2SC4134T-TL-E Equivalent & Substitute Parts

Part Overview

The 2SC4134T-TL-E is an NPN bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 1 A maximum collector current. This surface mount device operates at a transition frequency of 120 MHz with a maximum power dissipation of 800 mW in a TO-252-3 DPAK package. The part is currently active in production and RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges, or when higher-rated alternatives provide functional compatibility for the intended application circuit.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	100	V
Current - Collector (Ic) (Max)	1	A
Power - Max	800	mW
Frequency - Transition	120	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	400mV @ 40mA, 400mA	—
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Mounting Type	Surface Mount	—
Operating Temperature (Max)	150	°C (TJ)

Substitute Part Grouping Explanation

Substitution logic for the 2SC4134T-TL-E is based on the following critical parameters:

Primary Substitution Criteria:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 100 V minimum
Package / Case: TO-252-3 DPAK surface mount
Mounting Type: Surface Mount

Secondary Compatibility Factors:

Current - Collector (Ic) (Max): Equal to or greater than 1 A
Power - Max: Equal to or greater than 800 mW
DC Current Gain (hFE): Minimum 200 @ 100mA, 5V or equivalent specification
Operating Temperature: 150°C maximum junction temperature

Substitute parts are grouped into two categories:

Category A - Direct Equivalents (Same Current Rating): Parts with 1 A to 2 A collector current ratings that maintain the 100 V breakdown voltage and DPAK package specification.

Category B - Higher Current Alternatives (Uprated Current): Parts with 3 A collector current ratings that exceed the original specification but maintain 100 V breakdown voltage and DPAK package compatibility. These parts are suitable for applications where higher current capacity provides design margin or future scalability.

Parameter Comparison

Parameter	2SC4134T-TL-E	2SC4135T-TL-E	MJD31C-13	MJD31CT4	MJD31CT4-A
Manufacturer	onsemi	onsemi	Diodes Incorporated	onsemi	STMicroelectronics
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V	100 V	100 V
Current - Collector (Ic) (Max)	1 A	2 A	3 A	3 A	3 A
Power - Max	800 mW	1 W	1.56 W	15 W	15 W
Frequency - Transition	120 MHz	120 MHz	3 MHz	3 MHz	—
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 5V	200 @ 100mA, 5V	10 @ 3A, 4V	10 @ 3A, 4V	10 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	400mV @ 40mA, 400mA	400mV @ 100mA, 1A	1.2V @ 375mA, 3A	1.2V @ 375mA, 3A	1.2V @ 375mA, 3A
Operating Temperature (Max)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Product Status	Active	Active	Active	Obsolete	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	RoHS non-compliant	ROHS3 Compliant

Engineering Selection Recommendations

2SC4135T-TL-E (onsemi)

This part is the primary direct substitute for the 2SC4134T-TL-E. Both devices are manufactured by onsemi, share identical transition frequency (120 MHz), DC current gain specifications (200 @ 100mA, 5V), and package configuration. The 2SC4135T-TL-E provides doubled collector current capacity (2 A versus 1 A) and increased power dissipation (1 W versus 800 mW) while maintaining the same 100 V breakdown voltage. Both parts are RoHS3 compliant and active in production. This substitution is suitable for applications requiring higher current margin or thermal headroom.

MJD31CT4-A (STMicroelectronics)

This part is an active, RoHS3-compliant alternative offering 3 A collector current and 15 W power dissipation in the same TO-252-3 DPAK package. The MJD31CT4-A maintains the 100 V breakdown voltage specification. However, the transition frequency is not specified, and the DC current gain is significantly lower (10 @ 3A, 4V versus 200 @ 100mA, 5V). This part is suitable for applications where higher current capacity is required and frequency response is not a limiting factor.

MJD31C-13 (Diodes Incorporated)

This part is an active, RoHS3-compliant alternative with 3 A collector current and 1.56 W power dissipation in the TO-252-3 DPAK package. The MJD31C-13 maintains the 100 V breakdown voltage. The transition frequency is 3 MHz, significantly lower than the 2SC4134T-TL-E (120 MHz). The DC current gain is 10 @ 3A, 4V. This part is suitable for low-frequency applications requiring higher current capacity.

MJD31CT4 (onsemi)

This part is obsolete and RoHS non-compliant. Although it shares the same base product number (MJD31) and electrical specifications as the MJD31CT4-A, its obsolete status and non-compliance with RoHS3 regulations make it unsuitable for new designs or procurement.

Frequently Asked Questions (FAQ)

Q: Can the 2SC4135T-TL-E directly replace the 2SC4134T-TL-E in all applications?

A: The 2SC4135T-TL-E is a direct substitute for the 2SC4134T-TL-E in applications where the circuit design accommodates the higher current rating (2 A versus 1 A). Both parts share identical transition frequency (120 MHz), DC current gain (200 @ 100mA, 5V), and package configuration. The increased power dissipation capability (1 W versus 800 mW) provides additional thermal margin. No circuit modifications are required for pin-compatible substitution.

Q: What are the key differences between the 2SC4134T-TL-E and the MJD31 series parts?

A: The primary differences are collector current rating (1 A for 2SC4134T-TL-E versus 3 A for MJD31 series), transition frequency (120 MHz for 2SC4134T-TL-E versus 3 MHz for MJD31 series), and DC current gain specifications (200 @ 100mA, 5V for 2SC4134T-TL-E versus 10 @ 3A, 4V for MJD31 series). All parts share the same 100 V breakdown voltage and TO-252-3 DPAK package. The MJD31 series is suitable for higher-current, lower-frequency applications.

Q: Is the MJD31CT4 suitable for new designs?

A: No. The MJD31CT4 is obsolete and RoHS non-compliant. For new designs, use the MJD31CT4-A (STMicroelectronics) or MJD31C-13 (Diodes Incorporated), both of which are active and RoHS3 compliant.

Q: Can I use a higher-current-rated part in place of the 2SC4134T-TL-E?

A: Yes. Parts with higher collector current ratings (2SC4135T-TL-E at 2 A, or MJD31 series at 3 A) are electrically compatible substitutes provided the circuit design accommodates the different electrical characteristics. The 2SC4135T-TL-E maintains identical frequency response and current gain, making it the preferred uprated alternative. The MJD31 series parts have significantly lower frequency response (3 MHz) and different current gain characteristics, suitable only for low-frequency applications.

Q: Are all substitute parts available in the same package?

A: Yes. All listed substitute parts use the TO-252-3 DPAK (2 Leads + Tab) surface mount package. Pin configuration and PCB footprint are identical across all parts.

Q: What is the compliance status of each substitute part?

A: The 2SC4135T-TL-E, MJD31C-13, and MJD31CT4-A are all RoHS3 compliant and active in production. The MJD31CT4 is RoHS non-compliant and obsolete. For applications requiring RoHS compliance, use only the 2SC4135T-TL-E, MJD31C-13, or MJD31CT4-A.

Q: How do I select between the 2SC4135T-TL-E and the MJD31CT4-A?

A: Use the 2SC4135T-TL-E for applications requiring high-frequency operation (120 MHz) and high current gain (200 @ 100mA, 5V). Use the MJD31CT4-A for applications requiring maximum current capacity (3 A) and power dissipation (15 W) where frequency response is not critical. Both are RoHS3 compliant and active.

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