2SC2383-R-AP Equivalent & Substitute Parts

Part Overview

The 2SC2383-R-AP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, rated for 160 V collector-emitter breakdown voltage and 1 A maximum collector current. This device is packaged in a TO-92MOD through-hole configuration and is designed for general-purpose switching and amplification applications with a maximum power dissipation of 900 mW.

The 2SC2383-R-AP is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for production, repair, and redesign applications where the original part is no longer readily procurable from the original manufacturer.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	160	V
Current - Collector (Ic) (Max)	1	A
Power - Max	900	mW
Mounting Type	Through Hole	—
Package / Case	TO-226-3, TO-92-3 Long Body (Formed Leads)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2SC2383-R-AP is determined by strict equivalence of the following electrical and mechanical parameters:

Critical Matching Parameters:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1 A
Power - Max: 900 mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
RoHS Status: ROHS3 Compliant

The substitute parts KSC2383OTA and KSC2383YTA, both manufactured by onsemi, meet all critical electrical and mechanical parameters. Both devices are active products with enhanced performance characteristics in frequency response and current gain, while maintaining full compatibility with the original part's voltage, current, and power ratings. Both substitute parts are packaged in TO-92-3 configuration and are RoHS3 compliant.

Parameter Comparison

Parameter	2SC2383-R-AP (Micro Commercial Co)	KSC2383OTA (onsemi)	KSC2383YTA (onsemi)
Transistor Type	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	160 V	160 V	160 V
Current - Collector (Ic) (Max)	1 A	1 A	1 A
Vce Saturation (Max) @ Ib, Ic	1 V @ 50mA, 500mA	1.5 V @ 50mA, 500mA	1.5 V @ 50mA, 500mA
Current - Collector Cutoff (Max)	10 µA	1 µA (ICBO)	1 µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 200mA, 5V	100 @ 200mA, 5V	160 @ 200mA, 5V
Power - Max	900 mW	900 mW	900 mW
Frequency - Transition	20 MHz	100 MHz	100 MHz
Operating Temperature (TJ)	-55°C ~ 150°C	150°C	150°C
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-226-3, TO-92-3 Long Body (Formed Leads)
Product Status	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

KSC2383OTA and KSC2383YTA Selection Basis:

Both KSC2383OTA and KSC2383YTA are active products manufactured by onsemi and represent direct functional equivalents to the obsolete 2SC2383-R-AP. Both substitute parts satisfy all critical electrical parameters: 160 V collector-emitter breakdown voltage, 1 A maximum collector current, and 900 mW maximum power dissipation. Both are packaged in TO-92-3 through-hole configuration and are ROHS3 compliant.

The substitute parts demonstrate improved performance characteristics compared to the original part. Both offer higher transition frequency (100 MHz versus 20 MHz) and lower collector cutoff current (1 µA versus 10 µA). The KSC2383YTA provides the highest DC current gain at 160 (minimum), while the KSC2383OTA provides 100 (minimum). Both substitute parts are available in active production status with substantial inventory levels.

Selection between KSC2383OTA and KSC2383YTA depends on circuit requirements for DC current gain. Applications requiring higher current gain benefit from KSC2383YTA. Applications with less stringent gain requirements are satisfied by KSC2383OTA. Both parts are suitable for direct substitution in circuits originally designed for 2SC2383-R-AP.

Frequently Asked Questions (FAQ)

Q: Can KSC2383OTA and KSC2383YTA be used interchangeably with 2SC2383-R-AP?

A: Yes. Both substitute parts meet all critical electrical and mechanical parameters: 160 V breakdown voltage, 1 A maximum collector current, 900 mW power dissipation, and TO-92-3 through-hole packaging. Both are ROHS3 compliant and suitable for direct substitution.

Q: What are the differences between KSC2383OTA and KSC2383YTA?

A: The primary difference is DC current gain (hFE). KSC2383YTA specifies a minimum hFE of 160 at 200 mA and 5 V, while KSC2383OTA specifies a minimum hFE of 100 at the same conditions. Both parts share identical voltage, current, and power ratings. KSC2383YTA is preferred for applications requiring higher current gain.

Q: Are there package compatibility concerns?

A: No. All three parts use TO-92-3 long body formed leads packaging. The substitute parts KSC2383OTA and KSC2383YTA are mechanically compatible with the original 2SC2383-R-AP in through-hole PCB applications.

Q: What is the significance of the improved transition frequency in the substitute parts?

A: The substitute parts specify 100 MHz transition frequency compared to 20 MHz for the original part. This indicates improved high-frequency performance capability. Applications operating at frequencies below 20 MHz are unaffected by this difference. Applications requiring higher frequency operation benefit from the enhanced bandwidth of the substitute parts.

Q: Are the substitute parts RoHS compliant?

A: Yes. Both KSC2383OTA and KSC2383YTA are ROHS3 compliant, matching the compliance status of the original 2SC2383-R-AP.

Q: Why is the 2SC2383-R-AP classified as obsolete?

A: The 2SC2383-R-AP is no longer manufactured by Micro Commercial Co. The onsemi equivalents KSC2383OTA and KSC2383YTA are active products with ongoing production and availability.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message