2SB1215T-TL-E Equivalent & Substitute Parts

Part Overview

The 2SB1215T-TL-E is a PNP bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 3 A maximum collector current. This device is packaged in a TO-252-3 DPAK surface mount configuration with a maximum power dissipation of 1 W and transition frequency of 130 MHz. The part is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	100	V
Current - Collector (Ic) (Max)	3	A
Power - Max	1	W
Frequency - Transition	130	MHz
Operating Temperature (TJ)	150	°C
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the 2SB1215T-TL-E is determined by the following critical parameters:

Primary Substitution Criteria:

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 100 V minimum
Current - Collector (Ic) (Max): 3 A or greater
Package / Case: TO-252-3 DPAK surface mount
Operating Temperature: 150°C (TJ) or higher

Acceptable Substitutes:

The 2SB1216T-TL-E meets all primary criteria with enhanced current rating (4 A) and maintains electrical compatibility. This part is active in production status and ROHS3 compliant.

The MJD32C-TP meets all primary criteria with identical current rating (3 A) and package configuration. This part is active in production status and ROHS3 compliant, though it exhibits lower transition frequency (3 MHz versus 130 MHz) and higher saturation voltage characteristics.

Parameter Comparison

Parameter	2SB1215T-TL-E	2SB1216T-TL-E	MJD32C-TP
Manufacturer	onsemi	onsemi	Micro Commercial Co
Product Status	Obsolete	Active	Active
Transistor Type	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V
Current - Collector (Ic) (Max)	3 A	4 A	3 A
Vce Saturation (Max)	500 mV @ 150 mA, 1.5 A	500 mV @ 200 mA, 2 A	1.2 V @ 375 mA, 3 A
Current - Collector Cutoff (Max)	1 µA (ICBO)	1 µA (ICBO)	50 µA
DC Current Gain (hFE) (Min)	200 @ 500 mA, 5 V	200 @ 500 mA, 5 V	10 @ 3 A, 4 V
Power - Max	1 W	1 W	1.25 W
Frequency - Transition	130 MHz	130 MHz	3 MHz
Operating Temperature (TJ)	150°C	150°C	150°C
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

2SB1216T-TL-E (Primary Substitute)

The 2SB1216T-TL-E is the preferred substitute for the obsolete 2SB1215T-TL-E. Both devices are manufactured by onsemi and share identical electrical characteristics in voltage rating, transition frequency, and DC current gain. The 2SB1216T-TL-E provides enhanced current capability (4 A versus 3 A), maintaining full backward compatibility while offering improved design margin. This part is active in production status and ROHS3 compliant, ensuring long-term availability and regulatory compliance.

MJD32C-TP (Alternative Substitute)

The MJD32C-TP is an alternative substitute manufactured by Micro Commercial Co. This device maintains the same voltage rating, current rating, and package configuration as the 2SB1215T-TL-E. The MJD32C-TP is active in production status and ROHS3 compliant. However, this part exhibits significantly lower transition frequency (3 MHz versus 130 MHz) and higher saturation voltage (1.2 V versus 500 mV), making it suitable only for applications where high-frequency performance is not required.

Frequently Asked Questions (FAQ)

Q: Can the 2SB1216T-TL-E directly replace the 2SB1215T-TL-E?

A: Yes. The 2SB1216T-TL-E is a direct substitute. Both parts share identical voltage ratings (100 V), transition frequency (130 MHz), DC current gain characteristics, and package configuration (TO-252-3 DPAK). The 2SB1216T-TL-E provides higher maximum collector current (4 A versus 3 A), which is compatible with designs rated for 3 A operation.

Q: What are the key differences between the 2SB1216T-TL-E and MJD32C-TP?

A: Both parts meet the voltage and current requirements of the 2SB1215T-TL-E and use identical packaging. The primary differences are transition frequency (130 MHz for 2SB1216T-TL-E versus 3 MHz for MJD32C-TP) and saturation voltage (500 mV versus 1.2 V). The 2SB1216T-TL-E is suitable for high-frequency applications, while the MJD32C-TP is limited to low-frequency switching applications.

Q: Are all substitute parts ROHS3 compliant?

A: The 2SB1216T-TL-E and MJD32C-TP are both ROHS3 compliant. The original 2SB1215T-TL-E RoHS status is not specified in the provided data.

Q: Do all parts share the same package configuration?

A: Yes. The 2SB1215T-TL-E, 2SB1216T-TL-E, and MJD32C-TP all use the TO-252-3 DPAK (2 Leads + Tab) surface mount package, enabling direct PCB layout compatibility.

Q: What is the moisture sensitivity level for these parts?

A: All three parts have a Moisture Sensitivity Level (MSL) of 1 (Unlimited), indicating no moisture sensitivity restrictions during storage and handling.

Q: Are there any REACH or export compliance differences?

A: All three parts have REACH Unaffected status and EAR99 ECCN classification, indicating no additional regulatory restrictions for these components.

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