2SC3503CSTU Equivalent & Substitute Parts

Part Overview

The 2SC3503CSTU is an NPN bipolar junction transistor (BJT) manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a 300 V collector-emitter breakdown voltage rating with a maximum collector current of 100 mA and 7 W power dissipation capability. The transistor is housed in a TO-126-3 through-hole package suitable for conventional PCB assembly.

The 2SC3503CSTU is classified as an obsolete product. Identification of equivalent substitute parts is necessary to maintain design continuity, ensure component availability, and support ongoing production or repair requirements for legacy systems utilizing this transistor.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	300	V
Vce Saturation (Max) @ Ib, Ic	600 mV @ 2 mA, 20 mA	—
Current - Collector Cutoff (Max)	100	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10 mA, 10 V	—
Power - Max	7	W
Frequency - Transition	150	MHz
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-126-3	—

Substitute Part Grouping Explanation

Substitution of the 2SC3503CSTU is determined by electrical and mechanical parameter equivalence. The following criteria establish valid substitution:

Electrical Parameters (Critical):

Transistor type: NPN
Maximum collector current: 100 mA
Collector-emitter breakdown voltage: 300 V
Vce saturation: 600 mV @ 2 mA, 20 mA
Collector cutoff current: 100 nA
DC current gain (hFE): 40 minimum @ 10 mA, 10 V
Maximum power dissipation: 7 W
Transition frequency: 150 MHz
Operating temperature range: -55°C to 150°C

Mechanical Parameters (Critical):

Mounting type: Through Hole
Package designation: TO-126-3

Substitute parts must satisfy all electrical parameters within the specified tolerances and maintain identical mechanical compatibility. Parts meeting these criteria are classified as parametric equivalents and direct functional replacements.

Parameter Comparison

Parameter	2SC3503CSTU	KSC3503DSTU	Match Status
Transistor Type	NPN	NPN	Equivalent
Current - Collector (Ic) (Max)	100 mA	100 mA	Equivalent
Voltage - Collector Emitter Breakdown (Max)	300 V	300 V	Equivalent
Vce Saturation (Max) @ Ib, Ic	600 mV @ 2 mA, 20 mA	600 mV @ 2 mA, 20 mA	Equivalent
Current - Collector Cutoff (Max)	100 nA	100 nA	Equivalent
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10 mA, 10 V	40 @ 10 mA, 10 V	Equivalent
Power - Max	7 W	7 W	Equivalent
Frequency - Transition	150 MHz	150 MHz	Equivalent
Operating Temperature Range	-55°C to 150°C	-55°C to 150°C	Equivalent
Mounting Type	Through Hole	Through Hole	Equivalent
Package / Case	TO-126-3	TO-126-3	Equivalent

Engineering Selection Recommendations

The KSC3503DSTU is a parametric equivalent substitute for the 2SC3503CSTU. Both devices are manufactured by onsemi and satisfy identical electrical and mechanical specifications.

Product Status Consideration: The 2SC3503CSTU is classified as obsolete, while the KSC3503DSTU maintains active product status. Selection of the KSC3503DSTU ensures access to current manufacturing inventory and ongoing supplier support.

Compliance and Certification: The KSC3503DSTU carries RoHS3 compliance certification and maintains REACH Unaffected status, consistent with the 2SC3503CSTU. Both devices are classified under ECCN EAR99 and share identical HTSUS commodity codes.

Packaging Consideration: The KSC3503DSTU is supplied in tube packaging, whereas the 2SC3503CSTU packaging specification is not explicitly defined. Both devices utilize the TO-126-3 package format, ensuring direct mechanical and electrical compatibility in through-hole PCB applications.

Frequently Asked Questions (FAQ)

Q: Can the KSC3503DSTU directly replace the 2SC3503CSTU in existing designs?

A: Yes. The KSC3503DSTU is a parametric equivalent with identical electrical ratings and mechanical package specifications. Direct substitution is supported without circuit modification.

Q: What is the primary reason for substituting the 2SC3503CSTU?

A: The 2SC3503CSTU is classified as obsolete. The KSC3503DSTU provides equivalent functionality with active product status and current manufacturing availability.

Q: Are there differences in compliance certifications between these parts?

A: Both devices maintain REACH Unaffected status and EAR99 classification. The KSC3503DSTU carries explicit RoHS3 compliance certification. Both share identical HTSUS commodity codes.

Q: Does the TO-126-3 package ensure mechanical compatibility?

A: Yes. Both the 2SC3503CSTU and KSC3503DSTU utilize the TO-126-3 through-hole package format, ensuring identical PCB footprint, lead spacing, and mounting characteristics.

Q: Are the electrical parameters identical between these transistors?

A: Yes. Maximum collector current, collector-emitter breakdown voltage, saturation voltage, cutoff current, DC current gain, power dissipation, transition frequency, and operating temperature range are identical across both devices.

Q: What is the difference in packaging supply format?

A: The KSC3503DSTU is supplied in tube packaging. The 2SC3503CSTU packaging format is not specified in available documentation. Both devices are identical in component form and function.

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