2SC2412-S-TP Equivalent & Substitute Parts

Part Overview

The 2SC2412-S-TP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for interface applications in surface mount configurations. This active product operates at collector currents up to 150 mA with a maximum collector-emitter breakdown voltage of 50 V and a transition frequency of 150 MHz. The device is packaged in SOT-23 (TO-236-3) surface mount format with a maximum power dissipation of 200 mW.

Substitute parts become necessary when the primary part experiences supply constraints, extended lead times, or when design requirements allow for alternative components with equivalent or superior electrical characteristics within the same package family.

Substiute Parts

2SC2412-S-TP
Micro Commercial CoIn Stock: 8952SC2412-S-TP Datasheet
2SC2412-S-TP
Current Part
2DC2412R-7
Diodes IncorporatedIn Stock: 44962DC2412R-7 Datasheet
2DC2412R-7
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2SC2712-BL,LF
Toshiba Semiconductor and StorageIn Stock: 85002SC2712-BL,LF Datasheet
2SC2712-BL,LF
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2SC2712-GR,LF
Toshiba Semiconductor and StorageIn Stock: 121432SC2712-GR,LF Datasheet
2SC2712-GR,LF
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2SC2712-OTE85LF
Toshiba Semiconductor and StorageIn Stock: 244662SC2712-OTE85LF Datasheet
2SC2712-OTE85LF
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BC847A RFG
Taiwan Semiconductor CorporationIn Stock: 9923BC847A RFG Datasheet
BC847A RFG
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BC847B RFG
Taiwan Semiconductor CorporationIn Stock: 20791BC847B RFG Datasheet
BC847B RFG
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BC847C RFG
Taiwan Semiconductor CorporationIn Stock: 9921BC847C RFG Datasheet
BC847C RFG
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MMBT3904 RFG
Taiwan Semiconductor CorporationIn Stock: 12490MMBT3904 RFG Datasheet
MMBT3904 RFG
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MMBT3904L RFG
Taiwan Semiconductor CorporationIn Stock: 194577MMBT3904L RFG Datasheet
MMBT3904L RFG
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MMBT6428LT1G
onsemiIn Stock: 23363MMBT6428LT1G Datasheet
MMBT6428LT1G
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NSVMMBT6429LT1G
onsemiIn Stock: 17110NSVMMBT6429LT1G Datasheet
NSVMMBT6429LT1G
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NXP3875YR
Nexperia USA Inc.In Stock: 3857NXP3875YR Datasheet
NXP3875YR
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TBC847B,LM
Toshiba Semiconductor and StorageIn Stock: 116035TBC847B,LM Datasheet
TBC847B,LM
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 150 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 400 mV @ 5 mA, 50 mA
Current - Collector Cutoff (Max) 100 nA
DC Current Gain (hFE) Min @ Ic, Vce 120 @ 1 mA, 6 V
Power - Max 200 mW
Frequency - Transition 150 MHz
Operating Temperature Range -55 to 150 °C
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Substitute Part Grouping Explanation

Substitution of the 2SC2412-S-TP is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN (mandatory)
  • Voltage - Collector Emitter Breakdown (Max): 50 V or greater
  • Current - Collector (Ic) Max: 150 mA or greater
  • Mounting Type: Surface Mount (mandatory)
  • Package / Case: TO-236-3, SC-59, or SOT-23-3 (mandatory)

Secondary Compatibility Parameters:

  • Operating Temperature Range: Must encompass or exceed -55°C to 150°C
  • Vce Saturation characteristics at specified bias points
  • DC Current Gain (hFE) minimum specifications
  • Power dissipation capability

Parts are grouped into two categories:

Category A - Direct Equivalents: Parts meeting or exceeding all primary criteria with identical or superior electrical performance at the specified operating points.

Category B - Functional Alternatives: Parts with reduced maximum ratings (lower Ic, lower Vce breakdown, or lower power dissipation) that remain suitable for applications not requiring the full specification of the 2SC2412-S-TP.

Parameter Comparison

Part Number Manufacturer Ic Max (mA) Vce Breakdown (V) Power Max (mW) fT (MHz) hFE Min @ Ic, Vce Package Product Status
2SC2412-S-TP Micro Commercial Co 150 50 200 150 120 @ 1 mA, 6 V SOT-23 Active
2DC2412R-7 Diodes Incorporated 150 50 300 180 180 @ 1 mA, 6 V SOT-23-3 Active
2SC2712-BL,LF Toshiba Semiconductor and Storage 150 50 150 80 70 @ 2 mA, 6 V S-Mini Active
2SC2712-GR,LF Toshiba Semiconductor and Storage 150 50 150 80 70 @ 2 mA, 6 V S-Mini Active
2SC2712-OTE85LF Toshiba Semiconductor and Storage 150 50 150 80 70 @ 2 mA, 6 V TO-236 Active
BC847A RFG Taiwan Semiconductor Corporation 100 45 200 100 110 @ 2 mA, 5 V SOT-23 Active
BC847B RFG Taiwan Semiconductor Corporation 100 45 200 100 200 @ 2 mA, 5 V SOT-23 Active
BC847C RFG Taiwan Semiconductor Corporation 100 45 200 100 420 @ 2 mA, 5 V SOT-23 Active
MMBT3904 RFG Taiwan Semiconductor Corporation 200 40 300 250 100 @ 10 mA, 1 V SOT-23 Active
MMBT3904L RFG Taiwan Semiconductor Corporation 200 40 300 250 100 @ 10 mA, 1 V SOT-23 Obsolete
MMBT6428LT1G onsemi 200 50 225 700 250 @ 100 µA, 5 V SOT-23-3 Active

Engineering Selection Recommendations

Category A - Recommended Direct Substitutes (Active Status):

2DC2412R-7 (Diodes Incorporated): This part meets all primary substitution criteria with superior electrical performance. It provides identical maximum collector current (150 mA) and collector-emitter breakdown voltage (50 V) as the 2SC2412-S-TP. The 2DC2412R-7 offers increased power dissipation (300 mW versus 200 mW) and higher transition frequency (180 MHz versus 150 MHz), with higher DC current gain (180 versus 120 at 1 mA, 6 V). The part is RoHS3 compliant with MSL 1 rating and REACH unaffected status. Packaging is SOT-23-3 in cut tape and digi-reel format.

MMBT6428LT1G (onsemi): This part exceeds the 2SC2412-S-TP specifications across multiple parameters. It maintains the 50 V collector-emitter breakdown voltage and supports 200 mA collector current. The MMBT6428LT1G provides significantly higher transition frequency (700 MHz versus 150 MHz) and higher DC current gain (250 at 100 µA, 5 V). Power dissipation is 225 mW. The part is RoHS3 compliant with MSL 1 rating and REACH unaffected status. Packaging is SOT-23-3 (TO-236).

Category B - Functional Alternatives (Active Status, Reduced Ratings):

2SC2712-BL,LF, 2SC2712-GR,LF, 2SC2712-OTE85LF (Toshiba Semiconductor and Storage): These parts maintain the 50 V collector-emitter breakdown voltage and 150 mA maximum collector current. However, they provide reduced power dissipation (150 mW versus 200 mW) and lower transition frequency (80 MHz versus 150 MHz). DC current gain is lower (70 at 2 mA, 6 V versus 120 at 1 mA, 6 V). These parts are suitable for applications where the full performance envelope of the 2SC2412-S-TP is not required. All three variants are RoHS3 compliant with MSL 1 rating and REACH unaffected status. Packaging variants include S-Mini and TO-236 formats.

BC847A RFG, BC847B RFG, BC847C RFG (Taiwan Semiconductor Corporation): These parts have reduced maximum ratings compared to the 2SC2412-S-TP. Maximum collector current is 100 mA (versus 150 mA), and collector-emitter breakdown voltage is 45 V (versus 50 V). Power dissipation is 200 mW. Transition frequency is 100 MHz. DC current gain varies by variant (110, 200, and 420 respectively at 2 mA, 5 V). These parts are suitable only for applications with lower current and voltage requirements. All variants are RoHS3 compliant with MSL 1 rating and REACH unaffected status.

Not Recommended:

MMBT3904 RFG: While this part offers superior transition frequency (250 MHz) and higher collector current (200 mA), the maximum collector-emitter breakdown voltage is only 40 V, which is below the 50 V specification of the 2SC2412-S-TP. This part is not suitable for applications requiring the full 50 V rating.

MMBT3904L RFG: This part has identical electrical characteristics to MMBT3904 RFG but carries an Obsolete product status. Use of obsolete components is not recommended for new designs or long-term production applications.

Frequently Asked Questions (FAQ)

Q: Can the 2DC2412R-7 be used as a direct replacement for the 2SC2412-S-TP?

A: Yes. The 2DC2412R-7 meets all primary substitution criteria with identical maximum collector current (150 mA) and collector-emitter breakdown voltage (50 V). It provides superior power dissipation capability (300 mW versus 200 mW) and higher transition frequency (180 MHz versus 150 MHz). Both parts use SOT-23 surface mount packaging. The 2DC2412R-7 is active and RoHS3 compliant.

Q: What is the key difference between the 2SC2712 variants (BL,LF / GR,LF / OTE85LF)?

A: The three 2SC2712 variants have identical electrical specifications but differ in packaging format and supply method. The 2SC2712-BL,LF uses S-Mini packaging in tape and reel format. The 2SC2712-GR,LF uses S-Mini packaging in cut tape and digi-reel format. The 2SC2712-OTE85LF uses TO-236 packaging in tape and reel format. All three maintain 50 V breakdown voltage and 150 mA maximum collector current but provide reduced power dissipation (150 mW) and lower transition frequency (80 MHz) compared to the 2SC2412-S-TP.

Q: Why is the MMBT3904 RFG not recommended as a substitute?

A: The MMBT3904 RFG has a maximum collector-emitter breakdown voltage of only 40 V, which is below the 50 V specification of the 2SC2412-S-TP. Applications requiring the full 50 V rating cannot use this part. Additionally, the MMBT3904L RFG variant carries an Obsolete product status.

Q: Are the BC847 variants suitable replacements for the 2SC2412-S-TP?

A: The BC847A RFG, BC847B RFG, and BC847C RFG are not direct replacements. These parts have reduced maximum ratings: maximum collector current is 100 mA (versus 150 mA), and collector-emitter breakdown voltage is 45 V (versus 50 V). These parts are suitable only for applications with lower current and voltage requirements than the 2SC2412-S-TP.

Q: What does the MMBT6428LT1G offer compared to the 2SC2412-S-TP?

A: The MMBT6428LT1G maintains the 50 V collector-emitter breakdown voltage and supports 200 mA collector current (exceeding the 150 mA of the 2SC2412-S-TP). It provides significantly higher transition frequency (700 MHz versus 150 MHz) and higher DC current gain (250 at 100 µA, 5 V). Power dissipation is 225 mW. This part is suitable for high-frequency applications requiring superior performance.

Q: Are all substitute parts RoHS3 compliant?

A: All recommended substitute parts (2DC2412R-7, 2SC2712 variants, BC847 variants, MMBT3904 variants, and MMBT6428LT1G) are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level rating. The original 2SC2412-S-TP does not specify RoHS status but is REACH unaffected.

Q: Can I use the 2SC2712 parts in applications requiring 150 MHz or higher frequency operation?

A: No. The 2SC2712 variants have a transition frequency of only 80 MHz, which is significantly lower than the 2SC2412-S-TP (150 MHz). These parts are not suitable for applications requiring the full 150 MHz frequency specification.

Q: What is the difference between SOT-23 and SOT-23-3 packaging?

A: SOT-23 and SOT-23-3 are equivalent designations for the same three-lead surface mount package (also known as TO-236-3 or SC-59). Both refer to the same physical package format. The 2SC2412-S-TP uses SOT-23 packaging, and substitute parts using SOT-23-3 or TO-236 designations are mechanically compatible.

Q: Is the 2SC2412-S-TP still in active production?

A: Yes. The 2SC2412-S-TP is listed as an active product with 870 pieces in stock. However, substitute parts with higher inventory levels (such as the MMBT3904L RFG with 194,524 pieces or the 2SC2712-OTE85LF with 24,385 pieces) may offer better supply availability.

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