2SB772-O-BP Equivalent & Substitute Parts

Part Overview

The 2SB772-O-BP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, rated for 30V collector-emitter breakdown voltage and 3A maximum collector current. This component is designed for through-hole mounting in the TO-126 package and operates across a temperature range of -55°C to 150°C. The part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. The 2SB772-O-BP delivers 1.25W maximum power dissipation with a transition frequency of 50MHz, suitable for general-purpose switching and amplification applications.

Substiute Parts

2SB772-O-BP

Micro Commercial CoIn Stock: 9962SB772-O-BP Datasheet

Current PartRFQ

KSB772YSTU

Fairchild SemiconductorIn Stock: 19295KSB772YSTU Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SB772-O-BP is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Transistor polarity: PNP type
• Maximum collector current: 3A minimum
• Collector-emitter breakdown voltage: 30V minimum
• Vce saturation characteristics: 500mV @ 200mA, 2A
• Collector cutoff current: 1µA maximum
• DC current gain (hFE): minimum 100 @ 1A, 2V

Mechanical Equivalence Criteria:

• Package type: TO-126-3 through-hole configuration
• Operating temperature range: -55°C to 150°C minimum

Compliance Criteria:

• RoHS3 compliance required
• Moisture sensitivity level: 1 (Unlimited)

The KSB772YSTU meets all specified electrical and mechanical parameters, with enhanced performance characteristics in transition frequency and current gain, while maintaining full compatibility with the original part's functional requirements.

Parameter Comparison

Engineering Selection Recommendations

2SB772-O-BP (Obsolete): The original part is classified as obsolete and carries ROHS3 compliance certification. Current inventory of 887 pieces is available; however, long-term sourcing is not guaranteed due to discontinued status.

KSB772YSTU (Active Substitute): The KSB772YSTU is manufactured by Fairchild Semiconductor and maintains active product status with significantly higher inventory availability (19,261 pieces). This part satisfies all critical electrical parameters required for direct substitution, including collector current, breakdown voltage, saturation characteristics, and cutoff current specifications. The substitute demonstrates superior DC current gain (160 vs. 100) and transition frequency (80MHz vs. 50MHz), providing enhanced performance margins in switching applications.

The KSB772YSTU exhibits lower maximum power dissipation (1W vs. 1.25W), which requires verification that thermal design margins remain adequate for the specific application. The substitute's upper operating temperature specification does not extend to -55°C minimum; applications requiring full -55°C to 150°C operation must confirm compatibility with the substitute's lower temperature limit.

Both parts maintain identical package configuration (TO-126-3), saturation voltage characteristics, and cutoff current specifications, ensuring direct pin-compatible replacement in through-hole PCB designs.

Frequently Asked Questions (FAQ)

Q: Can the KSB772YSTU directly replace the 2SB772-O-BP in existing designs?

A: The KSB772YSTU provides direct pin-compatible replacement in TO-126-3 through-hole applications. All critical electrical parameters—collector current (3A), breakdown voltage (30V), saturation voltage (500mV @ 200mA, 2A), and cutoff current (1µA)—are equivalent. Designs operating within 0°C to 150°C temperature range experience no functional impact. Applications requiring -55°C operation must confirm the substitute's lower temperature limit is acceptable.

Q: What is the significance of the higher DC current gain in the KSB772YSTU?

A: The KSB772YSTU specifies minimum DC current gain (hFE) of 160 @ 1A, 2V compared to 100 for the 2SB772-O-BP. Higher current gain reduces base drive requirements and improves switching efficiency. This represents an enhancement that does not compromise compatibility; circuits designed for the original part's 100 minimum gain operate within acceptable margins with the substitute's higher gain.

Q: Does the lower maximum power rating of the KSB772YSTU affect substitution suitability?

A: The KSB772YSTU specifies 1W maximum power dissipation versus 1.25W for the 2SB772-O-BP. Applications must confirm that actual power dissipation remains below 1W under worst-case operating conditions. Thermal design analysis is required to ensure the substitute's lower power rating does not create thermal stress in the specific application context.

Q: Are both parts RoHS3 compliant?

A: The 2SB772-O-BP carries explicit ROHS3 compliance certification. The KSB772YSTU does not specify RoHS status in the provided data. Applications with mandatory RoHS compliance requirements must obtain formal RoHS certification documentation from Fairchild Semiconductor before substitution.

Q: What is the difference in transition frequency between these parts?

A: The KSB772YSTU operates at 80MHz transition frequency compared to 50MHz for the 2SB772-O-BP. Higher transition frequency indicates faster switching capability and improved high-frequency performance. This enhancement does not create compatibility issues; circuits designed for 50MHz operation function correctly with the faster substitute.

Q: Are moisture sensitivity levels equivalent?

A: The 2SB772-O-BP specifies Moisture Sensitivity Level 1 (Unlimited), indicating no moisture-related handling restrictions. The KSB772YSTU does not specify MSL in the provided data. Standard through-hole component handling procedures apply to both parts.