2SB1302S-TD-E Equivalent & Substitute Parts

Part Overview

The 2SB1302S-TD-E is a PNP bipolar junction transistor manufactured by onsemi, rated for 20V collector-emitter breakdown voltage and 5A maximum collector current. This surface mount device in TO-243AA package (PCP supplier package) is designed for general-purpose switching and amplification applications requiring 1.3W power dissipation capability.

The 2SB1302S-TD-E is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

2SB1302S-TD-E
onsemiIn Stock: 14962SB1302S-TD-E Datasheet
2SB1302S-TD-E
Current Part
2DB1386Q-13
Diodes IncorporatedIn Stock: 20492DB1386Q-13 Datasheet
2DB1386Q-13
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2DB1386R-13
Diodes IncorporatedIn Stock: 35902DB1386R-13 Datasheet
2DB1386R-13
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2SB1427T100E
Rohm SemiconductorIn Stock: 33822SB1427T100E Datasheet
2SB1427T100E
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PBSS302PX,115
Nexperia USA Inc.In Stock: 1284PBSS302PX,115 Datasheet
PBSS302PX,115
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ZXTP25020DZTA
Diodes IncorporatedIn Stock: 49467ZXTP25020DZTA Datasheet
ZXTP25020DZTA
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Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) Max 5 A
Voltage - Collector Emitter Breakdown (Max) 20 V
Vce Saturation (Max) 500mV @ 60mA, 3A
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) Min 100 @ 500mA, 2V
Power - Max 1.3 W
Frequency - Transition 320 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package / Case TO-243AA
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 2SB1302S-TD-E is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: PNP (mandatory match)
  • Voltage - Collector Emitter Breakdown: 20V minimum
  • Current - Collector (Ic) Max: 5A minimum
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA physical compatibility

Secondary Compatibility Factors:

  • Power dissipation capability (1.3W minimum)
  • Frequency - Transition: 320MHz or higher preferred for performance equivalence
  • DC Current Gain (hFE): 100 minimum at specified conditions
  • Operating Temperature: 150°C maximum junction temperature
  • RoHS3 Compliance and MSL Level 1 rating

Substitute parts must satisfy all primary criteria. Variations in secondary parameters are acceptable when the application does not require identical performance specifications. Parts with higher power ratings, transition frequencies, or current gain values provide enhanced capability and remain functionally compatible.

Parameter Comparison

Parameter 2SB1302S-TD-E 2DB1386Q-13 2DB1386R-13 2SB1427T100E PBSS302PX,115 ZXTP25020DZTA
Manufacturer onsemi Diodes Inc. Diodes Inc. Rohm Semi. Nexperia USA Diodes Inc.
Transistor Type PNP PNP PNP PNP PNP PNP
Ic (Max) [A] 5 5 5 2 5.1 5
Vce Breakdown (Max) [V] 20 20 20 20 20 20
Vce Saturation (Max) 500mV @ 60mA, 3A 1V @ 100mA, 4A 1V @ 100mA, 4A 500mV @ 50mA, 1A 230mV @ 255mA, 5.1A 265mV @ 500mA, 5A
Icbo (Max) 500nA 500nA 500nA 500nA 100nA 50nA
hFE (Min) 100 @ 500mA, 2V 120 @ 500mA, 2V 180 @ 500mA, 2V 390 @ 500mA, 6V 200 @ 2A, 2V 300 @ 10mA, 2V
Power (Max) [W] 1.3 1 1 2 2.1 2.4
Frequency - Transition [MHz] 320 100 100 90 130 290
Operating Temperature (TJ) [°C] 150 -55 to 150 -55 to 150 150 150 -55 to 150
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Product Status Obsolete Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL Rating 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

The 2DB1386Q-13 and 2DB1386R-13 from Diodes Incorporated provide direct electrical equivalence with 5A collector current and 20V breakdown voltage ratings. Both parts are in active production status, ensuring long-term supply availability. The 2DB1386R-13 includes AEC-Q101 automotive qualification, making it suitable for applications requiring automotive-grade components. These parts feature lower transition frequency (100MHz) compared to the original 2SB1302S-TD-E (320MHz), which is acceptable for general-purpose switching applications not requiring high-frequency performance.

The ZXTP25020DZTA from Diodes Incorporated offers superior performance characteristics with 290MHz transition frequency approaching the original specification, combined with enhanced power dissipation (2.4W) and lower collector cutoff current (50nA). This part is actively produced and provides extended operating temperature range (-55°C to 150°C).

The PBSS302PX,115 from Nexperia USA Inc. delivers 5.1A collector current capability with 2.1W power rating and 130MHz transition frequency. This part carries AEC-Q100 automotive qualification and is in active production.

Secondary Substitute (Limited Current Rating):

The 2SB1427T100E from Rohm Semiconductor is rated for 2A maximum collector current, which is below the 5A specification of the 2SB1302S-TD-E. This part is suitable only for applications where the actual operating current does not exceed 2A. The part offers enhanced power dissipation (2W) and is in active production status.

Compliance and Availability:

All substitute parts maintain ROHS3 compliance and MSL Level 1 rating, matching the environmental and handling requirements of the original component. All substitute parts are in active production status, providing superior supply chain continuity compared to the obsolete 2SB1302S-TD-E.

Frequently Asked Questions (FAQ)

Q: Can the 2DB1386Q-13 directly replace the 2SB1302S-TD-E in all applications?

A: The 2DB1386Q-13 meets the primary electrical specifications (5A, 20V, PNP, TO-243AA package). However, the transition frequency is 100MHz compared to 320MHz in the original part. Direct replacement is suitable for applications where switching speed is not a critical performance parameter. Applications requiring high-frequency operation should use the ZXTP25020DZTA instead.

Q: What is the significance of the automotive qualification (AEC-Q101, AEC-Q100) on substitute parts?

A: AEC-Q101 and AEC-Q100 qualifications indicate that parts have undergone automotive-grade reliability testing and are approved for automotive applications. These qualifications are not required for general industrial or consumer applications. Parts with automotive qualification can be used in non-automotive applications without restriction.

Q: Why does the 2SB1427T100E have a lower maximum collector current (2A) than the original part (5A)?

A: The 2SB1427T100E is a different device designed for lower current applications. This part is suitable only when the circuit design operates at or below 2A collector current. For applications requiring 5A capability, use 2DB1386Q-13, 2DB1386R-13, PBSS302PX,115, or ZXTP25020DZTA instead.

Q: Are all substitute parts available in the same physical package?

A: Yes. All substitute parts use the TO-243AA package, ensuring mechanical compatibility with the original 2SB1302S-TD-E. Supplier device packages vary (PCP, SOT-89-3, MPT3, SOT-89), but these are internal designations for the same physical TO-243AA form factor.

Q: What is the difference between Vce saturation specifications across substitute parts?

A: Vce saturation varies based on the test conditions (base current and collector current). Lower Vce saturation values indicate better saturation performance and lower power dissipation in the saturated state. The PBSS302PX,115 (230mV) and ZXTP25020DZTA (265mV) provide superior saturation characteristics compared to the original 2SB1302S-TD-E (500mV) and 2DB1386 series (1V).

Q: Can substitute parts with higher power ratings be used in place of the 2SB1302S-TD-E?

A: Yes. Parts with higher power ratings (2SB1427T100E at 2W, PBSS302PX,115 at 2.1W, ZXTP25020DZTA at 2.4W) provide enhanced thermal capability and can be used in applications where the original 1.3W rating is adequate. Higher power ratings do not create compatibility issues and may improve thermal performance in power-limited designs.

Q: What is the impact of different DC current gain (hFE) values on circuit performance?

A: Higher hFE values indicate greater current amplification. The original 2SB1302S-TD-E specifies 100 minimum hFE. Substitute parts with higher hFE (2DB1386R-13 at 180, PBSS302PX,115 at 200, ZXTP25020DZTA at 300) require less base current to achieve the same collector current, potentially improving circuit efficiency. Circuits designed for the original part will function correctly with higher hFE substitutes.

Q: Are there any moisture sensitivity or handling differences between the original and substitute parts?

A: No. All parts, including the original 2SB1302S-TD-E and all substitute parts, carry MSL Level 1 (Unlimited) rating, indicating no moisture sensitivity restrictions. Standard surface mount handling procedures apply uniformly across all parts.

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