2SB1495,Q(J Equivalent & Substitute Parts Reference Page

Part Overview

The 2SB1495,Q(J, manufactured by Toshiba Semiconductor and Storage, is a PNP Bipolar Junction Transistor (BJT) with a collector-emitter breakdown voltage of 100 V and a collector current rating of 3 A. The device is provided in a TO-220-3 Full Pack package for through-hole mounting. The maximum power dissipation is 2 W, and the product has a PNP configuration. This part is classified as obsolete, necessitating the identification of alternative models with matching key electrical and mechanical parameters to ensure ongoing support for designs and assemblies relying on this device.

Substiute Parts

2SB1495,Q(J
Toshiba Semiconductor and StorageIn Stock: 8262SB1495,Q(J Datasheet
2SB1495,Q(J
Current Part
TTB1020B,S4X(S
Toshiba Semiconductor and StorageIn Stock: 810TTB1020B,S4X(S Datasheet
TTB1020B,S4X(S
Similar

Key Parameters

Parameter Value
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 100 V
Current - Collector (Ic) (Max) 3 A
Power - Max 2 W
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Product Status Obsolete

Substitute Part Grouping Explanation

Substitute parts for the 2SB1495,Q(J must match the following key parameters: transistor polarity (PNP), collector-emitter breakdown voltage rating, collector current rating, maximum power dissipation, through-hole mounting, TO-220 style package, and compatibility with mechanical features. The substitute part must also meet component compliance and certifications where applicable.

Parameter Comparison

Manufacturer Part Number Manufacturer Transistor Type Package / Case Mounting Type Product Status Moisture Sensitivity Level (MSL) ECCN HTSUS
2SB1495,Q(J Toshiba Semiconductor and Storage PNP TO-220-3 Full Pack Through Hole Obsolete 1 (Unlimited) EAR99 8541.29.0095
TTB1020B,S4X(S Toshiba Semiconductor and Storage PNP TO220 Through Hole Active 1 (Unlimited) EAR99 8541.29.0095

Engineering Selection Recommendations

The 2SB1495,Q(J is obsolete; engineers should select active alternatives to ensure ongoing availability and support. The TTB1020B,S4X(S from Toshiba Semiconductor and Storage is designated as an active substitute and meets the packaging, mounting, classification, and compliance requirements provided. Both parts maintain a Moisture Sensitivity Level of 1 (Unlimited) and identical ECCN/HTSUS codes for regulatory compatibility.

Frequently Asked Questions (FAQ)

Q: What are the most critical parameters for substituting 2SB1495,Q(J in existing designs?
A: The most critical parameters are transistor type (PNP), collector-emitter voltage rating, collector current rating, power dissipation, mounting type, and package form factor.

Q: Can TTB1020B,S4X(S be used in place of 2SB1495,Q(J without changing PCB layout?
A: Both devices utilize a TO-220 style through-hole package, supporting straightforward mechanical compatibility in designs utilizing this footprint.

Q: Are there compliance considerations between the original and substitute part?
A: Both components are classified with an MSL of 1 (Unlimited) and identical ECCN and HTSUS codes for trade and handling. The substitute part is also RoHS compliant.

Q: Is TTB1020B,S4X(S suitable for direct replacement in terms of product status?
A: TTB1020B,S4X(S is listed as active, making it suitable for replacement requirements where ongoing supply is necessary.

Q: Should substitute selection consider packaging type for automated assembly?
A: Both the original and substitute parts are supplied in TO-220 style packages and support through-hole mounting; packaging compatibility should be verified with the specific production process requirements.

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