2SB1216T-TL-E Equivalent & Substitute Parts

Part Overview

The 2SB1216T-TL-E is an active PNP bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 4 A maximum collector current. This surface mount device is packaged in TO-252-3 (DPAK) configuration and is designed for general-purpose switching and amplification applications requiring 1 W power dissipation capability. The part is ROHS3 compliant and carries unlimited moisture sensitivity level classification. Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible package and mounting characteristics.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	100	V
Current - Collector (Ic) (Max)	4	A
Power - Max	1	W
Frequency - Transition	130	MHz
Operating Temperature (Max)	150	°C
Package / Case	TO-252-3, DPAK	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the 2SB1216T-TL-E are qualified based on the following criteria:

Electrical Compatibility Requirements:

Transistor type: PNP
Voltage - Collector Emitter Breakdown (Max): 100 V minimum
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant

Current Rating Consideration: The 2SB1216T-TL-E specifies 4 A maximum collector current. Substitute parts with lower maximum collector current ratings (3 A) remain functionally equivalent for applications not requiring the full 4 A specification, provided all other electrical and mechanical parameters align.

Power Dissipation: Substitute parts with higher power ratings (15 W versus 1 W) provide enhanced thermal capability and are acceptable for direct substitution in the same package footprint.

Frequency and Gain Parameters: Variations in transition frequency and DC current gain do not preclude substitution when the primary application requirements are met by the specified voltage and current ratings.

Parameter Comparison

Parameter	2SB1216T-TL-E (onsemi)	MJD32C-13 (Diodes Inc.)	MJD32CQ-13 (Diodes Inc.)	MJD32CT4-A (STMicroelectronics)
Transistor Type	PNP	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V	100 V
Current - Collector (Ic) (Max)	4 A	3 A	3 A	3 A
Power - Max	1 W	15 W	15 W	15 W
Frequency - Transition	130 MHz	3 MHz	3 MHz	—
Operating Temperature (Max)	150°C	150°C	150°C	150°C
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

All substitute parts listed maintain active product status and ROHS3 compliance, ensuring regulatory alignment with the original 2SB1216T-TL-E specification.

MJD32C-13 (Diodes Incorporated): This part is electrically and mechanically compatible with the 2SB1216T-TL-E. The 3 A maximum collector current rating is suitable for applications not requiring the full 4 A specification. The 15 W power rating provides superior thermal performance in the identical TO-252-3 package. Packaging is supplied as Tape & Reel (TR).

MJD32CQ-13 (Diodes Incorporated): This variant shares identical electrical specifications with MJD32C-13 and is supplied in Tape & Reel (TR) packaging. Higher inventory availability (30,400 pcs) may support production volume requirements.

MJD32CT4-A (STMicroelectronics): This part meets all electrical and mechanical compatibility criteria with the 2SB1216T-TL-E. Packaging is supplied as Cut Tape (CT) & Digi-Reel®. The 15 W power rating and identical TO-252-3 footprint ensure direct substitution capability.

Frequently Asked Questions (FAQ)

Q: Can MJD32C-13, MJD32CQ-13, or MJD32CT4-A be used as direct replacements for 2SB1216T-TL-E?

A: Yes. All three substitute parts share identical voltage ratings (100 V), the same TO-252-3 DPAK package footprint, surface mount configuration, and ROHS3 compliance. The 3 A maximum collector current rating of the substitutes is compatible with applications not requiring the full 4 A specification of the original part.

Q: What is the difference between MJD32C-13 and MJD32CQ-13?

A: Both parts are manufactured by Diodes Incorporated and carry identical electrical specifications. The primary difference is inventory availability, with MJD32CQ-13 stocked at higher quantities (30,400 pcs versus 2,750 pcs). Both are supplied in Tape & Reel packaging.

Q: How does the packaging differ among the substitute options?

A: MJD32C-13 and MJD32CQ-13 are supplied in Tape & Reel (TR) format. MJD32CT4-A is supplied as Cut Tape (CT) & Digi-Reel®. All three parts use the identical TO-252-3 DPAK package footprint and are compatible with standard surface mount assembly processes.

Q: Are there any performance differences in switching speed or frequency response?

A: The 2SB1216T-TL-E specifies 130 MHz transition frequency, while MJD32C-13 and MJD32CQ-13 specify 3 MHz. For applications requiring high-frequency switching performance, the original 2SB1216T-TL-E is the appropriate selection. For general-purpose switching applications, the lower transition frequency of the substitutes does not impact functionality.

Q: What is the significance of the higher power rating in the substitute parts?

A: The substitute parts are rated for 15 W power dissipation compared to 1 W for the 2SB1216T-TL-E, despite using the identical TO-252-3 package. This indicates improved thermal design or material composition in the substitute devices, providing enhanced thermal margin for the same physical footprint.

Q: Are all parts ROHS3 compliant?

A: Yes. The 2SB1216T-TL-E and all three substitute parts (MJD32C-13, MJD32CQ-13, MJD32CT4-A) are ROHS3 compliant and carry REACH Unaffected status.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message