2SC4135S-TL-E Equivalent & Substitute Parts

Part Overview

The 2SC4135S-TL-E is an NPN bipolar junction transistor manufactured by onsemi, rated for 100V collector-emitter breakdown voltage and 2A maximum collector current. This surface mount device in TO-252-3 (DPAK) packaging is designed for general-purpose switching and amplification applications requiring 1W power dissipation capability.

The 2SC4135S-TL-E carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

2SC4135S-TL-E
onsemiIn Stock: 12282SC4135S-TL-E Datasheet
2SC4135S-TL-E
Current Part
2SD1980TL
Rohm SemiconductorIn Stock: 40952SD1980TL Datasheet
2SD1980TL
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MJD31C-13
Diodes IncorporatedIn Stock: 20136MJD31C-13 Datasheet
MJD31C-13
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MJD31CT4
onsemiIn Stock: 17079MJD31CT4 Datasheet
MJD31CT4
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MJD31CT4-A
STMicroelectronicsIn Stock: 15475MJD31CT4-A Datasheet
MJD31CT4-A
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) 400mV @ 100mA, 1A
DC Current Gain (hFE) Min 140 @ 100mA, 5V
Power - Max 1 W
Frequency - Transition 120 MHz
Operating Temperature (TJ) 150 °C
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the 2SC4135S-TL-E is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 100V minimum
  • Current - Collector (Ic) Max: 2A minimum
  • Package / Case: TO-252-3 (DPAK) surface mount
  • Mounting Type: Surface Mount

Allowable Parameter Variations:

  • Power dissipation may exceed 1W (higher power rating acceptable)
  • DC Current Gain (hFE) may exceed 140 (higher gain acceptable)
  • Frequency - Transition may differ from 120MHz (frequency not a limiting factor for general switching applications)
  • Vce Saturation may vary within acceptable switching performance ranges
  • Operating temperature range may extend beyond 150°C

The substitute parts identified below meet or exceed the mandatory matching criteria while maintaining electrical and mechanical compatibility with the 2SC4135S-TL-E.

Parameter Comparison

Parameter 2SC4135S-TL-E 2SD1980TL MJD31C-13 MJD31CT4 MJD31CT4-A
Manufacturer onsemi Rohm Semiconductor Diodes Incorporated onsemi STMicroelectronics
Transistor Type NPN NPN - Darlington NPN NPN NPN
Current - Collector (Ic) Max 2 A 2 A 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V
Vce Saturation (Max) 400mV @ 100mA, 1A 1.5V @ 1mA, 1A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A
DC Current Gain (hFE) Min 140 @ 100mA, 5V 1000 @ 1A, 2V 10 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V
Power - Max 1 W 10 W 1.56 W 15 W 15 W
Frequency - Transition 120 MHz 3 MHz 3 MHz
Operating Temperature (TJ) 150°C 150°C -55°C ~ 150°C -65°C ~ 150°C 150°C
Package / Case TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant RoHS non-compliant ROHS3 Compliant
Product Status Obsolete Not For New Designs Active Obsolete Active

Engineering Selection Recommendations

Primary Substitute: MJD31CT4-A

The MJD31CT4-A manufactured by STMicroelectronics is the recommended substitute for the 2SC4135S-TL-E. This part maintains full electrical compatibility with identical voltage and current ratings (100V, 3A), identical package configuration (TO-252-3 DPAK), and carries Active product status. The MJD31CT4-A is ROHS3 compliant and REACH unaffected, ensuring regulatory compliance for current and future production. The higher current rating (3A vs. 2A) and increased power dissipation (15W vs. 1W) provide design margin without requiring circuit modifications.

Secondary Substitute: MJD31C-13

The MJD31C-13 manufactured by Diodes Incorporated is an alternative substitute with Active product status. This part meets all mandatory electrical and mechanical compatibility requirements with 100V voltage rating, 3A current capability, and TO-252-3 DPAK packaging. The MJD31C-13 is ROHS3 compliant and offers extended operating temperature range (-55°C to 150°C). Higher power dissipation (1.56W) and increased current capacity support applications with elevated thermal or current demands.

Tertiary Substitute: 2SD1980TL

The 2SD1980TL manufactured by Rohm Semiconductor meets mandatory electrical and mechanical requirements with 100V voltage rating, 2A current matching, and identical TO-252-3 DPAK packaging. However, this part carries Not For New Designs product status and features Darlington transistor architecture with significantly higher DC current gain (1000 vs. 140) and elevated Vce saturation (1.5V vs. 400mV). The 2SD1980TL is suitable only for legacy design support where existing circuit topology depends on Darlington characteristics.

Not Recommended: MJD31CT4

The MJD31CT4 manufactured by onsemi carries Obsolete product status and RoHS non-compliant certification. While electrical parameters match substitute requirements, the obsolete status and non-compliance with current environmental regulations make this part unsuitable for new or ongoing production applications.

Frequently Asked Questions (FAQ)

Q: Can the MJD31CT4-A directly replace the 2SC4135S-TL-E without circuit modifications?

A: Yes. The MJD31CT4-A maintains identical voltage rating (100V), exceeds current rating (3A vs. 2A), uses identical TO-252-3 DPAK packaging, and shares NPN transistor architecture. The higher current and power ratings provide design margin. No circuit modifications are required for direct substitution in applications operating within the original 2SC4135S-TL-E specifications.

Q: What is the significance of the Darlington configuration in the 2SD1980TL?

A: The 2SD1980TL uses Darlington architecture, which combines two transistor stages internally. This results in extremely high DC current gain (1000 vs. 140 in the original part) and elevated Vce saturation voltage (1.5V vs. 400mV). Darlington substitution is appropriate only when existing circuit design specifically depends on these characteristics. For general-purpose switching applications, standard NPN substitutes (MJD31CT4-A or MJD31C-13) are preferred.

Q: Why do some substitute parts have higher power ratings than the original 2SC4135S-TL-E?

A: Higher power ratings (10W, 15W vs. 1W) indicate greater thermal dissipation capability and more robust die construction. These parts can operate safely in applications with higher power demands or thermal stress. Higher power rating does not create incompatibility; it provides additional design margin and reliability headroom for the same electrical operating point.

Q: Is RoHS compliance a critical factor in selecting a substitute?

A: RoHS compliance is mandatory for applications subject to environmental regulations in the European Union and equivalent jurisdictions. The MJD31CT4-A and MJD31C-13 are both ROHS3 compliant, making them suitable for regulated markets. The MJD31CT4 is RoHS non-compliant and should not be selected for new production or applications requiring regulatory compliance documentation.

Q: Can the MJD31C-13 be used in applications requiring extended temperature operation?

A: Yes. The MJD31C-13 offers operating temperature range from -55°C to 150°C, compared to 150°C maximum for the 2SC4135S-TL-E. This extended range supports applications requiring low-temperature operation or thermal cycling. The electrical parameters remain consistent across the full temperature range.

Q: What is the practical difference between 120MHz and 3MHz transition frequency?

A: Transition frequency indicates the frequency at which current gain drops to unity. The 2SC4135S-TL-E at 120MHz supports higher-frequency switching applications. Substitute parts with 3MHz transition frequency are suitable for general-purpose switching and low-frequency amplification. For applications requiring switching frequencies above 3MHz, verify that the substitute part's transition frequency meets circuit requirements.

Q: Are there inventory or supply considerations when selecting a substitute?

A: Inventory levels provided in the input data reflect availability at the time of documentation. The MJD31CT4-A (15,408 pcs) and MJD31C-13 (20,100 pcs) show higher stock levels than the obsolete 2SC4135S-TL-E (1,214 pcs), supporting long-term supply chain continuity. Current availability should be verified with component distributors for production planning.

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