Equivalent & Substitute Parts for 2SB1182TLR Bipolar (BJT) Transistor

Part Overview

The 2SB1182TLR, manufactured by Rohm Semiconductor, is a surface-mount PNP bipolar junction transistor (BJT) designed for applications requiring a maximum collector current of 2 A and a collector-emitter breakdown voltage of 32 V. The device is RoHS3 compliant and supplied in a TO-252-3/DPAK (CPT3) package. The part is currently designated as “Not For New Designs,” indicating limited future support or availability, which necessitates identification of alternative or substitute models with compatible electrical and mechanical parameters within the same product category.

Key Parameters

Parameter	Value
Transistor Type	PNP
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	32 V
Vce Saturation (Max) @ Ib, Ic	800mV @ 200mA, 2A
Current - Collector Cutoff (ICBO)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 500mA, 3V
Power - Max	10 W
Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package	CPT3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Substitute parts are selected strictly within the Transistors, Bipolar (BJT) category and must match the following key electrical and mechanical parameters: Transistor Type (PNP), maximum collector current (Ic), collector-emitter breakdown voltage (Vce), saturation voltage (Vce(sat)), DC current gain (hFE), maximum power dissipation, transition frequency, operating temperature, mounting type, and package compatibility. RoHS compliance and Moisture Sensitivity Level (MSL) are also considered to ensure alignment with regulated production standards.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max)	Vce Breakdown (Max)	Vce(sat) Max @ Ib, Ic	ICBO (Max)	DC Gain (hFE) Min	Power (Max)	Transition Freq	Operating Temp	Mounting Type	Package/Case	RoHS Status	MSL
2SB1182TLR	Rohm Semiconductor	PNP	2 A	32 V	800mV @ 200mA, 2A	100nA	180 @ 500mA, 3V	10 W	100MHz	150°C (TJ)	Surface Mount	TO-252-3, DPAK	ROHS3	1
2DB1182Q-13	Diodes Inc.	PNP	2 A	32 V	800mV @ 200mA, 2A	1µA	120 @ 500mA, 3V	10 W	110MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK	ROHS3	1
STD888T4	STMicroelectronics	PNP	5 A	30 V	1.2V @ 500mA, 10A	10µA	100 @ 500mA, 1V	15 W	-	150°C (TJ)	Surface Mount	TO-252-3, DPAK	ROHS3	1
ZXT790AKTC	Diodes Inc.	PNP	3 A	40 V	450mV @ 300mA, 3A	20nA	300 @ 10mA, 2V	3.9 W	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK	ROHS3	1

Engineering Selection Recommendations

Selection is guided by the product status, RoHS3 compliance, Moisture Sensitivity Level (MSL 1), and REACH status. Substitute parts listed are all ROHS3 compliant, MSL 1 rated, and REACH unaffected, meeting regulatory standards for production. The main part 2SB1182TLR is not for new designs; therefore, only active-status alternatives should be considered for new applications and ongoing supply assurance.

Frequently Asked Questions (FAQ)

Q1: What core parameters must match when selecting a substitute for a PNP bipolar transistor?
A1: Core parameters include transistor type, maximum collector current (Ic), collector-emitter breakdown voltage (Vce), saturation voltage (Vce(sat)), DC current gain (hFE), package/case, mounting type, and power dissipation.

Q2: Are the substitute parts package-compatible with the 2SB1182TLR?
A2: All substitutes use the TO-252-3, DPAK (2 Leads + Tab), SC-63 package and support surface mount applications.

Q3: Does compliance status affect substitution?
A3: All listed substitute parts are ROHS3 compliant, have unlimited moisture sensitivity level (MSL 1), and are REACH unaffected.

Q4: Why is the 2SB1182TLR not suitable for new designs?
A4: The product status “Not For New Designs” signifies restricted availability and manufacturer support, requiring use of active-status alternatives for new projects.

Q5: How do I confirm electrical compatibility between substitutes?
A5: Compatibility is confirmed by matching or exceeding the key parameters: transistor type, Ic (Max), Vce (Max), Vce(sat), DC gain (hFE), and power rating within the same mounting and package type.

Q6: Is transition frequency relevant for substitution?
A6: Transition frequency (ft) should match application bandwidth requirements and is included in the comparison where specified.

Q7: Are there differences in power capability and operating temperature among substitutes?
A7: Substitute parts offer similar or higher power dissipation and compatible operating temperature ranges as shown in the parameter comparison table.

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