2SC2412-R-TP Equivalent & Substitute Parts

Part Overview

The 2SC2412-R-TP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for interface applications in surface mount configurations. This transistor operates at a maximum collector current of 150 mA, collector-emitter breakdown voltage of 50 V, and maximum power dissipation of 200 mW. The device is packaged in SOT-23 (TO-236-3) surface mount format with an active product status and unlimited moisture sensitivity level.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible mechanical packaging and thermal characteristics. Alternative models may be required due to component availability, supply chain considerations, or specific manufacturing certifications.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Collector Current (Max)	150	mA
Collector-Emitter Breakdown Voltage (Max)	50	V
Power Dissipation (Max)	200	mW
Transition Frequency	150	MHz
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following criteria:

Electrical Compatibility Requirements:

Transistor type must be NPN
Collector-emitter breakdown voltage must be greater than or equal to 50 V
Maximum collector current must be greater than or equal to 150 mA
Maximum power dissipation must be greater than or equal to 200 mW
Operating temperature range must encompass or exceed -55°C to 150°C

Mechanical Compatibility Requirements:

Mounting type must be surface mount
Package must be TO-236-3, SC-59, or SOT-23-3 compatible

Substitutes are grouped into two categories:

Category 1: Direct Electrical Equivalents — Parts meeting or exceeding all electrical parameters with identical or superior performance characteristics and active product status.

Category 2: Functional Alternatives — Parts with reduced electrical performance in specific parameters (lower collector current, lower power dissipation, or lower transition frequency) but maintaining minimum required voltage and current ratings. These are suitable for applications where the full performance envelope of the main part is not required.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	Power (Max) mW	Frequency MHz	Temp Range °C	Package	Status
2SC2412-R-TP	Micro Commercial Co	150	50	200	150	-55 to 150	SOT-23	Active
2PD601BRL,215	Nexperia USA Inc.	200	50	250	250	-40 to 150	TO-236AB	Active
2SC2712-BL,LF	Toshiba Semiconductor and Storage	150	50	150	80	-40 to 125	S-Mini	Active
2SC2712-GR,LF	Toshiba Semiconductor and Storage	150	50	150	80	-40 to 125	S-Mini	Active
2SC2712-OTE85LF	Toshiba Semiconductor and Storage	150	50	150	80	-40 to 125	TO-236	Active
BC847A RFG	Taiwan Semiconductor Corporation	100	45	200	100	-55 to 150	SOT-23	Active
BC847B RFG	Taiwan Semiconductor Corporation	100	45	200	100	-55 to 150	SOT-23	Active
BC847C RFG	Taiwan Semiconductor Corporation	100	45	200	100	-55 to 150	SOT-23	Active
MMBT3904 RFG	Taiwan Semiconductor Corporation	200	40	300	250	-55 to 150	SOT-23	Active
MMBT3904L RFG	Taiwan Semiconductor Corporation	200	40	300	250	-55 to 150	SOT-23	Obsolete
MMBT6428LT1G	onsemi	200	50	225	700	-55 to 150	SOT-23-3	Active

Engineering Selection Recommendations

Recommended Direct Substitutes (Active Status, Full Parameter Compliance):

MMBT6428LT1G — onsemi manufactured NPN transistor with 200 mA collector current, 50 V breakdown voltage, 225 mW power dissipation, and 700 MHz transition frequency. Operating temperature range -55°C to 150°C matches the main part specification. SOT-23-3 package is mechanically compatible. RoHS3 compliant with unlimited moisture sensitivity level. This part exceeds the electrical performance envelope of the 2SC2412-R-TP across all parameters.

2PD601BRL,215 — Nexperia USA Inc. manufactured NPN transistor with 200 mA collector current, 50 V breakdown voltage, and 250 mW power dissipation. Transition frequency of 250 MHz exceeds the main part specification. Operating temperature range -40°C to 150°C covers the primary operating window. TO-236AB package is mechanically compatible. AEC-Q101 automotive qualified with RoHS3 compliance and unlimited moisture sensitivity level.

2SC2712-OTE85LF — Toshiba Semiconductor and Storage manufactured NPN transistor with 150 mA collector current and 50 V breakdown voltage matching the main part exactly. Power dissipation of 150 mW is lower than the main part specification. Transition frequency of 80 MHz is reduced. Operating temperature range -40°C to 125°C does not extend to the full -55°C lower limit. TO-236 package is mechanically compatible. RoHS3 compliant with unlimited moisture sensitivity level. Suitable for applications not requiring the full thermal or frequency performance of the main part.

Not Recommended:

BC847A RFG, BC847B RFG, BC847C RFG — Taiwan Semiconductor Corporation manufactured transistors with maximum collector current of 100 mA and collector-emitter breakdown voltage of 45 V. These parameters fall below the minimum requirements of the 2SC2412-R-TP and do not provide adequate electrical performance for direct substitution.

MMBT3904L RFG — Obsolete product status. Although electrical parameters are acceptable, active product alternatives are available.

Frequently Asked Questions (FAQ)

Q: Can the BC847 series transistors substitute for the 2SC2412-R-TP?

A: No. The BC847A RFG, BC847B RFG, and BC847C RFG variants are rated for maximum collector current of 100 mA and collector-emitter breakdown voltage of 45 V. The 2SC2412-R-TP requires 150 mA collector current and 50 V breakdown voltage. These BC847 variants do not meet the minimum electrical requirements.

Q: What is the difference between the Toshiba 2SC2712 variants?

A: The 2SC2712-BL,LF, 2SC2712-GR,LF, and 2SC2712-OTE85LF are electrically identical with 150 mA collector current and 50 V breakdown voltage. The differences are in packaging format: 2SC2712-BL,LF uses S-Mini package in tape and reel format; 2SC2712-GR,LF uses S-Mini package in cut tape and Digi-Reel format; 2SC2712-OTE85LF uses TO-236 package in tape and reel format. All three are mechanically compatible with SOT-23 footprints.

Q: Is the MMBT6428LT1G a superior choice to the 2SC2412-R-TP?

A: The MMBT6428LT1G exceeds the 2SC2412-R-TP in collector current (200 mA versus 150 mA), power dissipation (225 mW versus 200 mW), and transition frequency (700 MHz versus 150 MHz). The collector-emitter breakdown voltage is identical at 50 V. Operating temperature range and package compatibility are equivalent. The MMBT6428LT1G provides enhanced performance headroom for applications requiring higher frequency response or current capacity.

Q: Does the 2PD601BRL,215 have automotive qualification?

A: Yes. The 2PD601BRL,215 is AEC-Q101 qualified and manufactured by Nexperia USA Inc. This qualification is relevant for automotive and industrial applications requiring specific reliability standards.

Q: What is the impact of the lower operating temperature range on the Toshiba 2SC2712 variants?

A: The Toshiba 2SC2712 variants specify an operating temperature range of -40°C to 125°C, compared to the 2SC2412-R-TP range of -55°C to 150°C. The 2SC2712 variants do not extend to the -55°C lower limit or the 150°C upper limit. Selection of these parts is appropriate only for applications operating within the -40°C to 125°C window.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 compliance status. The main part 2SC2412-R-TP does not specify RoHS status but is marked as REACH Unaffected, consistent with the substitute parts.

Q: What is the significance of the SOT-23 versus TO-236 package designation?

A: SOT-23 and TO-236 are equivalent package designations for the same physical form factor. Both refer to a three-lead surface mount package with identical pin spacing and footprint. Parts specified as SOT-23, TO-236-3, SC-59, or SOT-23-3 are mechanically interchangeable on the same printed circuit board layout.

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