2SC4793,HFEF(J Equivalent & Substitute Parts

Part Overview

The 2SC4793,HFEF(J is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, designed for through-hole applications in the TO-220-3 package. This component operates at maximum ratings of 230 V collector-emitter breakdown voltage and 1 A maximum collector current, with a maximum power dissipation of 2 W. The device is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. Substitute parts must maintain functional compatibility across critical electrical parameters while accommodating modern supply chain availability.

Substiute Parts

2SC4793,HFEF(J

Toshiba Semiconductor and StorageIn Stock: 8982SC4793,HFEF(J Datasheet

Current PartRFQ

TTC011B,Q(S

Toshiba Semiconductor and StorageIn Stock: 1165TTC011B,Q(S Datasheet

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MJF47G

onsemiIn Stock: 1123MJF47G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the 2SC4793,HFEF(J is determined by the following critical parameters:

Primary Electrical Criteria:

• Transistor type must be NPN
• Voltage - Collector Emitter Breakdown (Max) must be ≥ 230 V
• Current - Collector (Ic) (Max) must be ≥ 1 A
• Power - Max must be ≥ 2 W
• Mounting type must be Through Hole
• Package must be TO-220-3 compatible

Secondary Considerations:

• Frequency - Transition capability
• Operating temperature range
• Product status and availability
• RoHS and regulatory compliance

The identified substitute parts meet or exceed the primary electrical criteria while maintaining package compatibility. Variations in secondary parameters reflect differences in manufacturing technology and design specifications between manufacturers.

Parameter Comparison

Engineering Selection Recommendations

MJF47G (onsemi) is the primary substitute for the 2SC4793,HFEF(J). This part maintains identical maximum collector current (1 A) and power dissipation (2 W) specifications. The MJF47G exceeds the voltage requirement with a 250 V collector-emitter breakdown rating compared to 230 V. Both devices utilize the TO-220-3 package for direct mechanical compatibility. The MJF47G is classified as active with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The transition frequency of 10 MHz is lower than the original 100 MHz specification; this difference is acceptable for applications not requiring high-frequency performance.

TTC011B,Q(S (Toshiba) is an alternative substitute from the same manufacturer as the original part. This device is active and RoHS compliant. However, the TTC011B,Q(S uses a TO-126 package, which differs from the TO-220-3 package of the original part. This package difference requires mechanical redesign of the circuit board layout and thermal management approach. Complete electrical specifications for the TTC011B,Q(S are not provided in the available data; therefore, parameter verification against application requirements is necessary before selection.

For applications requiring direct mechanical and thermal compatibility without redesign, MJF47G is the recommended substitute. For applications where package change is acceptable, TTC011B,Q(S provides an alternative from the original manufacturer.

Frequently Asked Questions (FAQ)

Q: Can the MJF47G directly replace the 2SC4793,HFEF(J) without circuit board modifications?

A: Yes. Both devices use the TO-220-3 package with identical pin configuration and mounting requirements. No circuit board layout changes are necessary for mechanical compatibility.

Q: What is the significance of the 100 MHz versus 10 MHz transition frequency difference between the original and MJF47G?

A: Transition frequency indicates the maximum frequency at which the transistor maintains useful gain. The original 2SC4793,HFEF(J) operates at 100 MHz, while the MJF47G operates at 10 MHz. For DC and low-frequency applications below 10 MHz, this difference is not functionally significant. Applications requiring operation above 10 MHz must verify that the MJF47G meets specific frequency performance requirements.

Q: Why is the TTC011B,Q(S listed as a substitute if it uses a different package?

A: The TTC011B,Q(S meets the core electrical criteria (NPN type, through-hole mounting, active product status). However, the TO-126 package differs from the TO-220-3 package of the original part. This substitute is applicable only when circuit board redesign is feasible or when thermal and spatial constraints permit the smaller TO-126 package.

Q: What does ROHS3 compliance mean for the MJF47G?

A: ROHS3 compliance indicates the device meets the Restriction of Hazardous Substances Directive requirements, restricting specific hazardous materials in electrical and electronic equipment. This certification ensures regulatory compliance for applications in regions with RoHS requirements.

Q: Are there electrical parameter differences that would affect circuit performance?

A: The MJF47G has a higher collector-emitter breakdown voltage (250 V versus 230 V), which provides additional voltage margin. The Vce saturation characteristics differ: the original specifies 1.5 V at 50 mA/500 mA, while the MJF47G specifies 1 V at 200 mA/1 A. These differences may affect switching speed and power dissipation in saturation-mode applications. Circuit simulation or testing is appropriate for applications sensitive to saturation characteristics.

Q: Is the 2SC4793,HFEF(J still available for purchase?

A: The 2SC4793,HFEF(J is classified as obsolete. While inventory may exist in distribution channels, long-term availability is not guaranteed. Active substitute parts such as the MJF47G are recommended for new designs and ongoing production to ensure supply chain continuity.