2SC4134S-E Equivalent & Substitute Parts

Part Overview

The 2SC4134S-E is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 1 A, collector-emitter breakdown voltage of 100 V, and maximum power dissipation of 800 mW in a Through Hole TO-251-3 package configuration. The 2SC4134S-E is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and component procurement.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) (Max)	1	A
Voltage - Collector Emitter Breakdown (Max)	100	V
Vce Saturation (Max)	400	mV @ 40mA, 400mA
Current - Collector Cutoff (Max)	100	nA (ICBO)
DC Current Gain (hFE) (Min)	140	@ 100mA, 5V
Power - Max	800	mW
Frequency - Transition	120	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	—

Substitute Part Grouping Explanation

Substitution of the 2SC4134S-E is determined by electrical parameter compatibility within the following criteria:

Electrical Compatibility Requirements:

Transistor type must be NPN
Collector current rating must equal or exceed 1 A
Collector-emitter breakdown voltage must equal or exceed 100 V
DC current gain (hFE) minimum must equal or exceed 140 @ 100mA, 5V
Current-collector cutoff (ICBO) must not exceed 100 nA
Operating temperature must support 150°C (TJ)

Mechanical Compatibility:

Mounting type must be Through Hole
Package configuration must accommodate TO-251-3 or equivalent footprint dimensions

The TTC004B,Q from Toshiba Semiconductor and Storage meets these substitution criteria with enhanced electrical ratings across multiple parameters, providing design margin for the specified application requirements.

Parameter Comparison

Parameter	2SC4134S-E (onsemi)	TTC004B,Q (Toshiba)	Unit
Transistor Type	NPN	NPN	—
Current - Collector (Ic) (Max)	1	1.5	A
Voltage - Collector Emitter Breakdown (Max)	100	160	V
Vce Saturation (Max)	400 @ 40mA, 400mA	500 @ 50mA, 500mA	mV
Current - Collector Cutoff (Max)	100	100	nA (ICBO)
DC Current Gain (hFE) (Min)	140 @ 100mA, 5V	140 @ 100mA, 5V	—
Power - Max	800	10	mW / W
Frequency - Transition	120	100	MHz
Operating Temperature (TJ)	150	150	°C
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-225AA, TO-126-3	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The TTC004B,Q is a qualified substitute for the 2SC4134S-E based on the following engineering criteria:

Electrical Sufficiency: The TTC004B,Q exceeds the minimum electrical requirements of the 2SC4134S-E across all critical parameters. Collector current rating of 1.5 A provides 50% margin above the 1 A requirement. Collector-emitter breakdown voltage of 160 V exceeds the 100 V specification by 60%. DC current gain minimum of 140 @ 100mA, 5V matches the original specification exactly. Collector cutoff current remains at 100 nA (ICBO), maintaining leakage characteristics.

Product Status and Availability: The TTC004B,Q maintains Active product status with 881 pieces in new original stock, ensuring long-term procurement viability. The 2SC4134S-E is classified as Obsolete with limited remaining inventory of 908 pieces.

Compliance and Certifications: The TTC004B,Q is RoHS Compliant, whereas the 2SC4134S-E compliance status is not specified. Both devices carry ECCN classification EAR99 and share identical Moisture Sensitivity Level (MSL) rating of 1 (Unlimited).

Package Consideration: The TTC004B,Q is supplied in TO-126N package (TO-225AA, TO-126-3 case), which differs from the TO-251-3 package of the 2SC4134S-E. PCB layout modification is required to accommodate the different package footprint.

Frequently Asked Questions (FAQ)

Q: Can the TTC004B,Q directly replace the 2SC4134S-E without circuit modification?

A: Electrical substitution is valid. The TTC004B,Q meets or exceeds all electrical specifications of the 2SC4134S-E. However, package footprint differs (TO-126N versus TO-251-3), requiring PCB layout changes. Pin configuration must be verified for correct terminal mapping.

Q: What are the key electrical differences between these devices?

A: The TTC004B,Q provides enhanced ratings: 1.5 A collector current versus 1 A, 160 V breakdown voltage versus 100 V, and 10 W power dissipation versus 800 mW. DC current gain and collector cutoff current specifications are identical. Transition frequency is 100 MHz for TTC004B,Q versus 120 MHz for 2SC4134S-E.

Q: Is the TTC004B,Q suitable for applications requiring the full 120 MHz transition frequency of the 2SC4134S-E?

A: The TTC004B,Q operates at 100 MHz transition frequency, which is 17% lower than the 2SC4134S-E specification. Applications requiring the full 120 MHz bandwidth must evaluate whether 100 MHz operation meets performance requirements.

Q: What is the impact of the different package types on circuit design?

A: The 2SC4134S-E uses TO-251-3 (IPak) package, while TTC004B,Q uses TO-126N package. These packages have different physical dimensions, lead spacing, and thermal characteristics. PCB footprint redesign is mandatory. Thermal performance may differ due to package geometry variations.

Q: Are there any compliance or regulatory differences between these parts?

A: The TTC004B,Q is RoHS Compliant. The 2SC4134S-E RoHS status is not specified. Both devices are REACH Unaffected and carry EAR99 ECCN classification. Moisture Sensitivity Level is identical at MSL 1 (Unlimited).

Q: What inventory considerations apply to this substitution?

A: The 2SC4134S-E is Obsolete with 908 pieces currently in stock. The TTC004B,Q is Active with 881 pieces in stock, providing superior long-term availability and procurement reliability for future production requirements.

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