2SB1216S-TL-E Equivalent & Substitute Parts

Part Overview

The 2SB1216S-TL-E is a PNP bipolar junction transistor manufactured by onsemi, rated for 100V collector-emitter breakdown voltage and 4A maximum collector current. This surface mount device in TO-252-3 (DPAK) packaging delivers 1W maximum power dissipation with 130MHz transition frequency. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating potential differences in performance characteristics.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	100	V
Current - Collector (Ic) (Max)	4	A
Power - Max	1	W
Frequency - Transition	130	MHz
Operating Temperature (TJ)	150	°C
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the 2SB1216S-TL-E is determined by the following critical parameters:

Primary Compatibility Criteria:

Transistor Type: PNP (mandatory match)
Voltage - Collector Emitter Breakdown (Max): 100V (minimum requirement)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 (physical compatibility)
Mounting Type: Surface Mount (assembly compatibility)

Secondary Consideration Parameters:

Current - Collector (Ic) (Max): 4A (original specification; substitutes rated at 3A represent reduced current capability)
Power - Max: 1W (original specification; substitutes rated at 15W provide increased thermal capability)
Frequency - Transition: 130MHz (original specification; substitutes at 3MHz represent reduced frequency performance)
DC Current Gain (hFE): Minimum 140 @ 500mA, 5V (original specification)

Substitute parts are grouped into two categories:

Category 1 - Direct Electrical Equivalents (Reduced Current Rating): Parts maintaining 100V breakdown voltage, PNP type, and identical package, but with reduced maximum collector current (3A instead of 4A) and modified saturation characteristics. These include 2SB1215S-TL-E from onsemi.

Category 2 - Functional Substitutes (Enhanced Power Rating): Parts maintaining 100V breakdown voltage, PNP type, and identical package, but with reduced maximum collector current (3A instead of 4A), significantly increased power dissipation (15W instead of 1W), and substantially reduced transition frequency (3MHz instead of 130MHz). These include MJD32C-13, MJD32CQ-13, MJD32CT4, and MJD32CT4-A.

Parameter Comparison

Parameter	2SB1216S-TL-E	2SB1215S-TL-E	MJD32C-13	MJD32CQ-13	MJD32CT4	MJD32CT4-A
Manufacturer	onsemi	onsemi	Diodes Incorporated	Diodes Incorporated	STMicroelectronics	STMicroelectronics
Transistor Type	PNP	PNP	PNP	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	100V	100V	100V	100V	100V	100V
Current - Collector (Ic) (Max)	4A	3A	3A	3A	3A	3A
Power - Max	1W	1W	15W	15W	15W	15W
Frequency - Transition	130MHz	130MHz	3MHz	3MHz	—	—
Operating Temperature (TJ)	150°C	150°C	-55°C ~ 150°C	-55°C ~ 150°C	150°C	150°C
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

2SB1215S-TL-E (onsemi)

This substitute maintains the closest electrical alignment with the 2SB1216S-TL-E. Both parts are manufactured by onsemi, share identical package specifications (TO-252-3, DPAK), and maintain the same 130MHz transition frequency and 1W power rating. The primary difference is reduced maximum collector current (3A versus 4A). This part is classified as Active product status, ensuring ongoing availability and supply chain stability. ROHS3 compliance and unlimited moisture sensitivity level (MSL 1) match the original specification. Selection of this part is appropriate for applications where the 3A current rating satisfies circuit requirements.

MJD32C-13 and MJD32CQ-13 (Diodes Incorporated)

These substitutes maintain 100V breakdown voltage and PNP type in identical TO-252-3 DPAK packaging. Both are Active products with ROHS3 compliance. Significant differences include reduced maximum collector current (3A), substantially increased power dissipation (15W), and reduced transition frequency (3MHz). Operating temperature range extends to -55°C, providing broader environmental capability. MJD32CQ-13 offers higher inventory availability (30,400 pieces) compared to MJD32C-13 (2,750 pieces). These parts are suitable for applications where lower frequency operation and enhanced thermal dissipation are acceptable trade-offs for increased power handling capability.

MJD32CT4 and MJD32CT4-A (STMicroelectronics)

These substitutes are manufactured by STMicroelectronics and maintain 100V breakdown voltage and PNP type in TO-252-3 DPAK packaging. Both are Active products with ROHS3 compliance. Specifications match the Diodes Incorporated MJD32 series with 3A maximum collector current, 15W power rating, and identical saturation characteristics. Transition frequency is not specified for these parts. MJD32CT4 offers significantly higher inventory (44,838 pieces) compared to MJD32CT4-A (15,993 pieces). These parts are suitable for applications where lower frequency operation and enhanced thermal dissipation are acceptable trade-offs.

Frequently Asked Questions (FAQ)

Q: Can the 2SB1215S-TL-E directly replace the 2SB1216S-TL-E in all applications?

A: The 2SB1215S-TL-E is suitable for replacement only in applications where the maximum collector current requirement does not exceed 3A. The 2SB1216S-TL-E is rated for 4A maximum collector current. If the circuit design requires the full 4A capability, the 2SB1215S-TL-E is not appropriate. Both parts share identical package, frequency response, and power rating specifications.

Q: What are the key differences between the onsemi 2SB1215S-TL-E and the Diodes Incorporated MJD32C-13?

A: Both parts maintain 100V breakdown voltage and PNP type in TO-252-3 DPAK packaging. The 2SB1215S-TL-E operates at 130MHz transition frequency with 1W power rating, while the MJD32C-13 operates at 3MHz with 15W power rating. The MJD32C-13 provides significantly enhanced thermal dissipation capability but reduced frequency performance. Maximum collector current is 3A for both parts.

Q: Are the MJD32CT4 and MJD32CT4-A interchangeable?

A: Yes, the MJD32CT4 and MJD32CT4-A are electrically equivalent. Both are manufactured by STMicroelectronics with identical electrical specifications. The primary difference is packaging format: MJD32CT4 is supplied in Cut Tape (CT) & Digi-Reel format, while MJD32CT4-A is also supplied in Cut Tape & Digi-Reel format. Inventory levels differ between the two part numbers.

Q: What is the impact of reduced transition frequency when substituting with MJD32 series parts?

A: The MJD32 series operates at 3MHz transition frequency compared to the 2SB1216S-TL-E at 130MHz. This reduced frequency performance is acceptable for low-frequency switching applications and audio-frequency circuits. Applications requiring high-frequency switching or RF performance should not use MJD32 series substitutes. The 2SB1215S-TL-E maintains the 130MHz specification and is preferred for frequency-sensitive applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed (2SB1215S-TL-E, MJD32C-13, MJD32CQ-13, MJD32CT4, and MJD32CT4-A) are ROHS3 compliant, matching the original 2SB1216S-TL-E specification. All parts maintain unlimited moisture sensitivity level (MSL 1).

Q: Why does the 2SB1216S-TL-E show as obsolete?

A: The 2SB1216S-TL-E is classified as obsolete by the manufacturer. The 2SB1215S-TL-E is the active successor from onsemi, offering nearly identical specifications with reduced maximum collector current (3A instead of 4A). For new designs or production continuity, the 2SB1215S-TL-E is the recommended onsemi alternative.

Q: Can MJD32 series parts be used in high-frequency applications?

A: No. The MJD32 series is rated for 3MHz transition frequency, making it unsuitable for high-frequency applications. The 2SB1216S-TL-E and 2SB1215S-TL-E both operate at 130MHz and are appropriate for higher-frequency switching circuits. Application frequency requirements must be evaluated before selecting between the onsemi and MJD32 series substitutes.

Q: What is the significance of the 15W power rating in MJD32 series parts?

A: The MJD32 series is rated for 15W maximum power dissipation compared to 1W for the 2SB1216S-TL-E and 2SB1215S-TL-E. This increased power rating indicates enhanced thermal capability and suitability for applications with higher power dissipation requirements. However, this increased rating comes with reduced frequency performance (3MHz versus 130MHz).

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