2SC4468 Equivalent & Substitute Parts Engineering Reference

Part Overview

The Sanken Electric USA Inc. 2SC4468 is an NPN bipolar junction transistor (BJT) designed for high-voltage, high-current switching and amplification applications. It features a collector-emitter breakdown voltage of 140 V, a maximum collector current of 10 A, and a 100 W maximum power rating, encapsulated in a TO-3P through-hole package. The product status is “Active”. Finding alternative models or substitute transistors is essential for design flexibility, maintaining supply chain continuity, or addressing situations where the 2SC4468 is unavailable or has inventory limitations.

Substiute Parts

2SC4468

Sanken Electric USA Inc.In Stock: 23092SC4468 Datasheet

Current PartRFQ

2SD1047

STMicroelectronicsIn Stock: 16212SD1047 Datasheet

SimilarRFQ

TIP35CP

STMicroelectronicsIn Stock: 1707TIP35CP Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute transistors for the 2SC4468 are grouped strictly based on matching the following parameters:

• Transistor Type (NPN)
• Voltage - Collector Emitter Breakdown (Max)
• Current - Collector (Ic) (Max)
• Power - Max
• Frequency - Transition
• DC Current Gain (hFE) (Min) at specified Ic, Vce
• Vce Saturation (Max) at specified Ib, Ic
• Operating Temperature
• Package / Case (TO-3P-3, SC-65-3)
• RoHS Status
• Moisture Sensitivity Level (MSL) Substitutes listed possess parameter values that fit within these ranges or meet/exceed those of the 2SC4468, as outlined in the input.

Parameter Comparison

Engineering Selection Recommendations

Engineering selection among 2SC4468, 2SD1047, and TIP35CP should consider product status and regulatory compliance. All parts listed are RoHS3 compliant and at MSL 1, ensuring compatibility with RoHS-constrained and unlimited moisture-sensitive environments. The 2SC4468 and TIP35CP remain active products, while the 2SD1047 status is “Last Time Buy”. Inventory levels are above 1000 pieces for each part, suitable for ongoing procurement.

Frequently Asked Questions (FAQ)

Q1: What parameters are critical for substituting a bipolar (BJT) transistor like the 2SC4468?
A1: Key parameters for substitution are transistor type (NPN), collector-emitter breakdown voltage, maximum collector current, power rating, transition frequency, DC current gain (hFE) at specified test conditions, Vce(sat), collector cutoff current, package type, operating temperature, compliance, and MSL rating.

Q2: Is package or mounting compatibility required when selecting substitutes?
A2: Yes, all substitutes are provided in the TO-3P-3, SC-65-3 through-hole package, ensuring footprint and mechanical compatibility with the 2SC4468.

Q3: Can the higher or lower values in substitute parameters be used interchangeably?
A3: Only the parameters listed are considered; alternatives must fall within the relevant ranges for collector voltage, current, and power to be listed.

Q4: How does product status affect engineering selection?
A4: Preference should be given to parts with “Active” product status to support ongoing or new designs. “Last Time Buy” status indicates limited future availability for 2SD1047.