2SC4604,T6F(J Equivalent & Substitute Parts

Part Overview

The 2SC4604,T6F(J is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 3 A, collector-emitter breakdown voltage of 50 V, and maximum power dissipation of 900 mW in a through-hole TO-92MOD package.

The 2SC4604,T6F(J is classified as obsolete. Locating equivalent substitute parts is necessary to support ongoing maintenance, repair, and production requirements for legacy equipment and systems utilizing this component. Substitute parts must maintain electrical compatibility while accommodating potential packaging and mounting differences.

Substiute Parts

2SC4604,T6F(J

Toshiba Semiconductor and StorageIn Stock: 10232SC4604,T6F(J Datasheet

Current PartRFQ

2SC5712(TE12L,F)

Toshiba Semiconductor and StorageIn Stock: 20572SC5712(TE12L,F) Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SC4604,T6F(J is determined by strict electrical parameter matching across the following criteria:

Electrical Compatibility Requirements:

• Transistor type must be NPN
• Maximum collector current (Ic) must be ≥ 3 A
• Collector-emitter breakdown voltage (VCEO) must be ≥ 50 V
• Maximum power dissipation must be ≥ 900 mW
• Operating temperature range must support 150°C (TJ)
• Current-collector cutoff (ICBO) must be ≤ 100 nA

Mechanical Compatibility Considerations:

• Mounting type and package configuration may differ from the original through-hole TO-92MOD
• Pin configuration and lead spacing must be verified for circuit board layout compatibility
• Thermal characteristics must be evaluated for the specific application environment

The 2SC5712(TE12L,F) meets all electrical parameter requirements for substitution. However, this substitute employs surface-mount technology (PW-MINI package) rather than through-hole mounting, requiring circuit board redesign or adapter solutions for direct replacement in legacy applications.

Parameter Comparison

Engineering Selection Recommendations

2SC5712(TE12L,F) as Substitute:

The 2SC5712(TE12L,F) satisfies all mandatory electrical parameters for substitution. This device is manufactured by Toshiba Semiconductor and Storage and maintains active product status, ensuring ongoing availability and supply chain reliability.

The 2SC5712(TE12L,F) provides superior electrical performance characteristics compared to the 2SC4604,T6F(J), including higher DC current gain (hFE of 400 versus 120) and lower saturation voltage (140 mV versus 500 mV), resulting in improved switching efficiency and reduced power dissipation in typical applications.

The 2SC5712(TE12L,F) is RoHS3 compliant, supporting modern manufacturing and environmental standards. Moisture sensitivity level (MSL) is rated at 1 (Unlimited) for both devices, indicating equivalent handling requirements.

Critical Implementation Consideration:

The primary distinction between these devices is the mounting technology. The 2SC4604,T6F(J) utilizes through-hole TO-92MOD packaging, while the 2SC5712(TE12L,F) employs surface-mount PW-MINI (TO-243AA) packaging. Direct board-level substitution requires either circuit board redesign to accommodate surface-mount footprints or implementation of mechanical adapter solutions for through-hole mounting compatibility.

Frequently Asked Questions (FAQ)

Q: Can the 2SC5712(TE12L,F) directly replace the 2SC4604,T6F(J) in existing circuit boards?

A: Electrical substitution is valid. However, direct physical replacement is not possible without circuit board modification. The 2SC4604,T6F(J) uses through-hole TO-92MOD packaging with vertical lead configuration, while the 2SC5712(TE12L,F) uses surface-mount PW-MINI packaging. Circuit board redesign or mechanical adapter implementation is required.

Q: What are the key electrical parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: NPN transistor type, maximum collector current ≥ 3 A, collector-emitter breakdown voltage ≥ 50 V, maximum power dissipation ≥ 900 mW, operating temperature support to 150°C (TJ), and collector cutoff current ≤ 100 nA. The 2SC5712(TE12L,F) meets all these requirements.

Q: Does the 2SC5712(TE12L,F) offer performance advantages over the 2SC4604,T6F(J)?

A: Yes. The 2SC5712(TE12L,F) provides higher DC current gain (400 versus 120 at specified test conditions) and significantly lower saturation voltage (140 mV versus 500 mV), resulting in improved switching performance and reduced power dissipation. Maximum power rating is also higher (1 W versus 900 mW).

Q: What is the product status difference between these devices?

A: The 2SC4604,T6F(J) is classified as obsolete, indicating discontinued manufacturing and limited availability. The 2SC5712(TE12L,F) maintains active product status with ongoing manufacturing and supply chain support from Toshiba Semiconductor and Storage.

Q: Are there moisture sensitivity or environmental compliance differences?

A: Both devices share identical moisture sensitivity level (MSL 1 - Unlimited). The 2SC5712(TE12L,F) is RoHS3 compliant, supporting modern environmental and manufacturing standards. Compliance status for the 2SC4604,T6F(J) is not specified in available documentation.

Q: What inventory considerations apply to these parts?

A: The 2SC4604,T6F(J) has 979 pieces available as new original stock. The 2SC5712(TE12L,F) has 2000 pieces available in cut tape and Digi-Reel packaging formats. The substitute part offers superior supply availability and active product support.