2SB1140-S-TP Equivalent & Substitute Parts

Part Overview

The 2SB1140-S-TP is a Surface Mount PNP Bipolar Junction Transistor manufactured by Micro Commercial Co, rated for 50V collector-emitter breakdown voltage and 2A maximum collector current. This device is packaged in SOT-89 (TO-243AA) and is designed for general-purpose switching and amplification applications operating across -55°C to 150°C.

The 2SB1140-S-TP carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for legacy systems or redesign initiatives.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) Max	2	A
Voltage - Collector Emitter Breakdown (Max)	50	V
Power - Max	500	mW
Frequency - Transition	80	MHz
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-243AA	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution eligibility for the 2SB1140-S-TP is determined by the following critical parameters:

Primary Substitution Criteria:

Transistor Type: PNP (mandatory match)
Current - Collector (Ic) Max: 2 A (minimum requirement)
Voltage - Collector Emitter Breakdown: ≥50 V (equal or higher rating)
Mounting Type: Surface Mount (mandatory match)
Package / Case: TO-243AA (mandatory match)
RoHS Status: ROHS3 Compliant (mandatory match)

Secondary Compatibility Factors:

Power dissipation rating (500 mW minimum)
Frequency - Transition (80 MHz minimum)
Operating temperature range (-55°C to 150°C minimum coverage)
Moisture Sensitivity Level (MSL 1 or equivalent)

All substitute parts listed meet or exceed the primary substitution criteria. Variations in secondary parameters (such as higher power ratings, increased transition frequency, or improved saturation characteristics) indicate enhanced performance capability and do not preclude substitution.

Parameter Comparison

Parameter	2SB1140-S-TP	2SA1797T100Q	2SA2153-TD-E	2SB1123S-TD-E	2SB1123T-TD-E	2SB1561T100Q
Manufacturer	Micro Commercial Co	Rohm Semiconductor	onsemi	onsemi	onsemi	Rohm Semiconductor
Transistor Type	PNP	PNP	PNP	PNP	PNP	PNP
Current - Collector (Ic) Max	2 A	2 A	2 A	2 A	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	50 V	50 V	60 V
Vce Saturation (Max) @ Ib, Ic	300mV @ 50mA, 1A	350mV @ 50mA, 1A	400mV @ 50mA, 1A	700mV @ 50mA, 1A	700mV @ 50mA, 1A	350mV @ 50mA, 1A
Current - Collector Cutoff (Max)	1µA (ICBO)	100nA (ICBO)	1µA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	170 @ 200mA, 2V	120 @ 500mA, 2V	200 @ 100mA, 2V	100 @ 100mA, 2V	200 @ 100mA, 2V	120 @ 500mA, 2V
Power - Max	500 mW	2 W	3.5 W	500 mW	500 mW	2 W
Frequency - Transition	80 MHz	200 MHz	420 MHz	150 MHz	150 MHz	200 MHz
Operating Temperature (TJ)	-55 to 150°C	150°C	150°C	150°C	150°C	150°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-243AA	TO-243AA	TO-243AA	TO-243AA	TO-243AA
Supplier Device Package	SOT-89	MPT3	PCP	PCP	PCP	MPT3
Product Status	Obsolete	Not For New Designs	Active	Active	Active	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

For Active Production and New Designs:

The 2SA2153-TD-E (onsemi) and 2SB1123T-TD-E (onsemi) are the preferred substitutes for the obsolete 2SB1140-S-TP. Both devices carry Active product status, ensuring long-term availability and supply chain stability. Both are ROHS3 Compliant and MSL 1 rated.

The 2SA2153-TD-E provides enhanced performance with 420 MHz transition frequency and 3.5 W power dissipation, suitable for applications requiring higher-speed operation. The 2SB1123T-TD-E maintains electrical characteristics closer to the original 2SB1140-S-TP with 150 MHz transition frequency and 500 mW power rating, offering a more direct functional replacement.

For Legacy System Support:

The 2SB1123S-TD-E (onsemi) is an Active alternative with identical power and frequency specifications to the 2SB1140-S-TP, packaged in Tape & Reel format. This device is suitable for ongoing production of existing designs.

For Inventory Optimization:

The 2SA1797T100Q (Rohm Semiconductor) and 2SB1561T100Q (Rohm Semiconductor) carry Not For New Designs status but maintain substantial inventory availability (20,300 and 50,400 units respectively). These parts are suitable for sustaining production of legacy systems where design changes are not feasible.

All substitute parts meet the mandatory electrical and mechanical requirements of the 2SB1140-S-TP and maintain full RoHS3 compliance and MSL 1 moisture sensitivity rating.

Frequently Asked Questions (FAQ)

Q: Can the 2SA2153-TD-E directly replace the 2SB1140-S-TP in existing circuit designs?

A: Yes. The 2SA2153-TD-E meets all primary substitution criteria: PNP transistor type, 2 A collector current rating, 50 V breakdown voltage, TO-243AA package, Surface Mount configuration, ROHS3 compliance, and MSL 1 rating. The higher power dissipation (3.5 W vs. 500 mW) and transition frequency (420 MHz vs. 80 MHz) represent enhanced performance capability and do not preclude substitution.

Q: What is the difference between the 2SB1123S-TD-E and 2SB1123T-TD-E?

A: Both devices are manufactured by onsemi with identical electrical specifications: 2 A collector current, 50 V breakdown voltage, 150 MHz transition frequency, and 500 mW power rating. The primary difference is packaging format: 2SB1123S-TD-E is supplied in Tape & Reel (TR) format, while 2SB1123T-TD-E is supplied in Cut Tape (CT) & Digi-Reel® format. Both are Active products with ROHS3 compliance and MSL 1 rating.

Q: Why are 2SA1797T100Q and 2SB1561T100Q marked as "Not For New Designs"?

A: These parts carry Not For New Designs status, indicating that manufacturers recommend against their use in new circuit designs. However, they remain suitable for sustaining production of existing legacy systems where design modifications are not feasible. Both devices maintain full ROHS3 compliance and adequate inventory availability.

Q: Does the 2SB1561T100Q have a higher voltage rating than the 2SB1140-S-TP?

A: Yes. The 2SB1561T100Q is rated for 60 V collector-emitter breakdown voltage, compared to 50 V for the 2SB1140-S-TP. This higher voltage rating provides additional design margin and does not prevent substitution in applications designed for 50 V operation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (2SA1797T100Q, 2SA2153-TD-E, 2SB1123S-TD-E, 2SB1123T-TD-E, and 2SB1561T100Q) are ROHS3 Compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the compliance profile of the 2SB1140-S-TP.

Q: What is the significance of the different Vce saturation values among substitute parts?

A: Vce saturation represents the voltage drop across the transistor in saturation mode. The 2SB1140-S-TP specifies 300 mV saturation voltage, while substitutes range from 300 mV to 700 mV. Lower saturation voltage indicates lower power dissipation during switching. Substitutes with higher saturation values (such as 2SB1123S-TD-E and 2SB1123T-TD-E at 700 mV) remain functionally compatible but may require circuit-level evaluation if saturation voltage is a critical design parameter.

Q: Can I use the 2SA2153-TD-E in applications where the 2SB1140-S-TP was originally specified?

A: Yes. The 2SA2153-TD-E meets all mandatory substitution criteria and provides enhanced performance characteristics. The higher transition frequency (420 MHz vs. 80 MHz) and power dissipation (3.5 W vs. 500 mW) represent performance improvements that do not compromise backward compatibility. The device is Active status, ensuring long-term supply availability.

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