2SC2655-O,F(J Equivalent & Substitute Parts

Part Overview

The 2SC2655-O,F(J is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, designed for general-purpose switching and amplification applications. This component operates at a maximum collector current of 2 A with a collector-emitter breakdown voltage of 50 V and delivers 900 mW maximum power dissipation. The device is packaged in a through-hole TO-92MOD configuration, suitable for conventional PCB assembly methods.

The 2SC2655-O,F(J is classified as obsolete. Locating equivalent or substitute components becomes necessary when original stock is depleted or when design revisions require components with improved specifications or active product status. Substitute parts must maintain electrical compatibility within the application's design parameters while potentially offering enhanced performance characteristics or superior availability.

Substiute Parts

2SC2655-O,F(J

Toshiba Semiconductor and StorageIn Stock: 12752SC2655-O,F(J Datasheet

Current PartRFQ

2SC5712(TE12L,F)

Toshiba Semiconductor and StorageIn Stock: 20572SC5712(TE12L,F) Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SC2655-O,F(J is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Transistor type must be NPN
• Collector-emitter breakdown voltage must equal or exceed 50 V
• Maximum collector current must equal or exceed 2 A
• Maximum power dissipation must equal or exceed 900 mW
• Operating temperature range must support 150°C (TJ)

Mechanical Compatibility Considerations:

• Package type and mounting method may differ from the original through-hole configuration
• Pin configuration must support the intended circuit topology

The 2SC5712(TE12L,F) satisfies the electrical requirements for substitution. This device provides a collector-emitter breakdown voltage of 50 V, maximum collector current of 3 A (exceeding the 2 A requirement), and maximum power dissipation of 1 W (exceeding the 900 mW requirement). The primary distinction is the transition from through-hole TO-92MOD packaging to surface-mount PW-MINI packaging, which requires PCB layout and assembly method modifications.

Parameter Comparison

Engineering Selection Recommendations

The 2SC5712(TE12L,F) serves as a direct electrical substitute for the 2SC2655-O,F(J within the specified application parameters. The substitute device meets or exceeds all critical electrical specifications: collector-emitter breakdown voltage (50 V), maximum collector current (3 A versus 2 A), and maximum power dissipation (1 W versus 900 mW).

The 2SC5712(TE12L,F) carries active product status, ensuring continued availability and manufacturing support. The device is RoHS3 compliant, providing environmental and regulatory alignment with modern manufacturing standards. Both components share identical operating temperature ratings (150°C TJ) and equivalent moisture sensitivity levels (MSL 1 - Unlimited).

The primary design consideration is the packaging transition from through-hole TO-92MOD to surface-mount PW-MINI. This change necessitates PCB layout modifications and surface-mount assembly processes. The substitute device exhibits improved electrical characteristics, including lower saturation voltage (140mV versus 500mV at comparable operating points), reduced collector cutoff current (100nA versus 1µA), and higher DC current gain (400 versus 70 at comparable operating points). These improvements may enhance circuit efficiency and switching performance.

Frequently Asked Questions (FAQ)

Q: Can the 2SC5712(TE12L,F) directly replace the 2SC2655-O,F(J in existing through-hole PCB designs?

A: Direct PCB replacement is not possible due to packaging differences. The 2SC2655-O,F(J uses through-hole TO-92MOD packaging, while the 2SC5712(TE12L,F) uses surface-mount PW-MINI packaging. PCB redesign and assembly method changes are required.

Q: Are the electrical specifications of the 2SC5712(TE12L,F) compatible with circuits designed for the 2SC2655-O,F(J?

A: Yes. The 2SC5712(TE12L,F) meets all minimum electrical requirements. The collector-emitter breakdown voltage (50 V) matches the original specification. The maximum collector current (3 A) and power dissipation (1 W) exceed the original device requirements (2 A and 900 mW). The improved saturation voltage and current gain characteristics are compatible with existing circuit designs.

Q: What is the significance of the product status difference between these components?

A: The 2SC2655-O,F(J is classified as obsolete, indicating discontinued manufacturing and limited stock availability. The 2SC5712(TE12L,F) maintains active product status, ensuring ongoing manufacturing support, consistent availability, and compliance with current regulatory standards.

Q: How do the DC current gain specifications differ between these transistors?

A: The 2SC2655-O,F(J specifies a minimum DC current gain (hFE) of 70 at 500mA collector current and 2V collector-emitter voltage. The 2SC5712(TE12L,F) specifies a minimum DC current gain of 400 at 300mA collector current and 2V collector-emitter voltage. The substitute device provides significantly higher current gain, which may reduce base drive requirements in switching applications.

Q: Are there compliance or certification differences between these components?

A: The 2SC5712(TE12L,F) is RoHS3 compliant, meeting current environmental and hazardous substance restrictions. The 2SC2655-O,F(J compliance status is not specified in the provided data. Both devices carry identical moisture sensitivity levels (MSL 1 - Unlimited) and ECCN classification (EAR99).

Q: What packaging considerations apply when selecting between these transistors?

A: The 2SC2655-O,F(J is supplied in through-hole TO-92MOD packaging, compatible with conventional PCB assembly and manual soldering. The 2SC5712(TE12L,F) is supplied in surface-mount PW-MINI packaging (TO-243AA), requiring surface-mount assembly equipment and reflow soldering processes. Packaging selection depends on manufacturing capabilities and PCB design requirements.