2SB562-C-AP Equivalent & Substitute Parts

Part Overview

The 2SB562-C-AP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, designed for small-signal switching and amplification applications. This component operates at a maximum collector current of 1 A with a 20 V collector-emitter breakdown voltage and delivers 900 mW maximum power dissipation. The device features a through-hole TO-92 package configuration suitable for through-hole PCB assembly.

The 2SB562-C-AP is classified as obsolete. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure component availability for production, and support long-term product serviceability when original inventory becomes depleted.

Substiute Parts

2SB562-C-AP
Micro Commercial CoIn Stock: 10732SB562-C-AP Datasheet
2SB562-C-AP
Current Part
SS8550CTA
Fairchild SemiconductorIn Stock: 41321SS8550CTA Datasheet
SS8550CTA
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 20 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max) 1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 2V
Power - Max 900 mW
Frequency - Transition 350 MHz
Operating Temperature -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-92-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 2SB562-C-AP is determined by strict equivalence across the following critical parameters:

Transistor Type: Both the main part and substitute must be PNP bipolar junction transistors to maintain circuit polarity and biasing requirements.

Package Configuration: The TO-92-3 through-hole package is mandatory for mechanical and electrical compatibility with existing PCB layouts and assembly processes.

Electrical Ratings: Substitute parts must meet or exceed the following minimum specifications:

  • Collector current (Ic) rating of 1 A or greater
  • Collector-emitter breakdown voltage (Vce) of 20 V or greater
  • Maximum power dissipation of 900 mW or greater
  • DC current gain (hFE) minimum of 120 at specified operating conditions
  • Saturation voltage characteristics compatible with 500mV @ 80mA, 800mA

Compliance Requirements: Substitute parts must maintain ROHS3 compliance and MSL Level 1 rating to ensure regulatory and environmental compatibility.

The SS8550CTA meets all substitution criteria and is classified as an active product with enhanced electrical performance characteristics.

Parameter Comparison

Parameter 2SB562-C-AP SS8550CTA Compatibility
Transistor Type PNP PNP Equivalent
Current - Collector (Ic) (Max) 1 A 1.5 A Substitute exceeds requirement
Voltage - Collector Emitter Breakdown (Max) 20 V 25 V Substitute exceeds requirement
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA Equivalent
Current - Collector Cutoff (Max) 1 µA 100 nA Substitute exceeds requirement
DC Current Gain (hFE) (Min) 120 @ 500mA, 2V 120 @ 100mA, 1V Equivalent minimum; different test conditions
Power - Max 900 mW 1 W Substitute exceeds requirement
Frequency - Transition 350 MHz 200 MHz Main part exceeds substitute
Operating Temperature (Max) 150°C 150°C Equivalent
Mounting Type Through Hole Through Hole Equivalent
Package / Case TO-92-3 TO-92-3 Equivalent

Engineering Selection Recommendations

Product Status Consideration: The 2SB562-C-AP is classified as obsolete, while the SS8550CTA is an active product. The SS8550CTA is the designated substitute and offers superior availability and long-term supply assurance.

Electrical Performance: The SS8550CTA provides enhanced electrical specifications across multiple parameters. Maximum collector current is increased to 1.5 A, collector-emitter breakdown voltage is rated at 25 V, and maximum power dissipation is 1 W. These improvements provide additional design margin and thermal headroom compared to the original 2SB562-C-AP.

Saturation Characteristics: Both devices exhibit identical saturation voltage specifications at 500mV @ 80mA, 800mA, ensuring equivalent switching performance in saturation-mode applications.

Leakage Current: The SS8550CTA demonstrates superior leakage performance with a maximum collector cutoff current of 100 nA compared to 1 µA for the 2SB562-C-AP, resulting in lower standby power consumption.

Frequency Response: The 2SB562-C-AP operates at 350 MHz transition frequency, while the SS8550CTA is rated at 200 MHz. For applications requiring frequencies below 200 MHz, the SS8550CTA is fully compatible. Applications requiring operation above 200 MHz require evaluation of alternative substitutes.

Compliance and Certification: Both devices maintain ROHS3 compliance and MSL Level 1 rating, ensuring regulatory and environmental compatibility across manufacturing and deployment environments.

Frequently Asked Questions (FAQ)

Q: Can the SS8550CTA directly replace the 2SB562-C-AP in existing designs?

A: Yes, for applications operating below 200 MHz. The SS8550CTA is pin-compatible in the TO-92-3 package and meets or exceeds all electrical specifications of the 2SB562-C-AP. Applications requiring transition frequencies above 200 MHz require alternative component evaluation.

Q: What is the primary advantage of substituting the SS8550CTA for the obsolete 2SB562-C-AP?

A: The SS8550CTA is an active product with established supply chains and long-term availability. It provides enhanced electrical performance including higher collector current (1.5 A vs. 1 A), higher breakdown voltage (25 V vs. 20 V), increased power dissipation (1 W vs. 900 mW), and superior leakage characteristics (100 nA vs. 1 µA).

Q: Are there package compatibility concerns when substituting the SS8550CTA?

A: No. Both devices use the TO-92-3 through-hole package with identical lead configurations and spacing. Direct PCB substitution is mechanically and electrically compatible without layout modifications.

Q: How do the saturation voltage characteristics compare between these devices?

A: Both devices specify identical saturation voltage of 500mV @ 80mA, 800mA. Switching performance in saturation-mode applications is equivalent.

Q: What is the significance of the transition frequency difference?

A: The 2SB562-C-AP operates at 350 MHz while the SS8550CTA operates at 200 MHz. For applications with signal frequencies below 200 MHz, this difference is not limiting. Applications requiring operation above 200 MHz must evaluate alternative substitutes with higher transition frequency ratings.

Q: Do both devices maintain the same compliance certifications?

A: Yes. Both the 2SB562-C-AP and SS8550CTA are ROHS3 compliant with MSL Level 1 rating, ensuring equivalent regulatory and environmental compliance.

Q: What is the DC current gain specification for the SS8550CTA?

A: The SS8550CTA specifies a minimum DC current gain (hFE) of 120 @ 100mA, 1V. This meets the 2SB562-C-AP minimum requirement of 120 @ 500mA, 2V, though measured at different operating conditions.

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