2SB1710TL Equivalent & Substitute Parts

Part Overview

The 2SB1710TL is a PNP bipolar junction transistor manufactured by Rohm Semiconductor, designed for surface mount applications in the TSMT3 package. This component operates at 30 V collector-emitter breakdown voltage with a maximum collector current of 1 A and 500 mW power dissipation. The transistor features a transition frequency of 320 MHz and is suitable for general-purpose switching and amplification circuits requiring moderate current handling and frequency response.

The 2SB1710TL maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Substitute parts are identified based on electrical parameter compatibility and mechanical package interchangeability within the PNP transistor category.

Substiute Parts

2SB1710TL
Rohm SemiconductorIn Stock: 156082SB1710TL Datasheet
2SB1710TL
Current Part
2SB1695KT146
Rohm SemiconductorIn Stock: 2671902SB1695KT146 Datasheet
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2SB1695TL
Rohm SemiconductorIn Stock: 994032SB1695TL Datasheet
2SB1695TL
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BC858B-7-F
Diodes IncorporatedIn Stock: 1956BC858B-7-F Datasheet
BC858B-7-F
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BC858B-TP
Micro Commercial CoIn Stock: 6613BC858B-TP Datasheet
BC858B-TP
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BC858BLT3G
onsemiIn Stock: 39922BC858BLT3G Datasheet
BC858BLT3G
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BC858C-7-F
Diodes IncorporatedIn Stock: 453214BC858C-7-F Datasheet
BC858C-7-F
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BC858CLT3G
onsemiIn Stock: 65206BC858CLT3G Datasheet
BC858CLT3G
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BC859C,235
Nexperia USA Inc.In Stock: 11014BC859C,235 Datasheet
BC859C,235
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BC859CE6327HTSA1
Infineon TechnologiesIn Stock: 5745BC859CE6327HTSA1 Datasheet
BC859CE6327HTSA1
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BCW30,235
Nexperia USA Inc.In Stock: 11012BCW30,235 Datasheet
BCW30,235
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BCW61C,235
Nexperia USA Inc.In Stock: 10895BCW61C,235 Datasheet
BCW61C,235
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FMMT549
onsemiIn Stock: 5464FMMT549 Datasheet
FMMT549
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FMMT549TA
Diodes IncorporatedIn Stock: 5217FMMT549TA Datasheet
FMMT549TA
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FMMT589TA
Diodes IncorporatedIn Stock: 68423FMMT589TA Datasheet
FMMT589TA
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NSVBC858BLT1G
onsemiIn Stock: 68397NSVBC858BLT1G Datasheet
NSVBC858BLT1G
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NSVBC858CLT1G
onsemiIn Stock: 6543NSVBC858CLT1G Datasheet
NSVBC858CLT1G
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PBSS5130T,215
Nexperia USA Inc.In Stock: 9609PBSS5130T,215 Datasheet
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Key Parameters

Parameter Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 30 V
Current - Collector (Ic) (Max) 1 A
Power - Max 500 mW
Frequency - Transition 320 MHz
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA, 2V
Operating Temperature (TJ) 150 °C
Package / Case SC-96 (TSMT3)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the 2SB1710TL is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: PNP (required)
  • Voltage - Collector Emitter Breakdown (Max): 30 V or greater
  • Current - Collector (Ic) (Max): 1 A or greater
  • Power - Max: 500 mW or greater
  • Mounting Type: Surface Mount
  • RoHS3 Compliance: Required

Secondary Compatibility Factors:

  • Package / Case: SC-96 (TSMT3) preferred; SOT-23-3 and TO-236-3 packages acceptable for circuit-level compatibility
  • Frequency - Transition: 320 MHz or greater preferred for high-frequency applications
  • DC Current Gain (hFE): 270 or greater at specified test conditions
  • Operating Temperature: 150°C maximum junction temperature

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents (Higher Current Rating): Parts meeting or exceeding all primary criteria with collector current ratings of 1.5 A or greater. These parts provide enhanced current handling capability while maintaining voltage and power specifications.

Category B - Functional Equivalents (Lower Current Rating): Parts with collector current ratings below 1 A but meeting voltage, power, and frequency requirements. These parts are suitable for applications where the full 1 A current capability is not required.

Parameter Comparison

Part Number Manufacturer Ic (Max) Vce Breakdown (Max) Power (Max) Frequency (MHz) Package hFE (Min) Product Status
2SB1710TL Rohm Semiconductor 1 A 30 V 500 mW 320 SC-96 (TSMT3) 270 Active
2SB1695KT146 Rohm Semiconductor 1.5 A 30 V 200 mW 280 TO-236-3 / SC-59 / SOT-23-3 (SMT3) 270 Active
2SB1695TL Rohm Semiconductor 1.5 A 30 V 500 mW 280 SC-96 (TSMT3) 270 Active
BC858B-7-F Diodes Incorporated 100 mA 30 V 300 mW 200 TO-236-3 / SC-59 / SOT-23-3 220 Active
BC858B-TP Micro Commercial Co 100 mA 30 V 200 mW 200 TO-236-3 / SC-59 / SOT-23-3 220 Active
BC858BLT3G onsemi 100 mA 30 V 300 mW 100 TO-236-3 / SC-59 / SOT-23-3 (TO-236) 220 Active
BC858C-7-F Diodes Incorporated 100 mA 30 V 300 mW 200 TO-236-3 / SC-59 / SOT-23-3 420 Active
BC858CLT3G onsemi 100 mA 30 V 300 mW 100 TO-236-3 / SC-59 / SOT-23-3 (TO-236) 420 Active
BC859C,235 Nexperia USA Inc. 100 mA 30 V 250 mW 100 TO-236-3 / SC-59 / SOT-23-3 420 Active
BC859CE6327HTSA1 Infineon Technologies 100 mA 30 V 330 mW 250 TO-236-3 / SC-59 / SOT-23-3 420 Last Time Buy
BCW30,235 Nexperia USA Inc. 100 mA 32 V 250 mW 100 TO-236-3 / SC-59 / SOT-23-3 215 Active

Engineering Selection Recommendations

For Direct Replacement with Enhanced Current Capability:

The 2SB1695TL (Rohm Semiconductor) provides the closest electrical and mechanical match to the 2SB1710TL. Both components share identical SC-96 (TSMT3) package geometry, 30 V breakdown voltage, and 500 mW power rating. The 2SB1695TL offers increased collector current capacity (1.5 A versus 1 A), making it suitable for applications requiring higher current handling. Both parts maintain Active product status and full RoHS3 compliance. The transition frequency of 2SB1695TL (280 MHz) remains within acceptable range for most general-purpose switching applications, though 40 MHz lower than the 2SB1710TL.

The 2SB1695KT146 variant (Rohm Semiconductor) offers identical electrical specifications to 2SB1695TL but in SMT3 package format (TO-236-3 / SC-59 / SOT-23-3). This part is suitable when PCB layout accommodates smaller package geometry. Power dissipation is reduced to 200 mW, limiting use to lower-power applications.

For Functional Equivalence in Lower-Current Applications:

BC858C-7-F (Diodes Incorporated) and BC858CLT3G (onsemi) provide functional equivalence for circuits requiring collector currents below 1 A. Both maintain 30 V breakdown voltage and offer enhanced DC current gain (420 versus 270). BC858C-7-F operates at 200 MHz transition frequency with 300 mW power rating. BC858CLT3G operates at 100 MHz with identical power rating. Both parts are Active status with RoHS3 compliance.

BC859C,235 (Nexperia USA Inc.) provides automotive-grade qualification (AEC-Q101) with 30 V breakdown voltage and 100 mA collector current. This part is suitable for automotive applications requiring enhanced reliability certification. Power rating is 250 mW with 100 MHz transition frequency.

For Extended Voltage Margin:

BCW30,235 (Nexperia USA Inc.) offers 32 V breakdown voltage, providing 2 V margin above the 2SB1710TL specification. This part is suitable for applications with elevated supply voltage tolerance requirements. Automotive-grade qualification (AEC-Q101) is included. Collector current is limited to 100 mA.

Parts Requiring Caution:

BC859CE6327HTSA1 (Infineon Technologies) carries Last Time Buy status, indicating discontinued production. This part should not be selected for new designs or long-term production requirements.

Frequently Asked Questions (FAQ)

Q: Can the 2SB1695TL directly replace the 2SB1710TL in existing PCB layouts?

A: Yes. Both parts use identical SC-96 (TSMT3) package geometry and surface mount footprint. Electrical parameters are compatible for applications requiring up to 1.5 A collector current. The 2SB1695TL provides enhanced current capability without requiring PCB modifications.

Q: What is the primary difference between 2SB1695TL and 2SB1695KT146?

A: Both parts share identical electrical specifications (1.5 A, 30 V, 500 mW). The difference is package format: 2SB1695TL uses SC-96 (TSMT3), while 2SB1695KT146 uses SMT3 (TO-236-3 / SC-59 / SOT-23-3). The SMT3 package is physically smaller. Power dissipation for 2SB1695KT146 is reduced to 200 mW, limiting thermal performance.

Q: Are BC858 series parts suitable replacements for the 2SB1710TL?

A: BC858 series parts (BC858B-7-F, BC858B-TP, BC858BLT3G, BC858C-7-F, BC858CLT3G) are functional equivalents for applications where collector current does not exceed 100 mA. All maintain 30 V breakdown voltage and surface mount packaging. These parts are not suitable for applications requiring the full 1 A current capability of the 2SB1710TL. Package format differs (SOT-23-3 versus TSMT3).

Q: What does "Last Time Buy" status mean for BC859CE6327HTSA1?

A: Last Time Buy status indicates the manufacturer has discontinued production and will not accept new orders after a specified date. Existing inventory may be available but will eventually deplete. This part should not be selected for new designs or applications requiring long-term component availability.

Q: Can I use BCW30,235 as a substitute if my application only requires 100 mA collector current?

A: Yes. BCW30,235 provides 32 V breakdown voltage (exceeding the 2SB1710TL requirement), 100 mA collector current, and 250 mW power dissipation. This part is suitable for low-current applications. Automotive-grade qualification (AEC-Q101) is included. Package format is TO-236-3 / SC-59 / SOT-23-3 (smaller than TSMT3).

Q: How do I determine which substitute part is appropriate for my circuit?

A: Identify the maximum collector current required by your application. If current requirement is 1 A or greater, select 2SB1695TL (preferred for package compatibility) or 2SB1695KT146 (if smaller package is acceptable). If maximum current is below 1 A, BC858 or BC859 series parts are suitable. Verify that breakdown voltage requirement does not exceed 30 V (32 V for BCW30,235). Confirm power dissipation does not exceed the rated maximum for the selected part.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this document maintain RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1), matching the 2SB1710TL environmental specifications.

Q: What is the significance of DC Current Gain (hFE) differences between parts?

A: DC Current Gain (hFE) determines the base current required to achieve a specified collector current. The 2SB1710TL specifies minimum hFE of 270 at 100 mA, 2V. BC858 series parts specify 220 (lower gain), while BC858C and BC859 series specify 420 (higher gain). Higher hFE requires less base current for the same collector current. Lower hFE requires more base current. Circuit design must account for these differences in base drive requirements.

Q: Can I substitute a part with lower transition frequency?

A: Transition frequency determines maximum switching speed capability. The 2SB1710TL operates at 320 MHz. Substitute parts with lower transition frequency (280 MHz for 2SB1695 series, 200 MHz for BC858B series, 100 MHz for BC858C/BC859/BCW30 series) are suitable for applications where switching frequency does not approach the transistor's frequency limit. For high-frequency switching applications, verify that the substitute part's transition frequency exceeds the circuit operating frequency by adequate margin.

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