2SC3649S-TD-H Equivalent & Substitute Parts

Part Overview

The 2SC3649S-TD-H is an NPN bipolar junction transistor manufactured by onsemi, rated for 160 V collector-emitter breakdown voltage and 1.5 A maximum collector current. This surface mount device operates at a transition frequency of 120 MHz with a maximum power dissipation of 500 mW. The part is classified as obsolete, necessitating identification of active equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical performance within the specified parameter ranges while accommodating packaging and availability constraints.

Substiute Parts

2SC3649S-TD-H
onsemiIn Stock: 8342SC3649S-TD-H Datasheet
2SC3649S-TD-H
Current Part
2SC3649S-TD-E
onsemiIn Stock: 63482SC3649S-TD-E Datasheet
2SC3649S-TD-E
Similar
CXT5551-TP
Micro Commercial CoIn Stock: 943CXT5551-TP Datasheet
CXT5551-TP
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 160 V
Current - Collector (Ic) (Max) 1.5 A
Power - Max 500 mW
Frequency - Transition 120 MHz
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature (Max) 150 °C

Substitute Part Grouping Explanation

Substitution eligibility for the 2SC3649S-TD-H is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN configuration required
  • Voltage - Collector Emitter Breakdown (Max): Minimum 160 V
  • Current - Collector (Ic) (Max): Minimum 1.5 A
  • Power - Max: Minimum 500 mW
  • Frequency - Transition: Minimum 120 MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Operating Temperature (Max): Minimum 150°C

Parts are grouped into two categories based on substitution compatibility:

Group 1 - Direct Electrical Equivalents (Same Base Product Series): Parts maintaining identical electrical specifications and the same base product number (2SC3649) with active product status.

Group 2 - Functional Equivalents (Alternative Manufacturer): Parts from alternative manufacturers meeting the primary electrical criteria but with variations in secondary parameters such as current gain (hFE) or saturation voltage.

Parameter Comparison

Parameter 2SC3649S-TD-H (Main) 2SC3649S-TD-E (Substitute) CXT5551-TP (Substitute)
Manufacturer onsemi onsemi Micro Commercial Co
Product Status Obsolete Active Active
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 160 V 160 V 160 V
Current - Collector (Ic) (Max) 1.5 A 1.5 A 600 mA
Power - Max 500 mW 500 mW 500 mW
Frequency - Transition 120 MHz 120 MHz 100 MHz
Operating Temperature (Max) 150°C 150°C 150°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA
Packaging Format Tube Tape & Reel (TR) Bulk
RoHS Status ROHS3 Compliant ROHS3 Compliant Not Specified
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Not Specified

Engineering Selection Recommendations

2SC3649S-TD-E (Primary Substitute): The 2SC3649S-TD-E is the preferred substitute for the obsolete 2SC3649S-TD-H. Both parts share identical electrical specifications, including 160 V breakdown voltage, 1.5 A maximum collector current, 500 mW power rating, and 120 MHz transition frequency. The 2SC3649S-TD-E maintains active product status with ROHS3 compliance and MSL 1 rating, ensuring long-term availability and regulatory alignment. The primary difference is packaging format (Tape & Reel versus tube), which does not affect electrical performance. Inventory availability of 6255 units supports production requirements.

CXT5551-TP (Secondary Substitute): The CXT5551-TP from Micro Commercial Co functions as an alternative substitute when the 2SC3649S-TD-E is unavailable. This part meets the 160 V breakdown voltage, 500 mW power, and 150°C operating temperature requirements. However, the maximum collector current is limited to 600 mA, which is 60% of the 2SC3649S-TD-H specification. The transition frequency is 100 MHz, below the 120 MHz requirement. The CXT5551-TP is suitable only for applications where collector current does not exceed 600 mA and frequency performance is not critical. Active product status and 927 units in inventory provide availability.

Frequently Asked Questions (FAQ)

Q: Can the 2SC3649S-TD-E directly replace the 2SC3649S-TD-H without circuit modification?

A: Yes. The 2SC3649S-TD-E provides identical electrical performance across all critical parameters: 160 V breakdown voltage, 1.5 A collector current, 500 mW power dissipation, and 120 MHz transition frequency. The only difference is packaging format (Tape & Reel versus tube), which does not affect electrical operation. No circuit modification is required.

Q: What are the limitations of using CXT5551-TP as a substitute?

A: The CXT5551-TP has two significant parameter reductions: maximum collector current is 600 mA (versus 1.5 A) and transition frequency is 100 MHz (versus 120 MHz). This part is suitable only for circuits where collector current remains below 600 mA and where the lower frequency response is acceptable. Applications requiring the full 1.5 A current capability or 120 MHz performance must use the 2SC3649S-TD-E.

Q: Are there compliance or regulatory differences between the substitute parts?

A: The 2SC3649S-TD-E maintains ROHS3 compliance and MSL 1 rating identical to the main part. The CXT5551-TP does not specify RoHS or MSL status in the provided data. For applications requiring documented ROHS3 compliance, the 2SC3649S-TD-E is the appropriate choice.

Q: Does packaging format affect electrical performance or circuit design?

A: No. The 2SC3649S-TD-H (tube packaging) and 2SC3649S-TD-E (Tape & Reel packaging) are electrically identical. Packaging format affects only procurement, handling, and assembly processes. Circuit design and electrical performance remain unchanged.

Q: What is the DC current gain difference between the main part and 2SC3649S-TD-E?

A: The 2SC3649S-TD-H specifies minimum DC current gain (hFE) of 140 at 100 mA and 5 V. The 2SC3649S-TD-E specifies minimum hFE of 100 at the same conditions. This 40-unit difference may affect bias circuit design in applications with tight gain tolerance requirements. Verify circuit performance if gain-dependent biasing is used.

Q: Is the 2SC3649S-TD-E available in the same tube packaging as the original part?

A: No. The 2SC3649S-TD-E is supplied in Tape & Reel (TR) format. If tube packaging is required for specific assembly processes, alternative procurement channels or packaging services may be necessary. The electrical performance is identical regardless of packaging format.

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