2SC4134S-TL-E Equivalent & Substitute Parts

Part Overview

The 2SC4134S-TL-E is an NPN bipolar junction transistor manufactured by onsemi, rated for 100V collector-emitter breakdown voltage and 1A maximum collector current. This surface mount device in TO-252-3 DPAK package is designed for general-purpose switching and amplification applications with 800mW power dissipation capability. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity.

Substiute Parts

2SC4134S-TL-E
onsemiIn Stock: 136172SC4134S-TL-E Datasheet
2SC4134S-TL-E
Current Part
2SC4135S-TL-E
onsemiIn Stock: 12282SC4135S-TL-E Datasheet
2SC4135S-TL-E
Direct
MJD31C-13
Diodes IncorporatedIn Stock: 20136MJD31C-13 Datasheet
MJD31C-13
Similar
MJD31CT4
onsemiIn Stock: 17079MJD31CT4 Datasheet
MJD31CT4
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MJD31CT4-A
STMicroelectronicsIn Stock: 15475MJD31CT4-A Datasheet
MJD31CT4-A
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN -
Voltage - Collector Emitter Breakdown (Max) 100 V
Current - Collector (Ic) (Max) 1 A
Power - Max 800 mW
Frequency - Transition 120 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 5V -
Vce Saturation (Max) @ Ib, Ic 400mV @ 40mA, 400mA -
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63 -
Mounting Type Surface Mount -
Operating Temperature (Max) 150 °C (TJ)

Substitute Part Grouping Explanation

Substitution of the 2SC4134S-TL-E is determined by the following critical parameters:

Mandatory Compatibility Criteria:

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 100V minimum
  • Package / Case: TO-252-3 DPAK surface mount
  • Mounting Type: Surface Mount

Performance Matching Criteria:

  • Current - Collector (Ic) (Max): Equal to or greater than 1A
  • Power - Max: Equal to or greater than 800mW
  • DC Current Gain (hFE): Minimum 140 @ specified conditions
  • Frequency - Transition: 3MHz or higher

Substitute parts are grouped into two categories: direct equivalents (same electrical specifications within tolerance) and similar parts (higher current or power ratings that maintain backward compatibility).

Parameter Comparison

Parameter 2SC4134S-TL-E 2SC4135S-TL-E MJD31CT4-A MJD31C-13 MJD31CT4
Manufacturer onsemi onsemi STMicroelectronics Diodes Incorporated onsemi
Transistor Type NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 100V 100V 100V 100V 100V
Current - Collector (Ic) (Max) 1A 2A 3A 3A 3A
Power - Max 800mW 1W 15W 1.56W 15W
Frequency - Transition 120MHz 120MHz - 3MHz 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 5V 140 @ 100mA, 5V 10 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V
Package / Case TO-252-3 DPAK TO-252-3 DPAK TO-252-3 DPAK TO-252-3 DPAK TO-252-3 DPAK
Operating Temperature (Max) 150°C 150°C 150°C 150°C 150°C
Product Status Obsolete Obsolete Active Active Obsolete
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant RoHS non-compliant

Engineering Selection Recommendations

Primary Substitute: 2SC4135S-TL-E

The 2SC4135S-TL-E is the direct equivalent from onsemi with identical electrical characteristics at the 1A operating point. It provides 2A maximum collector current and 1W power dissipation, offering improved headroom over the original 2SC4134S-TL-E. Both devices share identical transition frequency (120MHz), DC current gain specifications, and package configuration. ROHS3 compliance is maintained. This part is recommended for direct replacement in existing designs where the original part is no longer available.

Secondary Substitute: MJD31CT4-A

The MJD31CT4-A from STMicroelectronics is an active product with 3A collector current rating and 15W power dissipation. It maintains the 100V breakdown voltage and TO-252-3 DPAK package. The device is ROHS3 compliant and currently in production, ensuring long-term availability. The higher current and power ratings provide design margin for applications requiring increased performance headroom. DC current gain at 3A operation is lower (10 vs. 140), requiring circuit verification for gain-dependent applications.

Tertiary Substitute: MJD31C-13

The MJD31C-13 from Diodes Incorporated is an active product rated for 3A collector current and 1.56W power dissipation. It maintains 100V breakdown voltage and TO-252-3 DPAK package with ROHS3 compliance. Transition frequency is reduced to 3MHz compared to the original 120MHz specification. This part is suitable for low-frequency switching applications where the reduced frequency specification does not impact circuit performance.

Not Recommended: MJD31CT4

The MJD31CT4 from onsemi is RoHS non-compliant and obsolete. While it provides equivalent electrical performance to MJD31CT4-A, the non-compliance status and obsolete classification make it unsuitable for new designs or long-term procurement strategies.

Frequently Asked Questions (FAQ)

Q: Can 2SC4135S-TL-E directly replace 2SC4134S-TL-E in all applications?

A: Yes, within the 1A operating range. The 2SC4135S-TL-E maintains identical electrical specifications at 1A collector current, including 120MHz transition frequency and 140 minimum DC current gain. The higher 2A rating and 1W power dissipation provide additional design margin without affecting compatibility.

Q: What are the key differences between onsemi 2SC series and MJD series substitutes?

A: The 2SC4135S-TL-E maintains the original 120MHz transition frequency and 140 minimum DC current gain. MJD series devices (MJD31CT4-A, MJD31C-13, MJD31CT4) are power transistors with 3A ratings but reduced transition frequency (3MHz) and lower DC current gain (10). Selection depends on whether the application requires high-frequency performance or higher current capacity.

Q: Are all substitute parts ROHS3 compliant?

A: Four of five substitute parts are ROHS3 compliant: 2SC4135S-TL-E, MJD31CT4-A, MJD31C-13. The MJD31CT4 is RoHS non-compliant and should not be used in new designs subject to RoHS requirements.

Q: What is the impact of reduced transition frequency in MJD31 devices?

A: The MJD31 series operates at 3MHz transition frequency compared to 120MHz for the 2SC4134S-TL-E and 2SC4135S-TL-E. This reduction is acceptable for DC switching and low-frequency amplification but may limit performance in high-frequency applications above 3MHz.

Q: Can MJD31CT4-A be used in applications requiring 120MHz operation?

A: No. The MJD31CT4-A transition frequency specification is not provided in the datasheet parameters. The MJD31 series is rated for 3MHz operation. For applications requiring 120MHz performance, use 2SC4135S-TL-E.

Q: What is the package compatibility across all substitute parts?

A: All substitute parts use TO-252-3 DPAK (2 Leads + Tab) surface mount package, SC-63 designation. Physical footprint and PCB layout compatibility is maintained across all parts.

Q: Which substitute offers the best long-term availability?

A: MJD31CT4-A from STMicroelectronics is classified as active product status, ensuring continued manufacturing and procurement availability. 2SC4135S-TL-E, while ROHS3 compliant, is obsolete. MJD31C-13 is active but from a different manufacturer.

Q: Are there inventory considerations for substitute selection?

A: Current inventory levels are: 2SC4135S-TL-E (1,214 pcs), MJD31CT4-A (15,408 pcs), MJD31C-13 (20,100 pcs), MJD31CT4 (17,029 pcs). Higher inventory levels in MJD series provide better short-term availability, though active product status of MJD31CT4-A ensures long-term supply.

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