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2SC2458-Y-AP Equivalent & Substitute Parts
Part Overview
The 2SC2458-Y-AP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 150 mA, collector-emitter breakdown voltage of 50 V, and a transition frequency of 80 MHz. The transistor is housed in a TO-92S through-hole package with formed leads.
The 2SC2458-Y-AP is classified as obsolete. Locating equivalent substitute parts is necessary to maintain design continuity, ensure component availability for production, and support long-term product maintenance and repair operations.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Current - Collector (Ic) Max | 150 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 | V |
| Vce Saturation (Max) @ Ib, Ic | 250 mV @ 10 mA, 100 mA | — |
| Current - Collector Cutoff (Max) | 100 | nA |
| DC Current Gain (hFE) Min @ Ic, Vce | 120 @ 2 mA, 6 V | — |
| Power - Max | 200 | mW |
| Frequency - Transition | 80 | MHz |
| Operating Temperature Range | −55 to 150 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | TO-92-3 Short Body (Formed Leads) | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the 2SC2458-Y-AP is determined by electrical and mechanical compatibility across the following critical parameters:
Electrical Compatibility Criteria:
- Transistor type must be NPN
- Maximum collector current (Ic) must be equal to or greater than 150 mA
- Collector-emitter breakdown voltage (VCEO) must be equal to or greater than 50 V
- DC current gain (hFE) minimum specification must meet or exceed 120
- Collector cutoff current (ICBO) must not exceed 100 nA
- Operating temperature range must encompass the required application range
Mechanical Compatibility Criteria:
- Mounting type must be through-hole
- Package must be TO-92 series (TO-226-3 or equivalent)
- Lead configuration must be compatible with existing PCB layouts
Compliance Criteria:
- RoHS3 compliance required
- ECCN classification EAR99
The KSC945CYTA meets all electrical and mechanical substitution criteria for the 2SC2458-Y-AP.
Parameter Comparison
| Parameter | 2SC2458-Y-AP | KSC945CYTA | Unit |
|---|---|---|---|
| Manufacturer | Micro Commercial Co | onsemi | — |
| Product Status | Obsolete | Active | — |
| Transistor Type | NPN | NPN | — |
| Current - Collector (Ic) Max | 150 | 150 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 | 50 | V |
| Vce Saturation (Max) @ Ib, Ic | 250 mV @ 10 mA, 100 mA | 300 mV @ 10 mA, 100 mA | — |
| Current - Collector Cutoff (Max) | 100 | 100 | nA |
| DC Current Gain (hFE) Min @ Ic, Vce | 120 @ 2 mA, 6 V | 120 @ 1 mA, 6 V | — |
| Power - Max | 200 | 250 | mW |
| Frequency - Transition | 80 | 300 | MHz |
| Operating Temperature Range | −55 to 150 | Up to 150 | °C |
| Mounting Type | Through Hole | Through Hole | — |
| Package / Case | TO-92-3 Short Body (Formed Leads) | TO-92-3 (TO-226AA) Formed Leads | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| Moisture Sensitivity Level | 1 (Unlimited) | Not Applicable | — |
Engineering Selection Recommendations
The KSC945CYTA is a direct electrical and mechanical substitute for the 2SC2458-Y-AP. Both devices share identical maximum ratings for collector current (150 mA), collector-emitter breakdown voltage (50 V), and collector cutoff current (100 nA). Both meet the minimum DC current gain specification of 120 and are housed in compatible TO-92-3 through-hole packages with formed leads.
The KSC945CYTA offers performance advantages over the 2SC2458-Y-AP: higher maximum power dissipation (250 mW versus 200 mW), higher transition frequency (300 MHz versus 80 MHz), and active product status with established supply chain availability. The KSC945CYTA exhibits slightly higher saturation voltage (300 mV versus 250 mV at specified conditions), which remains acceptable for general-purpose switching applications.
Both devices are ROHS3 compliant and carry EAR99 ECCN classification. The KSC945CYTA is manufactured by onsemi, an established semiconductor supplier with consistent product availability and technical support infrastructure.
Frequently Asked Questions (FAQ)
Q: Can the KSC945CYTA directly replace the 2SC2458-Y-AP in existing designs?
A: Yes. The KSC945CYTA meets all electrical specifications required for direct substitution. Both devices are NPN transistors with identical maximum collector current (150 mA), collector-emitter breakdown voltage (50 V), and collector cutoff current (100 nA). Both are housed in compatible TO-92-3 through-hole packages with formed leads, permitting direct PCB mounting without layout modification.
Q: What are the key differences between these two transistors?
A: The primary differences are product status and performance characteristics. The 2SC2458-Y-AP is obsolete; the KSC945CYTA is active. The KSC945CYTA provides higher maximum power dissipation (250 mW versus 200 mW), higher transition frequency (300 MHz versus 80 MHz), and higher saturation voltage (300 mV versus 250 mV at specified test conditions). These differences do not prevent substitution in applications designed for the 2SC2458-Y-AP.
Q: Are there package compatibility concerns?
A: No. Both transistors use TO-92-3 through-hole packages with formed leads. The 2SC2458-Y-AP is specified as TO-92S (short body); the KSC945CYTA is specified as TO-92-3 (TO-226AA). Both package variants are mechanically compatible with standard TO-92 PCB footprints and do not require layout changes.
Q: Do both devices meet RoHS compliance requirements?
A: Yes. Both the 2SC2458-Y-AP and KSC945CYTA are ROHS3 compliant and carry EAR99 ECCN classification, meeting regulatory requirements for commercial and industrial applications.
Q: What is the significance of the higher transition frequency in the KSC945CYTA?
A: The KSC945CYTA transition frequency of 300 MHz exceeds the 2SC2458-Y-AP specification of 80 MHz. This higher frequency capability provides improved performance margin in high-frequency switching applications. For applications operating below 80 MHz, this difference is not functionally significant.
Q: How do the DC current gain specifications compare?
A: Both devices specify a minimum DC current gain (hFE) of 120. The 2SC2458-Y-AP specifies this gain at 2 mA collector current and 6 V collector-emitter voltage. The KSC945CYTA specifies the same gain at 1 mA collector current and 6 V collector-emitter voltage. This difference reflects different test conditions and does not affect substitution suitability.
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