2SC2655-Y,F(J Equivalent & Substitute Parts

Part Overview

The 2SC2655-Y,F(J is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, designed for general-purpose switching and amplification applications. This through-hole component operates at a maximum collector current of 2 A and collector-emitter breakdown voltage of 50 V, with a maximum power dissipation of 900 mW. The device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support, maintenance, and production continuity in legacy systems.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) (Max)	2	A
Voltage - Collector Emitter Breakdown (Max)	50	V
Power - Max	900	mW
Frequency - Transition	100	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-226-3, TO-92-3 Long Body	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the 2SC2655-Y,F(J is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Transistor polarity (NPN type maintained)
Collector-emitter breakdown voltage (50 V maximum)
Maximum collector current rating (equal to or exceeding 2 A)
Operating temperature range (150°C maximum junction temperature)

Mechanical Compatibility Criteria:

Package type and form factor
Mounting method (through-hole or surface-mount alternatives)
Pin configuration and lead spacing

The 2SC5712(TE12L,F) meets the electrical requirements for substitution, with equal breakdown voltage (50 V) and superior current handling (3 A maximum). However, this substitute employs surface-mount technology (PW-MINI package) rather than through-hole mounting, requiring circuit board redesign for direct replacement.

Parameter Comparison

Parameter	2SC2655-Y,F(J	2SC5712(TE12L,F)	Unit
Transistor Type	NPN	NPN	—
Current - Collector (Ic) (Max)	2	3	A
Voltage - Collector Emitter Breakdown (Max)	50	50	V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 1A	140mV @ 20mA, 1A	V
Current - Collector Cutoff (Max)	1µA (ICBO)	100nA (ICBO)	—
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 500mA, 2V	400 @ 300mA, 2V	—
Power - Max	900	1	mW
Operating Temperature (TJ)	150	150	°C
Mounting Type	Through Hole	Surface Mount	—
Package / Case	TO-226-3, TO-92-3 Long Body	TO-243AA	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The 2SC5712(TE12L,F) is an active product from Toshiba Semiconductor and Storage, providing long-term availability and supply chain stability compared to the obsolete 2SC2655-Y,F(J. The substitute meets all critical electrical parameters: identical 50 V breakdown voltage, superior maximum collector current (3 A versus 2 A), and matching maximum junction temperature (150°C).

The 2SC5712(TE12L,F) demonstrates improved electrical performance characteristics, including lower saturation voltage (140 mV versus 500 mV at 1 A collector current) and higher DC current gain (400 versus 70 minimum). The device carries RoHS3 compliance certification, supporting modern manufacturing and environmental standards.

Substitution requires mechanical redesign due to package transition from through-hole TO-92-3 to surface-mount PW-MINI (TO-243AA). This change necessitates circuit board layout modification and assembly process adjustment. The increased power rating (1 W versus 900 mW) provides additional thermal margin in applications operating near maximum dissipation limits.

Frequently Asked Questions (FAQ)

Q: Can the 2SC5712(TE12L,F) directly replace the 2SC2655-Y,F(J in existing circuit boards?

A: Direct replacement on existing through-hole circuit boards is not possible. The 2SC5712(TE12L,F) uses surface-mount technology (PW-MINI package), while the 2SC2655-Y,F(J uses through-hole mounting (TO-92-3). Circuit board redesign and component footprint modification are required.

Q: Are the electrical characteristics of the 2SC5712(TE12L,F) compatible with circuits designed for the 2SC2655-Y,F(J?

A: Yes. Both devices are NPN transistors with identical 50 V collector-emitter breakdown voltage and matching 150°C maximum junction temperature. The 2SC5712(TE12L,F) exceeds the current rating (3 A versus 2 A) and provides superior performance metrics including lower saturation voltage and higher current gain.

Q: What is the significance of the product status difference between these parts?

A: The 2SC2655-Y,F(J is classified as obsolete, indicating discontinued manufacturing and limited future availability. The 2SC5712(TE12L,F) maintains active status, ensuring continued production, documented support, and supply chain accessibility for new designs and legacy system maintenance.

Q: How do the saturation voltage specifications affect circuit performance?

A: The 2SC5712(TE12L,F) exhibits lower saturation voltage (140 mV at 1 A) compared to the 2SC2655-Y,F(J (500 mV at 1 A). This reduction decreases power dissipation in switching applications and improves switching speed, resulting in enhanced overall circuit efficiency.

Q: Does the higher DC current gain of the 2SC5712(TE12L,F) require circuit modifications?

A: The higher minimum DC current gain (400 versus 70) of the 2SC5712(TE12L,F) indicates improved base-to-collector current efficiency. Existing base bias networks may require adjustment to prevent excessive base current and ensure proper operating point in the new design. Circuit simulation and validation are necessary for specific applications.

Q: What compliance certifications apply to the substitute part?

A: The 2SC5712(TE12L,F) carries RoHS3 compliance certification, meeting current environmental and hazardous substance restrictions. Both devices share EAR99 export classification and unlimited moisture sensitivity level (MSL 1).

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