH7764XTSA1, BFP720ESDH6327XTSA1, BFP720FH6327XTSA1, and BFP840FESDH6327XTSA1 provide significantly higher frequency performance (25GHz to 85GHz). These parts operate at reduced voltage ratings (2.6V to 5.5V) and are suitable only for applications where the original 12V voltage specification is not required. All are Infineon Technologies products in active production with ROHS3 compliance and REACH Unaffected status.

For Toshiba Ecosystem Continuity:

MT3S111TU,LF is an active Toshiba product offering 10GHz frequency capability with 800mW power handling. The 6V collector-emitter breakdown voltage is lower than the original 12V specification, requiring circuit redesign for voltage compatibility. This part is ROHS3 compliant and available in active production.

Compliance and Production Status:

All recommended active substitutes carry ROHS3 compliance and REACH Unaffected status, providing superior regulatory alignment compared to the obsolete 2SC5066-O,LF. All active substitutes are in current production with documented inventory availability, ensuring supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can BFP193WH6327XTSA1 directly replace the 2SC5066-O,LF in existing PCB designs?

A: BFP193WH6327XTSA1 maintains the 12V collector-emitter breakdown voltage and operates at 8GHz, exceeding the original 7GHz specification. However, the package differs: BFP193WH6327XTSA1 uses SC-82A SOT-343 while the original uses SC-75 SOT-416. PCB layout modification is required. Electrical performance is compatible for RF applications operating within the 12V specification.

Q: What is the primary difference between BFP193WH6327XTSA1 and BFP196E6327HTSA1?

A: Both maintain 12V voltage rating and are Infineon active products. BFP193WH6327XTSA1 operates at 8GHz with 580mW power and uses SOT-343 packaging. BFP196E6327HTSA1 operates at 7.5GHz with 700mW power and uses TO-253-4 packaging. BFP196E6327HTSA1 provides higher power capability and larger current handling (150mA vs. 80mA).

Q: Why do the high-frequency alternatives (BFP420, BFP620, BFP720, BFP840 series) have lower voltage ratings?

A: High-frequency RF transistors operate with reduced voltage ratings due to fundamental semiconductor physics constraints. Frequency performance and voltage rating are inversely related in bipolar transistor design. These parts are suitable only for applications where the circuit design can accommodate 2.6V to 5.5V operation instead of the original 12V specification.

Q: Is the 2N918 PBFREE a viable substitute for the 2SC5066-O,LF?

A: The 2N918 PBFREE provides higher voltage rating (15V) but operates at only 600MHz transition frequency, significantly below the original 7GHz specification. Additionally, it uses through-hole TO-72 packaging instead of surface mount. This part is not suitable for direct replacement in existing surface mount RF designs operating at 7GHz.

Q: What packaging considerations apply when selecting a substitute?

A: The original 2SC5066-O,LF uses SC-75 SOT-416 surface mount packaging. BFP193WH6327XTSA1 uses SC-82A SOT-343, and BFP196E6327HTSA1 uses TO-253-4. All are surface mount packages but with different footprints. PCB layout redesign is required for any substitute. The 2N918 PBFREE uses through-hole TO-72 packaging and cannot be used in surface mount applications without circuit board redesign.

Q: Are all active substitutes RoHS compliant?

A: All active substitute parts listed carry ROHS3 compliance. The original 2SC5066-O,LF carries RoHS Compliant status. All active substitutes also carry REACH Unaffected status, providing regulatory alignment for current production requirements.

Q: What is the moisture sensitivity level (MSL) for the substitute parts?

A: All substitute parts listed carry MSL 1 (Unlimited), matching the original 2SC5066-O,LF specification. This indicates no moisture sensitivity restrictions for storage and handling.

Q: Which substitute offers the closest electrical match to the 2SC5066-O,LF?

A: BFP193WH6327XTSA1 provides the closest electrical match, maintaining the 12V collector-emitter breakdown voltage and operating at 8GHz, which exceeds the original 7GHz specification. Power capability (580mW) significantly exceeds the original 100mW specification. This part is recommended for applications requiring voltage and frequency compatibility with the original design.

Q: Can multiple substitutes be used interchangeably in the same design?

A: No. Each substitute has distinct electrical characteristics, package footprints, and pin configurations. Selection must be based on specific application requirements for voltage, frequency, power, and current handling. Circuit redesign may be required for package changes.

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