2SC3649T-TD-H Equivalent & Substitute Parts

Part Overview

The 2SC3649T-TD-H is an NPN bipolar junction transistor manufactured by onsemi, rated for 160 V collector-emitter breakdown voltage and 1.5 A maximum collector current. This surface mount device is designed for general-purpose switching and amplification applications with a maximum power dissipation of 500 mW and transition frequency of 120 MHz. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications. Substitute parts must maintain electrical compatibility across voltage, current, and frequency specifications while accommodating packaging and thermal requirements.

Substiute Parts

2SC3649T-TD-H

onsemiIn Stock: 10752SC3649T-TD-H Datasheet

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2SC3649T-TD-E

onsemiIn Stock: 21572SC3649T-TD-E Datasheet

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2SD2211T100Q

Rohm SemiconductorIn Stock: 57842SD2211T100Q Datasheet

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CXT5551-TP

Micro Commercial CoIn Stock: 943CXT5551-TP Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the 2SC3649T-TD-H is determined by the following critical parameters:

Mandatory Matching Criteria:

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 160 V minimum
• Current - Collector (Ic) (Max): 1.5 A minimum
• Mounting Type: Surface Mount
• Package / Case: TO-243AA

Acceptable Variation Criteria:

• Power - Max: 500 mW or greater
• Frequency - Transition: 120 MHz or greater
• DC Current Gain (hFE): Variation permitted based on application requirements
• Vce Saturation: Variation permitted within application tolerance
• Product Status: Active or Not For New Designs acceptable; Obsolete status indicates end-of-life

The substitute parts listed below meet the mandatory matching criteria and maintain electrical compatibility with the 2SC3649T-TD-H within the specified parameter ranges.

Parameter Comparison

Engineering Selection Recommendations

2SC3649T-TD-E (onsemi)

The 2SC3649T-TD-E is the primary substitute for the 2SC3649T-TD-H. Both parts are manufactured by onsemi and share identical electrical specifications across voltage, current, power, and frequency parameters. The 2SC3649T-TD-E maintains Active product status, ensuring continued availability and manufacturing support. This part differs only in packaging format (Tape & Reel versus unspecified packaging) and DC Current Gain specification (100 versus 200 @ 100mA, 5V). Both parts are ROHS3 Compliant with MSL 1 rating and REACH Unaffected status. Selection of the 2SC3649T-TD-E is recommended for new production and replacement applications where onsemi sourcing is preferred.

2SD2211T100Q (Rohm Semiconductor)

The 2SD2211T100Q is a compatible substitute with matching voltage and current ratings. This part is manufactured by Rohm Semiconductor and carries a Not For New Designs status, indicating it remains available for existing production but is not recommended for new circuit designs. The 2SD2211T100Q provides enhanced power dissipation capability (2 W versus 500 mW) and operates at a lower transition frequency (80 MHz versus 120 MHz). Vce saturation is higher (2V @ 100mA, 1A versus 450mV @ 50mA, 500mA), which may affect switching performance in saturation-mode applications. This part is ROHS3 Compliant with MSL 1 rating and REACH Unaffected status. Selection is appropriate for applications where higher power dissipation is beneficial and lower switching frequency is acceptable.

CXT5551-TP (Micro Commercial Co)

The CXT5551-TP is a partial substitute with reduced maximum collector current (600 mA versus 1.5 A). This part maintains the 160 V voltage rating and 500 mW power dissipation. The CXT5551-TP operates at 100 MHz transition frequency and exhibits superior saturation characteristics (200mV @ 5mA, 50mA). This part carries Active product status and provides extended operating temperature range (-65°C to 150°C). Selection of the CXT5551-TP is appropriate only for applications where collector current requirements do not exceed 600 mA and where the improved saturation performance provides circuit advantage. REACH Unaffected status is confirmed; RoHS and MSL compliance are not specified.

Frequently Asked Questions (FAQ)

Q: Can the 2SC3649T-TD-E directly replace the 2SC3649T-TD-H in existing designs?

A: Yes. The 2SC3649T-TD-E is electrically compatible with the 2SC3649T-TD-H across all critical parameters: 160 V breakdown voltage, 1.5 A maximum collector current, 500 mW power dissipation, and 120 MHz transition frequency. Both parts use the TO-243AA package. The primary difference is packaging format (Tape & Reel versus unspecified) and DC Current Gain specification (100 versus 200 @ 100mA, 5V). Verify that the lower hFE value does not impact circuit biasing requirements.

Q: Is the 2SD2211T100Q suitable for high-frequency switching applications?

A: The 2SD2211T100Q operates at 80 MHz transition frequency, which is lower than the 2SC3649T-TD-H specification of 120 MHz. This part is suitable for applications operating below 80 MHz. Additionally, the 2SD2211T100Q exhibits higher Vce saturation (2V @ 100mA, 1A), which may increase switching losses in saturation-mode circuits. Verify that the reduced frequency capability and higher saturation voltage are acceptable for the target application.

Q: What are the current limitations of the CXT5551-TP substitute?

A: The CXT5551-TP is rated for a maximum collector current of 600 mA, compared to 1.5 A for the 2SC3649T-TD-H. This part is suitable only for applications where the maximum required collector current does not exceed 600 mA. Applications requiring higher current levels must use the 2SC3649T-TD-E or 2SD2211T100Q.

Q: Are all substitute parts RoHS3 compliant?

A: The 2SC3649T-TD-E and 2SD2211T100Q are confirmed ROHS3 Compliant. The CXT5551-TP does not specify RoHS compliance status in the provided data. Verify RoHS compliance requirements with the component supplier before final selection.

Q: What is the difference between the packaging formats listed for these parts?

A: The 2SC3649T-TD-H packaging format is not specified. The 2SC3649T-TD-E is supplied in Tape & Reel (TR) format, suitable for automated assembly. The 2SD2211T100Q is supplied in Cut Tape (CT) & Digi-Reel® format. The CXT5551-TP is supplied in Bulk format. Packaging format affects handling, storage, and assembly processes but does not impact electrical performance. Select packaging format based on production equipment and inventory management requirements.

Q: Can the 2SD2211T100Q be used in applications requiring 120 MHz operation?

A: The 2SD2211T100Q is rated for 80 MHz transition frequency, which is below the 120 MHz specification of the 2SC3649T-TD-H. This part is not suitable for applications requiring operation at or above 120 MHz. Use the 2SC3649T-TD-E or CXT5551-TP for 100+ MHz applications.

Q: What is the significance of the "Not For New Designs" status of the 2SD2211T100Q?

A: The "Not For New Designs" status indicates that the 2SD2211T100Q remains available for existing production but is not recommended for incorporation into new circuit designs. This status typically reflects manufacturer intent to phase out the part. For new designs, the 2SC3649T-TD-E (Active status) is the preferred substitute.