2SC22950BL Equivalent & Substitute Parts

Part Overview

The 2SC22950BL is an RF transistor manufactured by Panasonic Electronic Components, classified as an NPN bipolar junction transistor (BJT) designed for RF applications. This device operates at 20V collector-emitter breakdown voltage with a transition frequency of 250MHz and maximum power dissipation of 200mW in a Surface Mount Mini3-G1 package (TO-236-3/SC-59/SOT-23-3).

The 2SC22950BL is currently listed as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or repair requirements for systems utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	20	V
Frequency - Transition	250	MHz
Power - Max	200	mW
Current - Collector (Ic) (Max)	30	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 1mA, 10V	—
Noise Figure (dB Typ @ f)	2.8dB ~ 4dB @ 5MHz	dB
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2SC22950BL is determined by the following critical parameters:

Primary Substitution Criteria:

Transistor Type: NPN (mandatory match)
Voltage - Collector Emitter Breakdown (Max): Must equal or exceed 20V
Frequency - Transition: Must equal or exceed 250MHz
Power - Max: Must equal or exceed 200mW
Current - Collector (Ic) (Max): Must equal or exceed 30mA
Mounting Type: Surface Mount (mandatory match)
Operating Temperature: Must support 150°C (TJ)
Moisture Sensitivity Level: MSL 1 or equivalent

Secondary Compatibility Factors:

Package compatibility or functional equivalence in circuit application
DC Current Gain (hFE) characteristics within acceptable operating ranges
Noise Figure performance for RF applications

The substitute parts identified below meet the mandatory electrical and mechanical parameters required for functional equivalence to the 2SC22950BL in RF transistor applications.

Parameter Comparison

Parameter	2SC22950BL (Main)	BFS19,215	MAX2602ESA+T	NSVF6003SB6T1G	BFP620FH7764XTSA1	BFP840FESDH6327XTSA1
Manufacturer	Panasonic	Nexperia USA Inc.	Analog Devices Inc./Maxim Integrated	onsemi	Infineon Technologies	Infineon Technologies
Transistor Type	NPN	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	20V	20V	15V	12V	2.8V	2.6V
Frequency - Transition	250MHz	260MHz	1GHz	7GHz	65GHz	85GHz
Power - Max	200mW	250mW	6.4W	800mW	185mW	75mW
Current - Collector (Ic) (Max)	30mA	30mA	1.2A	150mA	80mA	35mA
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 1mA, 10V	65 @ 1mA, 10V	100 @ 250mA, 3V	100 @ 50mA, 5V	110 @ 50mA, 1.5V	150 @ 10mA, 1.8V
Operating Temperature (TJ)	150°C	150°C	150°C	-55°C ~ 150°C	150°C	150°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	8-SOIC (0.154", 3.90mm Width) Exposed Pad	SOT-23-6 Thin, TSOT-23-6	4-SMD, Flat Leads	4-SMD, Flat Leads
Product Status	Obsolete	Active	Active	Active	Active	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

BFS19,215 (Nexperia USA Inc.)

The BFS19,215 is the closest functional equivalent to the 2SC22950BL. Both devices share identical voltage (20V), current (30mA), and power (250mW) specifications. The BFS19,215 offers a transition frequency of 260MHz, which exceeds the 2SC22950BL requirement of 250MHz. Both devices utilize the same package format (TO-236-3/SC-59/SOT-23-3), enabling direct pin-compatible substitution. The BFS19,215 is currently in active production status with ROHS3 compliance and AEC-Q101 automotive qualification. This part is recommended as the primary substitute for direct replacement applications.

MAX2602ESA+T (Analog Devices Inc./Maxim Integrated)

The MAX2602ESA+T exceeds the 2SC22950BL in frequency capability (1GHz vs. 250MHz) and power dissipation (6.4W vs. 200mW). However, the collector-emitter breakdown voltage is reduced to 15V, which falls below the 20V specification. The package format differs (8-SOIC-EP vs. SOT-23-3), requiring circuit board layout modifications. This part is suitable for applications where higher frequency operation and power handling are required, provided the 15V voltage rating is acceptable. The device is in active production with ROHS3 compliance.

NSVF6003SB6T1G (onsemi)

The NSVF6003SB6T1G provides enhanced frequency performance (7GHz) and power capability (800mW) compared to the 2SC22950BL. The collector-emitter breakdown voltage is 12V, below the 20V requirement. The package format is SOT-23-6, which differs from the original SOT-23-3. This device includes AEC-Q101 automotive qualification and extended operating temperature range (-55°C to 150°C). Selection of this part requires verification that the reduced voltage rating and different package footprint are compatible with the target application.

BFP620FH7764XTSA1 (Infineon Technologies)

The BFP620FH7764XTSA1 is a high-frequency RF transistor with transition frequency of 65GHz and enhanced gain characteristics (21dB ~ 10dB). The collector-emitter breakdown voltage is 2.8V, significantly below the 20V specification. The package format is 4-TSFP (4-SMD, Flat Leads), requiring different PCB layout considerations. This part is intended for ultra-high-frequency applications and is not recommended for direct substitution in circuits designed for 20V operation.

BFP840FESDH6327XTSA1 (Infineon Technologies)

The BFP840FESDH6327XTSA1 operates at 85GHz transition frequency with 35dB gain. The collector-emitter breakdown voltage is 2.6V, substantially below the 20V requirement. The package format is PG-TSFP-4-1 (4-SMD, Flat Leads). This device is designed for millimeter-wave applications and is not suitable for direct substitution in circuits requiring 20V voltage ratings.

Frequently Asked Questions (FAQ)

Q: Can the BFS19,215 be used as a direct replacement for the 2SC22950BL?

A: Yes. The BFS19,215 is a pin-compatible substitute with identical voltage (20V), current (30mA), and power (250mW) ratings. Both devices use the TO-236-3/SC-59/SOT-23-3 package. The BFS19,215 offers slightly higher transition frequency (260MHz vs. 250MHz) and is currently in active production with ROHS3 compliance.

Q: Why do the Infineon parts (BFP620FH7764XTSA1 and BFP840FESDH6327XTSA1) have lower voltage ratings than the 2SC22950BL?

A: The Infineon BFP series transistors are optimized for ultra-high-frequency RF applications (65GHz and 85GHz respectively). These devices operate at lower voltage levels (2.8V and 2.6V) as a design trade-off to achieve higher frequency performance and improved noise characteristics. They are not suitable for circuits requiring 20V operation.

Q: What is the significance of the package format differences?

A: The 2SC22950BL uses a TO-236-3/SC-59/SOT-23-3 package with three leads. The MAX2602ESA+T uses an 8-SOIC-EP package, the NSVF6003SB6T1G uses SOT-23-6, and the Infineon parts use 4-TSFP or PG-TSFP-4-1 packages. Package differences require PCB layout modifications and may affect thermal management and signal integrity. Direct pin-for-pin substitution is only possible with the BFS19,215.

Q: Is the 2SC22950BL still available for purchase?

A: The 2SC22950BL is classified as obsolete. However, inventory of 1126 pieces is currently available from existing stock. For new designs or long-term production requirements, selection of an active-status substitute part is recommended to ensure continued supply chain availability.

Q: What does MSL 1 (Unlimited) mean for moisture sensitivity?

A: MSL 1 (Unlimited) indicates that the component has no moisture sensitivity limitations. The device can be stored and handled without special moisture control measures, and there are no time restrictions on shelf life or exposure to ambient humidity conditions.

Q: Can the MAX2602ESA+T be used in place of the 2SC22950BL despite the lower voltage rating?

A: The MAX2602ESA+T has a collector-emitter breakdown voltage of 15V, which is below the 2SC22950BL specification of 20V. Use of this part is only acceptable if the circuit design operates at voltages not exceeding 15V. The different package format (8-SOIC-EP vs. SOT-23-3) also requires PCB redesign. Verification of circuit voltage requirements is mandatory before substitution.

Q: What compliance certifications are important for substitute part selection?

A: All identified substitute parts are ROHS3 compliant and have MSL 1 ratings. The BFS19,215 and NSVF6003SB6T1G include AEC-Q101 automotive qualification, which may be required for automotive or safety-critical applications. Compliance requirements should be verified against the target application specifications.

Q: How do the noise figure specifications compare between the main part and substitutes?

A: The 2SC22950BL specifies 2.8dB ~ 4dB noise figure at 5MHz. The MAX2602ESA+T provides 3.3dB at 836MHz, the NSVF6003SB6T1G provides 3dB at 1GHz, and the Infineon parts provide superior noise performance (0.7dB ~ 1.3dB for BFP620 and 0.75dB for BFP840) at their respective higher frequency bands. Noise figure performance is frequency-dependent and should be evaluated within the specific operating frequency range of the target application.

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