2SC3074-O(Q) Equivalent & Substitute Parts

Part Overview

The 2SC3074-O(Q) is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, rated for 50 V collector-emitter breakdown voltage and 5 A maximum collector current. This surface mount device in PW-MOLD packaging delivers 1 W maximum power dissipation with a transition frequency of 120 MHz. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity.

Substiute Parts

2SC3074-O(Q)
Toshiba Semiconductor and StorageIn Stock: 9152SC3074-O(Q) Datasheet
2SC3074-O(Q)
Current Part
2SC5886A(T6L1,NQ)
Toshiba Semiconductor and StorageIn Stock: 11802SC5886A(T6L1,NQ) Datasheet
2SC5886A(T6L1,NQ)
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2SC5706-TL-E
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2SC5706-TL-E
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2SC6017-E
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2SC6017-E
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2SD1801S-E
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2SD1801S-E
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2SD1801T-E
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2SD1801T-E
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2SD1802S-E
onsemiIn Stock: 149552SD1802S-E Datasheet
2SD1802S-E
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2SD1802T-E
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2SD1803T-TL-H
onsemiIn Stock: 14012SD1803T-TL-H Datasheet
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 5 A
Power - Max 1 W
Frequency - Transition 120 MHz
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Operating Temperature (TJ) 150 °C
Vce Saturation (Max) @ Ib, Ic 400mV @ 150mA, 3A
Current - Collector Cutoff (Max) 1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1A, 1V

Substitute Part Grouping Explanation

Substitution of the 2SC3074-O(Q) is determined by matching the following critical electrical and mechanical parameters:

Electrical Matching Criteria:

  • Transistor type: NPN configuration
  • Voltage rating: 50 V collector-emitter breakdown voltage (minimum)
  • Current rating: 5 A maximum collector current (minimum)
  • Power dissipation: 1 W (minimum)
  • Operating temperature: 150°C junction temperature
  • Mounting type: Surface mount configuration

Mechanical Matching Criteria:

  • Package type: TO-252-3 DPAK (2 Leads + Tab) SC-63 footprint compatibility

Substitute parts are grouped into two categories based on these parameters:

Category A - Direct Surface Mount Substitutes: Parts maintaining identical mounting type, package footprint, and electrical ratings within the specified ranges.

Category B - Functional Equivalents: Parts meeting electrical specifications but with different mounting types or package configurations, suitable for redesign scenarios.

Parameter Comparison

Parameter 2SC3074-O(Q) 2SC5886A(T6L1,NQ) 2SC5706-TL-E 2SD1802T-E 2SD1803T-TL-H
Manufacturer Toshiba Toshiba onsemi Fairchild onsemi
Transistor Type NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V
Current - Collector (Ic) (Max) 5 A 5 A 5 A 5 A 5 A
Power - Max 1 W 1 W 800 mW 1 W 1 W
Frequency - Transition 120 MHz 400 MHz 150 MHz 180 MHz
Operating Temperature (TJ) 150°C 150°C 150°C 150°C 150°C
Vce Saturation (Max) @ Ib, Ic 400mV @ 150mA, 3A 220mV @ 32mA, 1.6A 240mV @ 100mA, 2A 0.5V @ 100mA, 2A 400mV @ 150mA, 3A
Current - Collector Cutoff (Max) 1 µA 100 nA 1 µA 1 µA 1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1A, 1V 400 @ 500mA, 2V 200 @ 500mA, 2V 200 @ 100mA, 2V 200 @ 500mA, 2V
Mounting Type Surface Mount Surface Mount Surface Mount Through Hole Surface Mount
Package / Case TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-251-3 IPak TO-252-3, DPAK
Product Status Obsolete Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation - 2SD1803T-TL-H:

The 2SD1803T-TL-H is the optimal direct substitute for the 2SC3074-O(Q). This onsemi part maintains identical electrical specifications including 50 V breakdown voltage, 5 A collector current, and 1 W power dissipation. The surface mount TO-252-3 DPAK package provides footprint compatibility without redesign. The part is active in production status with ROHS3 compliance and REACH unaffected certification. Transition frequency of 180 MHz exceeds the original 120 MHz specification, providing enhanced performance margin.

Secondary Recommendation - 2SC5706-TL-E:

The 2SC5706-TL-E from onsemi meets all critical electrical parameters with 50 V breakdown voltage and 5 A collector current in identical TO-252-3 DPAK surface mount packaging. This part is active in production with ROHS3 compliance and REACH unaffected status. The 400 MHz transition frequency provides significant performance headroom. Power dissipation is rated at 800 mW, which is acceptable for applications not requiring the full 1 W specification.

Alternative Recommendation - 2SC5886A(T6L1,NQ):

The 2SC5886A(T6L1,NQ) from Toshiba provides electrical equivalence with 50 V breakdown voltage and 5 A collector current in TO-252-3 DPAK surface mount packaging. This part is active in production with ROHS3 compliance. The higher DC current gain (400 @ 500mA, 2V) and lower collector cutoff current (100 nA) offer improved performance characteristics. Packaging is supplied in Tape & Reel format.

Through-Hole Alternative - 2SD1802T-E:

For applications permitting through-hole mounting, the 2SD1802T-E from Fairchild Semiconductor provides electrical equivalence with 50 V breakdown voltage and 5 A collector current. This part is active in production. The TO-251-3 IPak package requires board redesign but offers alternative assembly options. Transition frequency of 150 MHz meets or exceeds the original specification.

Frequently Asked Questions (FAQ)

Q: Can the 2SC3074-O(Q) be directly replaced with 2SD1803T-TL-H without board modifications?

A: Yes. Both parts use identical TO-252-3 DPAK surface mount packaging with the same footprint and pinout. No board redesign is required for direct substitution.

Q: What is the significance of the transition frequency difference between 2SC3074-O(Q) (120 MHz) and 2SD1803T-TL-H (180 MHz)?

A: The higher transition frequency of 2SD1803T-TL-H indicates faster switching capability. This provides performance margin for the application and does not create compatibility issues with circuits designed for the original 120 MHz specification.

Q: Why is 2SC5706-TL-E rated at 800 mW instead of 1 W like the original part?

A: The 2SC5706-TL-E has a maximum power dissipation of 800 mW. This is acceptable for applications where actual power dissipation remains below 800 mW. Applications requiring the full 1 W specification should use 2SD1803T-TL-H or 2SC5886A(T6L1,NQ).

Q: Are there compliance differences between substitute parts?

A: The 2SD1803T-TL-H, 2SC5706-TL-E, and 2SC5886A(T6L1,NQ) are all ROHS3 compliant and carry REACH unaffected status. The original 2SC3074-O(Q) compliance information is not provided in the specification data.

Q: Can 2SD1802T-E be used as a substitute despite its through-hole package?

A: The 2SD1802T-E meets all electrical specifications but requires TO-251-3 IPak through-hole mounting. This part is suitable only for applications undergoing board redesign or for through-hole assembly processes. Direct footprint substitution is not possible.

Q: What is the difference between 2SC5886A(T6L1,NQ) and 2SD1803T-TL-H in terms of DC current gain?

A: The 2SC5886A(T6L1,NQ) has a minimum DC current gain of 400 @ 500mA, 2V, while 2SD1803T-TL-H has 200 @ 500mA, 2V. The higher gain of 2SC5886A may require circuit bias adjustments in applications sensitive to current gain variations.

Q: Is the 2SC3074-O(Q) still available for new designs?

A: No. The 2SC3074-O(Q) is classified as obsolete. Active production alternatives must be selected for new designs. The recommended substitutes 2SD1803T-TL-H, 2SC5706-TL-E, and 2SC5886A(T6L1,NQ) are all in active production status.

Q: What packaging format is supplied for 2SC5886A(T6L1,NQ)?

A: The 2SC5886A(T6L1,NQ) is supplied in Tape & Reel (TR) format, suitable for automated assembly processes. The original 2SC3074-O(Q) packaging format is not specified in the available data.

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