2SB1548AP Equivalent & Substitute Parts

Part Overview

The 2SB1548AP is a Panasonic Electronic Components PNP bipolar junction transistor (BJT) rated for 80 V collector-emitter breakdown voltage and 3 A maximum collector current. Housed in a TO-220-3 through-hole package, this device is designed for general-purpose switching and amplification applications requiring 2 W power dissipation capability. The 2SB1548AP is classified as obsolete, necessitating identification of functionally equivalent substitute components for ongoing design support and production continuity.

Substiute Parts

2SB1548AP
Panasonic Electronic ComponentsIn Stock: 9432SB1548AP Datasheet
2SB1548AP
Current Part
MJF2955G
onsemiIn Stock: 1317MJF2955G Datasheet
MJF2955G
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 80 V
Current - Collector (Ic) (Max) 3 A
Power - Max 2 W
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the 2SB1548AP is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Transistor polarity must remain PNP
  • Collector-emitter breakdown voltage must equal or exceed 80 V
  • Maximum collector current must equal or exceed 3 A
  • Maximum power dissipation must equal or exceed 2 W
  • Through-hole mounting configuration must be maintained
  • TO-220-3 package footprint must be compatible

Substitute Identification: The MJF2955G from onsemi satisfies all substitution criteria. This device exceeds the electrical ratings of the 2SB1548AP across all critical parameters while maintaining identical package geometry and mounting type. The MJF2955G is classified as active product status, ensuring long-term availability and supply chain continuity.

Parameter Comparison

Parameter 2SB1548AP (Panasonic) MJF2955G (onsemi) Unit
Transistor Type PNP PNP
Voltage - Collector Emitter Breakdown (Max) 80 90 V
Current - Collector (Ic) (Max) 3 10 A
Vce Saturation (Max) 1.2 @ 375mA, 3A 2.5 @ 3.3A, 10A V
Current - Collector Cutoff (Max) 300 1 µA
Power - Max 2 2 W
Frequency - Transition 30 2 MHz
Operating Temperature (Max) 150 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack
Product Status Obsolete Active

Engineering Selection Recommendations

Primary Substitute: MJF2955G

The MJF2955G is the qualified substitute for the 2SB1548AP based on the following factors:

Electrical Performance: The MJF2955G exceeds all critical electrical specifications of the 2SB1548AP. Collector-emitter breakdown voltage is rated at 90 V versus 80 V, and maximum collector current is rated at 10 A versus 3 A. Both devices share identical 2 W maximum power dissipation and TO-220-3 package geometry.

Product Status and Availability: The MJF2955G is classified as active product status, ensuring sustained manufacturing and supply chain availability. The 2SB1548AP is obsolete, making the MJF2955G the appropriate long-term replacement.

Compliance and Certifications: The MJF2955G is RoHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component procurement. Both devices carry EAR99 ECCN classification.

Inventory Status: The MJF2955G is available in production quantities (1254 pcs new original in stock), supporting immediate design implementation and production deployment.

Frequently Asked Questions (FAQ)

Q: Can the MJF2955G directly replace the 2SB1548AP in existing circuit designs?

A: Yes. The MJF2955G is a direct substitute for the 2SB1548AP. Both devices are PNP transistors in TO-220-3 packages with identical pin configurations and mounting footprints. The MJF2955G exceeds all electrical ratings of the 2SB1548AP, ensuring functional compatibility in applications designed for the original component.

Q: What are the key differences between the 2SB1548AP and MJF2955G?

A: The primary differences are product status and electrical performance headroom. The 2SB1548AP is obsolete; the MJF2955G is active. The MJF2955G provides higher collector current capacity (10 A versus 3 A) and higher breakdown voltage (90 V versus 80 V). The MJF2955G exhibits lower transition frequency (2 MHz versus 30 MHz) and lower collector cutoff current (1 µA versus 300 µA).

Q: Are there any package or mounting considerations when substituting the MJF2955G for the 2SB1548AP?

A: No. Both devices use identical TO-220-3 full pack configurations with through-hole mounting. PCB footprints, lead spacing, and thermal mounting interfaces are compatible without modification.

Q: Does the MJF2955G meet current regulatory compliance standards?

A: Yes. The MJF2955G is RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic component procurement and use.

Q: Why does the MJF2955G have lower transition frequency than the 2SB1548AP?

A: The MJF2955G is optimized for higher current and voltage performance (10 A, 90 V) compared to the 2SB1548AP (3 A, 80 V). This design trade-off results in lower transition frequency (2 MHz versus 30 MHz). For applications requiring the original 30 MHz transition frequency specification, circuit performance must be evaluated against the MJF2955G's 2 MHz capability.

Q: Is the MJF2955G available in the same packaging format as the 2SB1548AP?

A: Yes. The MJF2955G is supplied in TO-220-3 full pack configuration, identical to the 2SB1548AP. The supplier device package designation differs (TO-220FP versus TO-220D-A1), but both represent standard TO-220-3 through-hole packages with compatible mechanical and electrical interfaces.

Request Quote (Ships tomorrow)