2SC4915-O,LF Equivalent & Substitute Parts

Part Overview

The 2SC4915-O,LF is an RF transistor manufactured by Toshiba Semiconductor and Storage, classified as a bipolar NPN transistor designed for radio frequency applications. This surface mount device operates at 550MHz transition frequency with a maximum collector-emitter breakdown voltage of 30V and maximum power dissipation of 100mW. The part is currently in active product status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1). Equivalent and substitute parts are identified to support design flexibility, inventory management, and supply chain continuity for RF circuit applications requiring comparable electrical and mechanical characteristics.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	-
Voltage - Collector Emitter Breakdown (Max)	30	V
Frequency - Transition	550	MHz
Power - Max	100	mW
Current - Collector (Ic) (Max)	20	mA
DC Current Gain (hFE) (Min)	70	@ 1mA, 6V
Operating Temperature (Max)	125	°C
Mounting Type	Surface Mount	-
Package / Case	SC-75, SOT-416	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the 2SC4915-O,LF is determined by electrical compatibility across the following critical parameters: transistor type (NPN), maximum collector-emitter breakdown voltage, transition frequency capability, maximum power dissipation, maximum collector current, and DC current gain characteristics. Mechanical compatibility is assessed through mounting type (surface mount) and package form factor. All identified substitute parts maintain NPN transistor topology and surface mount configuration. Substitutes are grouped based on voltage rating compatibility and frequency performance relative to the main part's 30V, 550MHz specification. Parts with lower voltage ratings (4.5V to 12V) are suitable for applications where the 30V rating is not required. Parts with higher frequency capability (8GHz to 46GHz) provide extended frequency margin for RF applications. The MRF428, while listed as a substitute, operates at significantly different electrical parameters (55V, 20A, 150W, chassis mount) and represents a substitute for high-power applications only.

Parameter Comparison

Parameter	2SC4915-O,LF	BFP193WH6327XTSA1	BF776H6327XTSA1	BFP640FH6327XTSA1	BFR182WH6327XTSA1	BFR340L3E6327XTMA1	MRF428
Manufacturer	Toshiba	Infineon	Infineon	Infineon	Infineon	Infineon	MACOM
Transistor Type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	30V	12V	4.7V	4.5V	12V	9V	55V
Frequency - Transition	550MHz	8GHz	46GHz	40GHz	8GHz	14GHz	-
Power - Max	100mW	580mW	200mW	200mW	250mW	60mW	150W
Current - Collector (Ic) (Max)	20mA	80mA	50mA	50mA	35mA	10mA	20A
DC Current Gain (hFE) (Min)	70 @ 1mA, 6V	70 @ 30mA, 8V	180 @ 30mA, 3V	110 @ 30mA, 3V	70 @ 10mA, 8V	90 @ 5mA, 3V	10 @ 5A, 5V
Operating Temperature (Max)	125°C	150°C	150°C	150°C	150°C	150°C	-
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Chassis Mount
Package / Case	SC-75, SOT-416	SC-82A, SOT-343	SC-82A, SOT-343	4-SMD, Flat Leads	SC-70, SOT-323	SC-101, SOT-883	211-11, Style 2
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

All identified substitute parts maintain active product status and RoHS3 compliance, ensuring regulatory alignment with the 2SC4915-O,LF. Selection of substitute parts depends on application-specific voltage and frequency requirements.

BFP193WH6327XTSA1 (Infineon) operates at 12V maximum collector-emitter breakdown voltage with 8GHz transition frequency. This part is suitable for applications operating below 12V where the 30V rating of the 2SC4915-O,LF is not required. The higher power dissipation (580mW) and collector current capability (80mA) provide additional design margin.

BF776H6327XTSA1 (Infineon) operates at 4.7V maximum collector-emitter breakdown voltage with 46GHz transition frequency. This part is applicable only to low-voltage RF applications and provides significantly extended frequency performance.

BFP640FH6327XTSA1 (Infineon) operates at 4.5V maximum collector-emitter breakdown voltage with 40GHz transition frequency. Similar to BF776H6327XTSA1, this part is restricted to low-voltage applications with extended frequency requirements.

BFR182WH6327XTSA1 (Infineon) operates at 12V maximum collector-emitter breakdown voltage with 8GHz transition frequency in a smaller SC-70 package. This part provides equivalent voltage and frequency performance to BFP193WH6327XTSA1 with reduced package footprint.

BFR340L3E6327XTMA1 (Infineon) operates at 9V maximum collector-emitter breakdown voltage with 14GHz transition frequency in a miniature SC-101 package. This part is suitable for applications requiring moderate voltage and frequency performance with minimal board space.

MRF428 (MACOM) operates at 55V maximum collector-emitter breakdown voltage with 150W power dissipation in a chassis mount configuration. This part is applicable only to high-power RF applications and is not suitable for direct replacement in surface mount circuit designs.

Frequently Asked Questions (FAQ)

Q: Can BFP193WH6327XTSA1 directly replace 2SC4915-O,LF in all applications?

A: BFP193WH6327XTSA1 is suitable for applications where the circuit operates at or below 12V collector-emitter voltage. If the application requires the full 30V rating of the 2SC4915-O,LF, this substitute is not appropriate. Both parts are surface mount NPN transistors with compatible mounting type, but package form factors differ (SOT-343 versus SOT-416).

Q: What is the primary difference between BF776H6327XTSA1 and BFP640FH6327XTSA1?

A: Both parts operate at similar low voltage ratings (4.7V and 4.5V respectively) and high transition frequencies (46GHz and 40GHz). The primary differences are transition frequency capability and package configuration (SOT-343 versus 4-TSFP flat leads). Selection depends on frequency margin requirements and PCB layout constraints.

Q: Is MRF428 suitable for surface mount applications?

A: No. MRF428 is a chassis mount device with a 211-11 package configuration, whereas the 2SC4915-O,LF is a surface mount component. MRF428 is applicable only to discrete high-power RF amplifier designs requiring 55V operation and 150W power dissipation.

Q: What packaging considerations apply when substituting BFR340L3E6327XTMA1?

A: BFR340L3E6327XTMA1 uses a SC-101 (SOT-883) package, which is significantly smaller than the SC-75 (SOT-416) package of the 2SC4915-O,LF. PCB layout modifications are required to accommodate the different footprint. Pin configuration and lead spacing must be verified against the specific application circuit design.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All identified substitute parts maintain RoHS3 compliance and unlimited moisture sensitivity level (MSL 1), matching the environmental and regulatory status of the 2SC4915-O,LF.

Q: Which substitute part provides the closest electrical match to 2SC4915-O,LF?

A: BFR340L3E6327XTMA1 provides the closest electrical match with 9V maximum collector-emitter breakdown voltage and 14GHz transition frequency, representing a moderate voltage and frequency profile. However, this part operates at lower maximum power (60mW) and collector current (10mA) compared to the 2SC4915-O,LF specifications.

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