2SB1216T-TL-H Equivalent & Substitute Parts

Part Overview

The 2SB1216T-TL-H is a PNP bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 4 A maximum collector current. This device is packaged in TO-252-3 (DPAK) surface mount configuration with a maximum power dissipation of 1 W and transition frequency of 130 MHz. The 2SB1216T-TL-H is classified as obsolete product status. Identification of equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for production and repair applications.

Substiute Parts

2SB1216T-TL-H
onsemiIn Stock: 7052SB1216T-TL-H Datasheet
2SB1216T-TL-H
Current Part
2SB1216T-TL-E
onsemiIn Stock: 93472SB1216T-TL-E Datasheet
2SB1216T-TL-E
Parametric Equivalent
MJD32C-13
Diodes IncorporatedIn Stock: 2852MJD32C-13 Datasheet
MJD32C-13
Similar
MJD32CQ-13
Diodes IncorporatedIn Stock: 30426MJD32CQ-13 Datasheet
MJD32CQ-13
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MJD32CT4
STMicroelectronicsIn Stock: 44913MJD32CT4 Datasheet
MJD32CT4
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MJD32CT4-A
STMicroelectronicsIn Stock: 16042MJD32CT4-A Datasheet
MJD32CT4-A
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Collector Current (Max) 4 A
Collector-Emitter Breakdown Voltage (Max) 100 V
Power Dissipation (Max) 1 W
Transition Frequency 130 MHz
Operating Temperature (Max) 150 °C
Package Type TO-252-3, DPAK
Mounting Type Surface Mount
Vce Saturation (Max) 500 mV @ 200 mA, 2 A
DC Current Gain (hFE Min) 200 @ 500 mA, 5 V

Substitute Part Grouping Explanation

Substitution of the 2SB1216T-TL-H is determined by the following critical parameters: transistor type (PNP), collector-emitter breakdown voltage (100 V), package configuration (TO-252-3 DPAK surface mount), and mounting compatibility.

The parametric equivalent 2SB1216T-TL-E from onsemi maintains identical electrical specifications and package type, differing only in product status (active versus obsolete) and compliance certifications. This part provides direct functional replacement with no design modifications required.

The similar manufacturer parts MJD32C-13, MJD32CQ-13, MJD32CT4, and MJD32CT4-A from Diodes Incorporated and STMicroelectronics share the same package configuration and voltage rating (100 V). However, these parts operate at reduced maximum collector current (3 A versus 4 A) and reduced power dissipation (15 W versus 1 W). The transition frequency specification differs significantly (3 MHz versus 130 MHz for MJD32 series; unspecified for MJD32CT4 variants). These parts are suitable for applications where the 3 A current rating and alternative electrical characteristics are compatible with circuit requirements.

Parameter Comparison

Parameter 2SB1216T-TL-H 2SB1216T-TL-E MJD32C-13 MJD32CQ-13 MJD32CT4 MJD32CT4-A
Manufacturer onsemi onsemi Diodes Inc. Diodes Inc. STMicroelectronics STMicroelectronics
Transistor Type PNP PNP PNP PNP PNP PNP
Ic (Max) 4 A 4 A 3 A 3 A 3 A 3 A
Vce Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 100 V
Power (Max) 1 W 1 W 15 W 15 W 15 W 15 W
Frequency - Transition 130 MHz 130 MHz 3 MHz 3 MHz
Operating Temperature (Max) 150°C 150°C 150°C 150°C 150°C 150°C
Package / Case TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Vce Saturation (Max) 500 mV @ 200 mA, 2 A 500 mV @ 200 mA, 2 A 1.2 V @ 375 mA, 3 A 1.2 V @ 375 mA, 3 A 1.2 V @ 375 mA, 3 A 1.2 V @ 375 mA, 3 A
DC Current Gain (hFE Min) 200 @ 500 mA, 5 V 200 @ 500 mA, 5 V 10 @ 3 A, 4 V 10 @ 3 A, 4 V 10 @ 3 A, 4 V 10 @ 3 A, 4 V
Product Status Obsolete Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Equivalent (Direct Replacement): The 2SB1216T-TL-E is the recommended equivalent for the obsolete 2SB1216T-TL-H. This part maintains identical electrical specifications, package configuration, and thermal characteristics. The 2SB1216T-TL-E carries active product status and ROHS3 compliance certification, providing long-term availability and regulatory alignment. No circuit modifications are required for this substitution.

Alternative Substitutes (Design Verification Required): The MJD32 series parts (MJD32C-13, MJD32CQ-13, MJD32CT4, MJD32CT4-A) are functionally compatible within the TO-252-3 DPAK package and share the 100 V voltage rating. However, these alternatives operate at 3 A maximum collector current compared to the 4 A rating of the 2SB1216T-TL-H. Applications operating at or near the 4 A specification require circuit analysis to confirm compatibility with the reduced current rating. The MJD32 series exhibits significantly lower transition frequency (3 MHz) and higher power dissipation capability (15 W), making these parts suitable for lower-frequency switching applications. All MJD32 variants carry active product status and ROHS3 compliance.

Frequently Asked Questions (FAQ)

Q: Can the 2SB1216T-TL-E directly replace the 2SB1216T-TL-H without circuit modifications?

A: Yes. The 2SB1216T-TL-E is a parametric equivalent with identical electrical specifications, package type, and thermal ratings. Direct substitution is supported without design changes.

Q: What are the key differences between the 2SB1216T-TL-H and the MJD32 series substitutes?

A: The primary differences are collector current rating (4 A for 2SB1216T-TL-H versus 3 A for MJD32 series), transition frequency (130 MHz versus 3 MHz), and power dissipation (1 W versus 15 W). The MJD32 series exhibits higher Vce saturation voltage (1.2 V versus 500 mV) and lower DC current gain (10 versus 200).

Q: Are all substitute parts available in the same package configuration?

A: Yes. All listed substitute parts use the TO-252-3 DPAK surface mount package with identical pinout and land pattern compatibility.

Q: Which substitute part should be selected for high-frequency switching applications?

A: The 2SB1216T-TL-E maintains the 130 MHz transition frequency specification of the original part. The MJD32 series operates at 3 MHz and is not suitable for high-frequency applications.

Q: What compliance certifications apply to the substitute parts?

A: The 2SB1216T-TL-E and all MJD32 series variants carry ROHS3 compliance certification and REACH Unaffected status. All parts are classified under ECCN EAR99.

Q: Can the MJD32CT4 or MJD32CT4-A be used in applications requiring the full 4 A collector current specification?

A: No. These parts are rated for 3 A maximum collector current. Applications requiring 4 A operation must use the 2SB1216T-TL-E or verify that circuit design accommodates the reduced current rating.

Q: What is the inventory status of available substitutes?

A: The 2SB1216T-TL-E has 9,300 pieces in stock. MJD32CQ-13 has 30,400 pieces, MJD32CT4 has 44,838 pieces, and MJD32CT4-A has 15,993 pieces available.

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