2SB1366F-O-BP Equivalent & Substitute Parts

Part Overview

The 2SB1366F-O-BP is a Bipolar (BJT) Transistor, PNP type, manufactured by Micro Commercial Co. This component is rated for 60 V collector-emitter breakdown voltage with a maximum collector current of 3 A and maximum power dissipation of 2 W. The device is packaged in a Through Hole TO-220-3 Full Pack configuration and operates across a temperature range of -55°C to 150°C.

The 2SB1366F-O-BP is classified as Obsolete. Locating equivalent substitute parts is necessary to maintain design continuity and ensure component availability for new production runs, repairs, and system upgrades where this transistor is specified.

Substiute Parts

2SB1366F-O-BP

Micro Commercial CoIn Stock: 10792SB1366F-O-BP Datasheet

Current PartRFQ

KSB1366GTU

onsemiIn Stock: 1218KSB1366GTU Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the 2SB1366F-O-BP are identified based on electrical and mechanical parameter equivalence. The following criteria determine substitution eligibility:

Critical Matching Parameters:

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3 A
• Voltage - Collector Emitter Breakdown (Max): 60 V
• Power - Max: 2 W
• Frequency - Transition: 9 MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• RoHS Status: ROHS3 Compliant

The KSB1366GTU manufactured by onsemi meets all critical electrical and mechanical parameters required for direct substitution. Both devices share identical ratings for collector current, breakdown voltage, power dissipation, transition frequency, and package configuration. The substitute part is classified as Active, ensuring ongoing availability and support.

Parameter Comparison

Engineering Selection Recommendations

The KSB1366GTU is a direct electrical and mechanical equivalent to the 2SB1366F-O-BP. Both devices are ROHS3 compliant and share identical electrical specifications for collector current, breakdown voltage, power dissipation, and transition frequency.

The primary advantage of selecting the KSB1366GTU is its Active product status. The 2SB1366F-O-BP is classified as Obsolete, which presents long-term supply chain risk. The onsemi KSB1366GTU provides equivalent performance with assured ongoing availability.

The DC Current Gain (hFE) of the KSB1366GTU is specified at a minimum of 150 @ 500mA, 5V, compared to 60 @ 500mA, 5V for the 2SB1366F-O-BP. This represents an improvement in current gain characteristics and does not introduce compatibility issues in applications designed for the original part.

Both devices are packaged in TO-220-3 Full Pack configuration suitable for Through Hole mounting. The operating temperature specification for the KSB1366GTU is listed as 150°C (TJ), which covers the upper range of the 2SB1366F-O-BP temperature specification of -55°C to 150°C.

Frequently Asked Questions (FAQ)

Q: Can the KSB1366GTU be used as a direct replacement for the 2SB1366F-O-BP?

A: Yes. The KSB1366GTU meets all critical electrical and mechanical parameters required for direct substitution. Both devices are PNP transistors with identical ratings for collector current (3 A), breakdown voltage (60 V), power dissipation (2 W), transition frequency (9 MHz), and package configuration (TO-220-3 Full Pack Through Hole).

Q: What is the difference in DC Current Gain between these parts?

A: The KSB1366GTU has a minimum DC Current Gain (hFE) of 150 @ 500mA, 5V, while the 2SB1366F-O-BP is specified at 60 @ 500mA, 5V. The higher gain of the substitute part does not create compatibility issues and may improve circuit performance in applications where current gain is a limiting factor.

Q: Are both parts RoHS compliant?

A: Yes. Both the 2SB1366F-O-BP and KSB1366GTU are ROHS3 compliant, meeting environmental and regulatory requirements for electronic components.

Q: What is the significance of the Obsolete status for the 2SB1366F-O-BP?

A: Obsolete status indicates that the 2SB1366F-O-BP is no longer in active production. This creates supply chain constraints for new designs and long-term support. The KSB1366GTU, classified as Active, ensures component availability for current and future applications.

Q: Are the package configurations identical?

A: Both devices use TO-220-3 Full Pack configuration for Through Hole mounting. The supplier device package designations differ slightly (TO-220F versus TO-220F-3), but both refer to the same physical package standard suitable for identical PCB layouts and thermal management approaches.

Q: What are the operating temperature ranges for each part?

A: The 2SB1366F-O-BP operates from -55°C to 150°C (TJ). The KSB1366GTU is specified at 150°C (TJ), covering the upper temperature range of the original part. For applications requiring the full -55°C to 150°C range, the KSB1366GTU specification covers the critical high-temperature operating point.