2SC2712-BL-TP Equivalent & Substitute Parts

Part Overview

The 2SC2712-BL-TP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for interface applications in surface mount configurations. This part operates at a maximum collector current of 150 mA, collector-emitter breakdown voltage of 50 V, and maximum power dissipation of 150 mW. The device is packaged in SOT-23 (TO-236-3) format with an active product status and REACH unaffected compliance designation.

Equivalent and substitute parts are identified based on matching or exceeding the electrical and mechanical specifications of the 2SC2712-BL-TP. Substitutes are categorized as direct equivalents (same base product number with different packaging or tape formats) or similar alternatives (different manufacturers with comparable electrical performance and package compatibility).

Substiute Parts

2SC2712-BL-TP
Micro Commercial CoIn Stock: 9832SC2712-BL-TP Datasheet
2SC2712-BL-TP
Current Part
2SC2712-BL,LF
Toshiba Semiconductor and StorageIn Stock: 85002SC2712-BL,LF Datasheet
2SC2712-BL,LF
Direct
2SC2712-GR,LF
Toshiba Semiconductor and StorageIn Stock: 121432SC2712-GR,LF Datasheet
2SC2712-GR,LF
Direct
2SC2712-OTE85LF
Toshiba Semiconductor and StorageIn Stock: 244662SC2712-OTE85LF Datasheet
2SC2712-OTE85LF
Direct
2SD2226KT146V
Rohm SemiconductorIn Stock: 901812SD2226KT146V Datasheet
2SD2226KT146V
Similar
CMPT6428 TR PBFREE
Central Semiconductor CorpIn Stock: 7199CMPT6428 TR PBFREE Datasheet
CMPT6428 TR PBFREE
Similar
CMPT6429 TR PBFREE
Central Semiconductor CorpIn Stock: 15276CMPT6429 TR PBFREE Datasheet
CMPT6429 TR PBFREE
Similar
MMBT6428LT1G
onsemiIn Stock: 23363MMBT6428LT1G Datasheet
MMBT6428LT1G
Similar
NXP3875YVL
Nexperia USA Inc.In Stock: 10802NXP3875YVL Datasheet
NXP3875YVL
Similar
TBC847B,LM
Toshiba Semiconductor and StorageIn Stock: 116035TBC847B,LM Datasheet
TBC847B,LM
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 150 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 250 mV @ 10 mA, 100 mA
Current - Collector Cutoff (Max) 100 nA
DC Current Gain (hFE) Min @ Ic, Vce 70 @ 2 mA, 6 V
Power - Max 150 mW
Frequency - Transition 80 MHz
Operating Temperature -55 to 150 °C
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Substitute Part Grouping Explanation

Substitute parts for the 2SC2712-BL-TP are classified into two categories based on electrical and mechanical compatibility:

Direct Equivalents share the same base product number (2SC2712) and maintain identical electrical specifications across all critical parameters: collector current (150 mA), collector-emitter breakdown voltage (50 V), saturation voltage (250 mV @ 10 mA, 100 mA), cutoff current (100 nA), DC current gain (70 @ 2 mA, 6 V), power dissipation (150 mW), and transition frequency (80 MHz). These parts differ only in packaging format (Tape & Reel, Cut Tape, or S-Mini) and supplier device package designation. Direct equivalents include 2SC2712-BL,LF, 2SC2712-GR,LF, and 2SC2712-OTE85LF from Toshiba Semiconductor and Storage.

Similar Alternatives are manufactured by different suppliers and may exhibit variations in one or more electrical parameters while maintaining compatibility with the primary application requirements. These parts are selected based on the following criteria:

  • Transistor type remains NPN
  • Collector-emitter breakdown voltage meets or exceeds 50 V
  • Collector current capacity meets or exceeds 150 mA
  • Surface mount package compatibility (TO-236-3, SC-59, SOT-23-3)
  • Operating temperature range encompasses the primary part's range or extends it
  • Product status is Active with RoHS3 compliance

Similar alternatives include MMBT6428LT1G (onsemi), NXP3875YVL (Nexperia USA Inc.), TBC847B,LM (Toshiba), 2SD2226KT146V (Rohm Semiconductor), CMPT6428 TR PBFREE, and CMPT6429 TR PBFREE (Central Semiconductor Corp).

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V Vce Sat mV hFE Min Power mW Freq MHz Temp °C Package Packaging Type
2SC2712-BL-TP Micro Commercial Co 150 50 250 @ 10mA, 100mA 70 @ 2mA, 6V 150 80 -55 to 150 SOT-23 Bulk
2SC2712-BL,LF Toshiba Semiconductor and Storage 150 50 250 @ 10mA, 100mA 70 @ 2mA, 6V 150 80 -55 to 125 S-Mini Tape & Reel
2SC2712-GR,LF Toshiba Semiconductor and Storage 150 50 250 @ 10mA, 100mA 70 @ 2mA, 6V 150 80 -55 to 125 S-Mini Cut Tape & Digi-Reel
2SC2712-OTE85LF Toshiba Semiconductor and Storage 150 50 250 @ 10mA, 100mA 70 @ 2mA, 6V 150 80 -55 to 125 TO-236 Tape & Reel
NXP3875YVL Nexperia USA Inc. 150 50 250 @ 10mA, 100mA 120 @ 2mA, 6V Not specified 80 -55 to 150 TO-236AB Tape & Reel
TBC847B,LM Toshiba Semiconductor and Storage 150 50 400 @ 100mA, 5mA 200 @ 2mA, 5V 320 100 -55 to 150 SOT-23-3 Cut Tape & Digi-Reel
MMBT6428LT1G onsemi 200 50 600 @ 5mA, 100mA 250 @ 100µA, 5V 225 700 -55 to 150 SOT-23-3 Tape & Reel
2SD2226KT146V Rohm Semiconductor 150 50 300 @ 5mA, 50mA 820 @ 1mA, 5V 200 250 -55 to 150 SMT3 Cut Tape & Digi-Reel
CMPT6428 TR PBFREE Central Semiconductor Corp 200 50 600 @ 5mA, 100mA 250 @ 100µA, 5V 350 700 -65 to 150 SOT-23 Tape & Reel
CMPT6429 TR PBFREE Central Semiconductor Corp 200 45 600 @ 5mA, 100mA 500 @ 100µA, 5V 350 700 -65 to 150 SOT-23 Tape & Reel

Engineering Selection Recommendations

Direct Equivalents (2SC2712 Series)

The Toshiba direct equivalents 2SC2712-BL,LF, 2SC2712-GR,LF, and 2SC2712-OTE85LF maintain identical electrical specifications to the 2SC2712-BL-TP. These parts are suitable for direct substitution in applications where the primary part is unavailable. All three variants are RoHS3 compliant with MSL rating of 1 (Unlimited). Selection between these variants depends on packaging requirements: 2SC2712-BL,LF and 2SC2712-OTE85LF are supplied in Tape & Reel format suitable for automated assembly, while 2SC2712-GR,LF is available in Cut Tape & Digi-Reel format. The operating temperature range for Toshiba variants extends to 125°C maximum junction temperature, compared to 150°C for the primary part.

Similar Alternatives with Enhanced Performance

MMBT6428LT1G (onsemi) and CMPT6428 TR PBFREE (Central Semiconductor Corp) offer increased collector current capacity (200 mA versus 150 mA) and significantly higher transition frequency (700 MHz versus 80 MHz). These parts maintain the 50 V collector-emitter breakdown voltage and are compatible with SOT-23 packaging. Both are RoHS3 compliant with MSL 1 rating. MMBT6428LT1G operates across -55°C to 150°C, matching the primary part's temperature range. CMPT6428 extends the lower temperature limit to -65°C. These alternatives are suitable for applications requiring higher frequency performance or increased current handling capacity.

NXP3875YVL (Nexperia USA Inc.) provides an automotive-grade alternative with AEC-Q101 qualification. This part matches the primary specifications (150 mA, 50 V, 80 MHz) with identical saturation voltage characteristics. The device operates across -55°C to 150°C and is RoHS3 compliant. NXP3875YVL is appropriate for automotive and mission-critical applications requiring formal qualification documentation.

TBC847B,LM (Toshiba) maintains 150 mA collector current and 50 V breakdown voltage with higher transition frequency (100 MHz) and increased power dissipation (320 mW). This part is RoHS3 compliant and operates across -55°C to 150°C. The higher saturation voltage (400 mV) and DC current gain (200) represent parameter variations that may affect circuit performance in saturation-mode applications.

2SD2226KT146V (Rohm Semiconductor) offers 150 mA collector current at 50 V with enhanced transition frequency (250 MHz) and power rating (200 mW). This part is RoHS3 compliant and operates to 150°C. The higher saturation voltage (300 mV) and significantly elevated DC current gain (820) indicate different transistor characteristics suitable for high-frequency or high-gain applications.

CMPT6429 TR PBFREE (Central Semiconductor Corp) operates at 45 V collector-emitter breakdown voltage, which is below the primary part's 50 V specification. This part is not recommended as a direct substitute due to reduced voltage margin.

Frequently Asked Questions (FAQ)

Q: Can 2SC2712-BL,LF, 2SC2712-GR,LF, and 2SC2712-OTE85LF be used interchangeably with 2SC2712-BL-TP?

A: Yes. These Toshiba variants share identical electrical specifications (150 mA, 50 V, 80 MHz, 150 mW) and are direct equivalents of the 2SC2712-BL-TP. Differences exist only in packaging format (Tape & Reel, Cut Tape, or S-Mini) and supplier device package designation. All three are RoHS3 compliant with MSL 1 rating. The operating temperature maximum is 125°C for Toshiba variants versus 150°C for the primary part.

Q: What is the difference between direct equivalents and similar alternatives?

A: Direct equivalents share the same base product number (2SC2712) and maintain identical electrical specifications across all critical parameters. Similar alternatives are manufactured by different suppliers and may exhibit variations in collector current, transition frequency, power dissipation, saturation voltage, or DC current gain while maintaining compatibility with the primary application requirements through matching or exceeding key specifications such as breakdown voltage, package type, and operating temperature range.

Q: Can MMBT6428LT1G replace 2SC2712-BL-TP in all applications?

A: MMBT6428LT1G is electrically compatible for most applications due to matching 50 V breakdown voltage, SOT-23 package compatibility, and superior performance characteristics (200 mA collector current, 700 MHz transition frequency). However, the higher saturation voltage (600 mV versus 250 mV) and different DC current gain (250 @ 100 µA, 5V versus 70 @ 2 mA, 6V) may affect circuit behavior in saturation-mode or low-frequency applications. Circuit-level verification is necessary for applications sensitive to saturation characteristics.

Q: Is NXP3875YVL suitable for automotive applications?

A: Yes. NXP3875YVL carries AEC-Q101 automotive qualification and is specifically designed for automotive-grade applications. This part matches the primary specifications (150 mA, 50 V, 80 MHz) and operates across -55°C to 150°C. RoHS3 compliance and MSL 1 rating are provided.

Q: Why does CMPT6429 TR PBFREE have a lower breakdown voltage (45 V)?

A: CMPT6429 TR PBFREE is rated for 45 V collector-emitter breakdown voltage, which is below the 2SC2712-BL-TP specification of 50 V. This reduced voltage margin makes CMPT6429 unsuitable as a direct substitute in applications where the full 50 V rating is required for circuit margin or safety considerations.

Q: What packaging formats are available for 2SC2712 equivalents?

A: Direct equivalents are available in three packaging formats: Tape & Reel (2SC2712-BL,LF and 2SC2712-OTE85LF), Cut Tape & Digi-Reel (2SC2712-GR,LF), and Bulk (2SC2712-BL-TP). All variants use SOT-23 or S-Mini surface mount packages compatible with TO-236-3 and SC-59 designations. Selection depends on assembly process requirements and volume considerations.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All direct equivalents and similar alternatives listed are RoHS3 compliant. Moisture Sensitivity Level (MSL) is rated as 1 (Unlimited) for all parts, indicating no moisture sensitivity restrictions during storage or handling.

Q: What is the significance of transition frequency differences among substitutes?

A: Transition frequency (fT) indicates the maximum frequency at which the transistor maintains useful gain. The primary part operates at 80 MHz. Similar alternatives such as MMBT6428LT1G and CMPT6428 operate at 700 MHz, while 2SD2226KT146V operates at 250 MHz. Higher transition frequency allows operation in higher-frequency circuits but does not affect performance in lower-frequency applications. Selection should match or exceed the application's frequency requirements.

Q: Can parts with higher collector current ratings (200 mA) replace the 150 mA primary part?

A: Yes. Parts with higher collector current ratings (MMBT6428LT1G, CMPT6428 TR PBFREE, CMPT6429 TR PBFREE) are backward compatible with applications designed for 150 mA operation. The higher current capacity provides additional design margin. However, other parameter differences such as saturation voltage and DC current gain must be evaluated for circuit-specific compatibility.

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