2SB1202T-TL-E Equivalent & Substitute Parts

Part Overview

The 2SB1202T-TL-E is a Surface Mount PNP Bipolar Junction Transistor manufactured by onsemi, rated for 50V collector-emitter breakdown voltage and 3A maximum collector current. This component is classified as Obsolete, which necessitates identification of equivalent and substitute parts for ongoing design support and procurement continuity. The transistor is housed in a TO-252-3 DPAK package with TP-FA supplier device designation and operates at a maximum junction temperature of 150°C.

Substiute Parts

2SB1202T-TL-E

onsemiIn Stock: 132602SB1202T-TL-E Datasheet

Current PartRFQ

2SA2126-TL-E

onsemiIn Stock: 63592SA2126-TL-E Datasheet

DirectRFQ

2SA2126-TL-H

onsemiIn Stock: 21102SA2126-TL-H Datasheet

DirectRFQ

2SB1201T-TL-E

onsemiIn Stock: 47192SB1201T-TL-E Datasheet

SimilarRFQ

2SAR572DGTL

Rohm SemiconductorIn Stock: 52172SAR572DGTL Datasheet

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2SB906-Y(TE16L1,NQ

Toshiba Semiconductor and StorageIn Stock: 7662SB906-Y(TE16L1,NQ Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SB1202T-TL-E is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Transistor Type: PNP
• Collector Current (Ic) Max: 3A minimum
• Collector-Emitter Breakdown Voltage: 50V minimum
• DC Current Gain (hFE): 200 minimum @ specified conditions
• Package / Case: TO-252-3 DPAK surface mount
• Operating Temperature: 150°C maximum junction temperature

Substitute Categories:

Direct Substitutes meet all primary criteria with identical or superior electrical performance and active product status:

• 2SA2126-TL-E: Maintains 3A collector current and 50V breakdown voltage with enhanced frequency response (390MHz vs. 150MHz) and improved saturation characteristics (520mV vs. 700mV). Active product status provides long-term availability.

Similar Substitutes meet core electrical requirements but with parameter variations that require application-level assessment:

• 2SB1201T-TL-E: Reduces collector current rating to 2A and power dissipation to 800mW, maintaining 50V breakdown voltage and 150MHz transition frequency. Obsolete status limits future procurement.
• 2SAR572DGTL: Reduces breakdown voltage to 30V while increasing collector current to 5A and power dissipation to 10W. Different manufacturer (Rohm Semiconductor) and package designation (CPT3). Suitable only for applications with lower voltage requirements.
• 2SB906-Y(TE16L1,NQ: Increases breakdown voltage to 60V but reduces transition frequency to 9MHz and increases saturation voltage to 1.7V. Different manufacturer (Toshiba Semiconductor) and package designation (PW-MOLD). Suitable only for low-frequency applications.

Parameter Comparison

Engineering Selection Recommendations

Recommended Primary Substitute: 2SA2126-TL-E

The 2SA2126-TL-E is the optimal substitute for the obsolete 2SB1202T-TL-E. This part maintains electrical equivalence across all critical parameters: 3A collector current, 50V breakdown voltage, and 200 minimum DC current gain. The 2SA2126-TL-E carries Active product status, ensuring long-term availability and supply chain continuity. Both parts are onsemi manufactured, ROHS3 compliant, and housed in identical TO-252-3 DPAK packages. The 2SA2126-TL-E demonstrates superior performance characteristics with 390MHz transition frequency (versus 150MHz) and reduced saturation voltage (520mV versus 700mV), providing enhanced switching speed and lower power dissipation in saturation.

Alternative Substitute: 2SA2126-TL-H

The 2SA2126-TL-H provides electrical equivalence identical to the 2SA2126-TL-E but is packaged in Cut Tape & Digi-Reel format rather than Tape & Reel. This part carries Obsolete product status, limiting its suitability for new designs requiring long-term component availability.

Conditional Substitutes:

The 2SB1201T-TL-E is suitable only for applications where collector current requirements do not exceed 2A. This part maintains 50V breakdown voltage and 150MHz transition frequency but reduces maximum power dissipation to 800mW. Obsolete status restricts procurement viability.

The 2SAR572DGTL is suitable only for applications with maximum operating voltages of 30V or lower. This Rohm Semiconductor part increases collector current to 5A and power dissipation to 10W but uses a different supplier device package (CPT3). Active product status provides availability.

The 2SB906-Y(TE16L1,NQ is suitable only for low-frequency applications operating below 10MHz. This Toshiba Semiconductor part increases breakdown voltage to 60V but exhibits significantly higher saturation voltage (1.7V) and reduced DC current gain (100 minimum). Active product status provides availability.

Frequently Asked Questions (FAQ)

Q: Can the 2SA2126-TL-E directly replace the 2SB1202T-TL-E without circuit modifications?

A: Yes. The 2SA2126-TL-E maintains all critical electrical parameters: 3A collector current, 50V breakdown voltage, 200 minimum DC current gain, and identical TO-252-3 DPAK package. Both parts are PNP transistors with matching pin configurations and operating temperature ratings of 150°C.

Q: What is the primary advantage of using 2SA2126-TL-E over 2SB1202T-TL-E?

A: The 2SA2126-TL-E offers superior switching performance with 390MHz transition frequency compared to 150MHz, and reduced saturation voltage of 520mV versus 700mV. Additionally, the 2SA2126-TL-E carries Active product status, ensuring long-term supply availability.

Q: Why is 2SB1201T-TL-E listed as a similar substitute rather than a direct substitute?

A: The 2SB1201T-TL-E reduces maximum collector current from 3A to 2A and maximum power dissipation from 1W to 800mW. Applications requiring full 3A collector current cannot use this part. Additionally, it carries Obsolete product status.

Q: Can 2SAR572DGTL be used in place of 2SB1202T-TL-E?

A: The 2SAR572DGTL is suitable only for applications with maximum operating voltages of 30V or lower. The 2SB1202T-TL-E is rated for 50V breakdown voltage. Using 2SAR572DGTL in circuits designed for 50V operation will result in component failure. The 2SAR572DGTL is manufactured by Rohm Semiconductor and uses a different supplier device package (CPT3).

Q: What does Obsolete product status mean for the 2SB1202T-TL-E?

A: Obsolete status indicates the manufacturer has discontinued production. Existing inventory may be available from distributors, but long-term supply cannot be guaranteed. New designs should transition to Active status alternatives such as 2SA2126-TL-E.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 Compliant status, matching the compliance profile of the 2SB1202T-TL-E.

Q: What is the significance of the TP-FA and CPT3 package designations?

A: TP-FA and CPT3 are supplier device package designations that describe the physical form and lead configuration. The 2SB1202T-TL-E uses TP-FA designation, while 2SAR572DGTL uses CPT3. Both are housed in TO-252-3 DPAK packages with identical external dimensions and pin layouts, allowing direct PCB substitution.

Q: Why does 2SB906-Y(TE16L1,NQ have higher saturation voltage than other substitutes?

A: The 2SB906-Y(TE16L1,NQ is optimized for low-frequency applications (9MHz transition frequency) and exhibits different semiconductor characteristics. The 1.7V saturation voltage at 300mA, 3A is significantly higher than the 2SB1202T-TL-E specification of 700mV at 100mA, 2A, indicating different internal resistance and switching behavior. This part is suitable only for applications where saturation voltage is not a critical design parameter.

Q: What is the Moisture Sensitivity Level (MSL) rating and why is it important?

A: All listed parts carry MSL 1 (Unlimited) rating, indicating unlimited shelf life without moisture exposure controls. This matches the 2SB1202T-TL-E specification and ensures consistent handling and storage requirements across all substitute options.