2SB1623AP Equivalent & Substitute Parts

Part Overview

The 2SB1623AP is a PNP Darlington bipolar junction transistor manufactured by Panasonic Electronic Components, rated for 80 V collector-emitter breakdown voltage and 4 A maximum collector current. This component is designed for Through Hole mounting in the TO-220-3 package configuration and delivers 2 W maximum power dissipation with a transition frequency of 20 MHz.

The 2SB1623AP is classified as an obsolete product. Identification of equivalent and substitute parts is necessary to support ongoing maintenance, repair, and redesign activities for legacy systems and applications currently utilizing this transistor.

Substiute Parts

2SB1623AP

Panasonic Electronic ComponentsIn Stock: 8672SB1623AP Datasheet

Current PartRFQ

MJF2955G

onsemiIn Stock: 1317MJF2955G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SB1623AP is evaluated based on the following critical parameters that define functional equivalence:

Polarity and Configuration: Both the main part and substitute must be PNP-type bipolar junction transistors with Through Hole mounting in compatible TO-220-3 package variants.

Voltage Rating: The substitute must meet or exceed the 80 V collector-emitter breakdown voltage specification to ensure safe operation within the original circuit design envelope.

Current Capacity: The substitute must support the 4 A maximum collector current requirement or higher to maintain circuit performance.

Power Dissipation: The substitute must support the 2 W maximum power rating.

Package Compatibility: Both components utilize TO-220-3 package configurations suitable for Through Hole assembly, ensuring mechanical and thermal interface compatibility.

The MJF2955G from onsemi satisfies these substitution criteria. This part is a PNP bipolar junction transistor with a 90 V collector-emitter breakdown voltage (exceeding the 80 V requirement), 10 A maximum collector current (exceeding the 4 A requirement), 2 W maximum power dissipation, and TO-220-3 package configuration compatible with Through Hole mounting.

Parameter Comparison

Engineering Selection Recommendations

The MJF2955G is suitable as a substitute for the 2SB1623AP based on the following engineering criteria:

Product Status: The MJF2955G is classified as an Active product with current manufacturing support and availability, whereas the 2SB1623AP is obsolete. Selection of an active substitute ensures long-term supply chain viability and technical support.

Compliance and Certifications: The MJF2955G is RoHS3 Compliant and REACH Unaffected, meeting current regulatory requirements for electronic components in industrial and commercial applications.

Electrical Performance: The MJF2955G exceeds the voltage and current specifications of the 2SB1623AP. The 90 V breakdown voltage provides a 10 V margin above the original 80 V specification, and the 10 A collector current rating provides a 6 A margin above the original 4 A specification. Both components support 2 W maximum power dissipation.

Package Compatibility: Both components utilize TO-220-3 package configurations with Through Hole mounting, ensuring mechanical and thermal interface compatibility with existing circuit board designs.

Operating Temperature Range: The MJF2955G supports an extended operating temperature range of -55°C to 150°C, encompassing the original part's 150°C maximum junction temperature specification.

Frequently Asked Questions (FAQ)

Q: Can the MJF2955G directly replace the 2SB1623AP in existing circuit designs?

A: The MJF2955G is electrically and mechanically compatible with the 2SB1623AP. Both components are PNP bipolar junction transistors in TO-220-3 packages with Through Hole mounting. The MJF2955G exceeds the voltage and current specifications of the original part. Circuit validation is required to confirm performance in specific applications, particularly regarding DC current gain differences and transition frequency characteristics.

Q: What are the key differences between the 2SB1623AP and MJF2955G?

A: The 2SB1623AP is a Darlington configuration with a DC current gain of 4000 at 3 A and 3 V, while the MJF2955G is a standard PNP transistor with a DC current gain of 20 at 4 A and 4 V. The 2SB1623AP operates at 20 MHz transition frequency, while the MJF2955G operates at 2 MHz. The MJF2955G provides higher collector current capacity (10 A versus 4 A) and higher breakdown voltage (90 V versus 80 V).

Q: Are there any package considerations when substituting these parts?

A: Both the 2SB1623AP and MJF2955G utilize TO-220-3 package configurations with Through Hole mounting. The physical dimensions and pin configurations are compatible, allowing direct mechanical substitution on existing printed circuit boards. Thermal management characteristics may differ due to manufacturing variations between manufacturers; thermal interface materials and heat sink designs should be evaluated for specific applications.

Q: What is the product status difference, and why does it matter?

A: The 2SB1623AP is classified as obsolete, indicating that Panasonic Electronic Components no longer manufactures this part. The MJF2955G is classified as active, meaning onsemi continues to manufacture and support this component. Selection of an active substitute ensures availability for future production runs, maintenance activities, and design revisions.

Q: How do the DC current gain specifications differ between these parts?

A: The 2SB1623AP specifies a minimum DC current gain (hFE) of 4000 at 3 A and 3 V, characteristic of Darlington configuration transistors. The MJF2955G specifies a minimum DC current gain of 20 at 4 A and 4 V, characteristic of standard PNP transistors. Applications requiring high current gain may require circuit design modifications when substituting the MJF2955G for the 2SB1623AP.

Q: What compliance certifications apply to the MJF2955G?

A: The MJF2955G is RoHS3 Compliant and REACH Unaffected. These certifications indicate compliance with current European Union regulations regarding hazardous substances and chemical safety in electronic components.